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Results: 26-33/33
Authors:
ISHIKURA K
TAKEUCHI A
KURIHARA M
MACHIDA H
HASEGAWA F
Citation: K. Ishikura et al., GROWTH CONDITION DEPENDENCE OF CARBON-REDUCTION IN GAAS CHEMICAL BEAMEPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM, JPN J A P 2, 33(4A), 1994, pp. 120000494-120000496
Authors:
KUMAGAI Y
ISHIMOTO K
MORI R
HASEGAWA F
Citation: Y. Kumagai et al., TEMPERATURE-DEPENDENCE OF BORON ADSORPTION DURING HBO2 IRRADIATION ONSI(111) SURFACE EVALUATED BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, JPN J A P 2, 33(1A), 1994, pp. 120000001-120000004
Authors:
AKAMATSU M
NARAHARA S
KOBAYASHI T
HASEGAWA F
Citation: M. Akamatsu et al., OPTICAL IN-SITU ANALYSIS OF GAAS ALAS/GAAS AND GAAS/(AL)GAAS/GAAS ATOMIC LAYER GROWTH USING GACL(3), ALCL(3) AND ASH(3)/, Applied surface science, 82-3, 1994, pp. 228-232
Authors:
SATO K
HASEGAWA F
HIROTA I
Citation: K. Sato et al., SHORT-PERIOD DISTURBANCES IN THE EQUATORIAL LOWER STRATOSPHERE, Journal of the Meteorological Society of Japan, 72(6), 1994, pp. 859-872
Authors:
ISHIKURA K
TAKEUCHI A
KURIHARA M
NAKAGAWA M
HASEGAWA F
Citation: K. Ishikura et al., CARBON GETTERING MECHANISM OF GAAS CHEMICAL BEAM EPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM, Journal of crystal growth, 145(1-4), 1994, pp. 687-691
Authors:
KUMAGAI Y
HASEGAWA F
PARK K
Citation: Y. Kumagai et al., PLANAR TO COLUMNAR TRANSFORMATION OF PTSI IN THE EPITAXIAL-GROWTH PROCESS OF SI PTSI/SI(111) DOUBLE HETEROSTRUCTURES/, Journal of applied physics, 75(6), 1994, pp. 3211-3213
Authors:
TAKANO K
IWAI S
HASEGAWA F
Citation: K. Takano et al., DEVELOPMENT OF PERSONAL-COMPUTER AIDED AN ALYSIS AND EVALUATION SUPPORT SYSTEM FOR HUMAN RELATED INCIDENTS IN NUCLEAR-POWER-PLANTS, Nippon Genshiryoku Gakkaishi, 36(11), 1994, pp. 1059-1067
Authors:
ISHIKURA K
HAYASHI K
OGAWA T
HASEGAWA F
Citation: K. Ishikura et al., LOW-CARBON INCORPORATION IN METALORGANIC MOLECULAR-BEAM EPITAXY OF GAAS USING DIMETHYLAMINE GALLANE, JPN J A P 2, 32(7B), 1993, pp. 120001014-120001016