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Results: 19
Authors:
HATZAKIS M
GOGOLIDES E
Citation: M. Hatzakis et E. Gogolides, PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON MICROFABRICATION AND NANOFABRICATION, SEPTEMBER 15-18, 1997, ATHENS, GREECE - PREFACE, Microelectronic engineering, 42, 1998, pp. 7-8
Authors:
TEGOU E
GOGOLIDES E
ARGITIS P
BOUDOUVIS A
HATZAKIS M
Citation: E. Tegou et al., SILYLATION OF EPOXY FUNCTIONALIZED PHOTORESISTS FOR OPTICAL, E-BEAM LITHOGRAPHY AND MICROMACHINING APPLICATIONS, Microelectronic engineering, 42, 1998, pp. 335-338
Authors:
ARGITIS P
VASILOPOULOU MA
GOGOLIDES E
TEGOU E
HATZAKIS M
KOLLIA Z
CEFALAS AC
Citation: P. Argitis et al., ETCH RESISTANCE ENHANCEMENT AND ABSORBENCY OPTIMIZATION WITH POLYAROMATIC COMPOUNDS FOR THE DESIGN OF 193 NM PHOTORESISTS, Microelectronic engineering, 42, 1998, pp. 355-358
Authors:
TEGOU E
GOGOLIDES E
HATZAKIS M
Citation: E. Tegou et al., THERMAL-ANALYSIS OF PHOTORESISTS IN AID OF LITHOGRAPHIC PROCESS-DEVELOPMENT, Microelectronic engineering, 35(1-4), 1997, pp. 141-144
Authors:
PATSIS G
RAPTIS I
GLEZOS N
ARGITIS P
HATZAKIS M
AIDINIS CJ
GENTILI M
MAGGIORA R
Citation: G. Patsis et al., GEL FORMATION THEORY APPROACH FOR THE MODELING OF NEGATIVE CHEMICALLYAMPLIFIED E-BEAM RESISTS, Microelectronic engineering, 35(1-4), 1997, pp. 157-160
Authors:
EVERETT JP
SCHMIDT DL
ROSE GD
ARGRITIS P
AIDINIS CJ
HATZAKIS M
Citation: Jp. Everett et al., SYNTHESIS OF SOME ONIUM SALTS AND THEIR COMPARISON AS CATIONIC PHOTOINITIATORS IN AN EPOXY RESIST, Polymer, 38(7), 1997, pp. 1719-1723
Authors:
GOGOLIDES E
TZEVELEKIS D
GRIGOROPOULOS S
TEGOU E
HATZAKIS M
Citation: E. Gogolides et al., WET SILYLATION AND OXYGEN PLASMA DEVELOPMENT OF PHOTORESISTS - A MATURE AND VERSATILE LITHOGRAPHIC PROCESS FOR MICROELECTRONICS AND MICROFABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3332-3338
Authors:
GOGOLIDES E
TEGOU E
BELTSIOS K
PAPADOKOSTAKI K
HATZAKIS M
Citation: E. Gogolides et al., THERMAL AND MECHANICAL ANALYSIS OF PHOTORESIST AND SILYLATED PHOTORESIST FILMS - APPLICATION TO AZ 5214(TM), Microelectronic engineering, 30(1-4), 1996, pp. 267-270
Authors:
ARGITIS P
RAPTIS I
AIDINIS CJ
GLEZOS N
BACIOCCHI M
EVERETT J
HATZAKIS M
Citation: P. Argitis et al., ADVANCED EPOXY NOVOLAC RESIST FOR FAST HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 3030-3034
Authors:
GOGOLIDES E
TZEVELEKIS D
YAMMAKOPOULOU K
HATZAKIS M
Citation: E. Gogolides et al., A NEW METHOD WITH INCREASES THE SI CONTENT IN WET SILYLATION, AND ITSRELATION TO THE THERMAL EFFECTS DURING O(2) PLASMA DEVELOPMENT, Microelectronic engineering, 27(1-4), 1995, pp. 381-384
Authors:
GLEZOS N
RAPTIS I
HATZAKIS M
Citation: N. Glezos et al., LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR, Microelectronic engineering, 26(3-4), 1995, pp. 131-140
Authors:
EVERETT J
PIECHOCKI C
ARGITIS P
HATZAKIS M
Citation: J. Everett et al., SURFACTANT-MODIFIED EPOXY-RESINS AS NOVEL NEGATIVE-ACTING DEEP UV PHOTORESISTS, Journal of applied polymer science, 58(1), 1995, pp. 179-183
Authors:
GOGOLIDES E
TZEVELEKIS D
TSOI E
HATZAKIS M
GOETHALS AM
BAIK KH
VANROEY F
Citation: E. Gogolides et al., QUARTER-MICRON LITHOGRAPHY WITH A WET-SILYLATED AND DRY-DEVELOPED COMMERCIAL PHOTORESIST, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3914-3918
Authors:
GOGOLIDES E
YANNAKOPOULOU K
TRAVERSE A
NASSIOPOULOS AG
TSOIS E
HATZAKIS M
Citation: E. Gogolides et al., CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ-5214(TM) PHOTORESIST, Microelectronic engineering, 25(1), 1994, pp. 75-90
Authors:
GOGOLIDES E
BAIK KH
YANNAKOPOULOU K
VANDENHOVE L
HATZAKIS M
Citation: E. Gogolides et al., LITHOGRAPHIC EVALUATION OF A NEW WET SILYLATION PROCESS USING SAFE SOLVENTS AND THE COMMERCIAL PHOTORESIST AZ 5214E(TM), Microelectronic engineering, 23(1-4), 1994, pp. 267-270
Authors:
GLEZOS N
RAPTIS I
HATZAKIS M
Citation: N. Glezos et al., LITHOS - A FAST-ELECTRON BEAM LITHOGRAPHY SIMULATOR, Microelectronic engineering, 23(1-4), 1994, pp. 417-420
Authors:
RAPTIS I
GLEZOS N
HATZAKIS M
Citation: I. Raptis et al., ANALYTICAL EVALUATION OF THE ENERGY DEPOSITION FUNCTION IN ELECTRON-BEAM LITHOGRAPHY IN THE CASE OF A COMPOSITE SUBSTRATE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2754-2757
Authors:
GOGOLIDES E
YANNAKOPOULOU K
NASSIOPOULOS AG
TSOIS E
HATZAKIS M
Citation: E. Gogolides et al., CHARACTERIZATION OF A POSITIVE-TONE WET SILYLATION PROCESS WITH THE AZ 5214TM PHOTORESIST, Microelectronic engineering, 21(1-4), 1993, pp. 263-266
Authors:
RAPTIS I
GLEZOS N
HATZAKIS M
Citation: I. Raptis et al., USE OF THE BOLTZMANN TRANSPORT-EQUATION FOR THE EVALUATION OF ENERGY DEPOSITION IN THE CASE OF ELECTRON SENSITIVE RESIST FILMS OVER COMPOSITE SUBSTRATES, Microelectronic engineering, 21(1-4), 1993, pp. 289-292
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