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Results: 1-25/52
Authors:
MERTENS K
OPITZ B
HOVEL R
HEIME K
SCHMITT HJ
Citation: K. Mertens et al., FIRST REALIZED POLARIZATION CONVERTER BASED ON HYBRID SUPERMODES, IEEE photonics technology letters, 10(3), 1998, pp. 388-390
Authors:
SCHINELLER B
JUNAS Y
HEUKEN M
HEIME K
Citation: B. Schineller et al., INVESTIGATION OF PROCESS TECHNOLOGIES FOR THE FABRICATION OF ALGAINP MESA ULTRA-HIGH BRIGHTNESS LIGHT-EMITTING DIODE, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 34-38
Authors:
SCHAPERS T
ENGELS G
LUTH H
BEHET M
MOULIN D
KUSTERS AM
HEUKEN M
HEIME K
Citation: T. Schapers et al., MAGNETOTRANSPORT OF INAS-QUANTUM WELLS USING INP0.69SB0.31 AS A BARRIER MATERIAL, Superlattices and microstructures, 23(2), 1998, pp. 307-313
Authors:
YABLONSKII GP
GURSKII AL
LUTSENKO EV
MARKO IP
SCHINELLER B
GUTTZEIT A
SCHON O
HEUKEN M
HEIME K
BECCARD R
SCHMITZ D
JUERGENSEN H
Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228
Authors:
DREWS D
SCHNEIDER A
WERNINGHAUS T
BEHRES A
HEUKEN M
HEIME K
ZAHN DRT
Citation: D. Drews et al., CHARACTERIZATION OF MOVPE GROWN INPSB INAS HETEROSTRUCTURES/, Applied surface science, 123, 1998, pp. 746-750
Authors:
LIU Q
LAKNER H
MENDORF C
TAUDT W
HEUKEN M
HEIME K
KUBALEK E
Citation: Q. Liu et al., THE INFLUENCE OF STRUCTURAL DEFECTS IN ZNSE GAAS HETEROSTRUCTURES ON LUMINESCENCE PROPERTIES/, Journal of physics. D, Applied physics (Print), 31(19), 1998, pp. 2421-2425
Authors:
XU J
CHENG XJ
BEHRES A
HEIME K
Citation: J. Xu et al., CALCULATION OF LATERAL DISTRIBUTION OF LATTICE-CONSTANT FOR HORIZONTAL MOVPE GROWN QUATERNARY ALLOYS (VOL 193, PG 50, 1998), Journal of crystal growth, 193(4), 1998, pp. 738-738
CALCULATION OF LATERAL DISTRIBUTION OF LATTICE-CONSTANT FOR HORIZONTAL MOVPE GROWN QUATERNARY ALLOYS
Authors:
XU J
CHENG XJ
BEHRES A
HEIME K
Citation: J. Xu et al., CALCULATION OF LATERAL DISTRIBUTION OF LATTICE-CONSTANT FOR HORIZONTAL MOVPE GROWN QUATERNARY ALLOYS, Journal of crystal growth, 193(1-2), 1998, pp. 50-54
Authors:
XU XG
GIESEN C
HOVEL R
HEUKEN M
HEIME K
Citation: Xg. Xu et al., SURFACE-MORPHOLOGY AND GROWTH-RATE VARIATION OF INP ON PATTERNED SUBSTRATES USING TERTIARYBUTYLPHOSPHINE, Journal of crystal growth, 191(3), 1998, pp. 341-346
Authors:
ECKEY L
VONGFUG U
HOLST J
HOFFMANN A
SCHINELLER B
HEIME K
HEUKEN M
SCHON O
BECCARD R
Citation: L. Eckey et al., COMPENSATION EFFECTS IN MG-DOPED GAN EPILAYERS, Journal of crystal growth, 190, 1998, pp. 523-527
Authors:
SCHINELLER B
GUTTZEIT A
VERTOMMEN F
SCHON O
HEUKEN M
HEIME K
BECCARD R
Citation: B. Schineller et al., LIGHT-EMITTING-DIODES AS A MONITOR TO STUDY P-TYPE DOPING OF GAN-BASED HETEROSTRUCTURES GROWN BY MOVPE, Journal of crystal growth, 190, 1998, pp. 798-802
Authors:
ECKEY L
VONGFUG U
HOLST J
HOFFMANN A
KASCHNER A
SIEGLE H
THOMSEN C
SCHINELLER B
HEIME K
HEUKEN M
SCHON O
BECCARD R
Citation: L. Eckey et al., PHOTOLUMINESCENCE AND RAMAN-STUDY OF COMPENSATION EFFECTS IN MG-DOPEDGAN EPILAYERS, Journal of applied physics, 84(10), 1998, pp. 5828-5830
Authors:
HEUKEN M
EICHELSTREIBER CV
BEHRES A
SCHINELLER B
HEIME K
MENDORF C
BROCKT G
LAKNER H
Citation: M. Heuken et al., MOVPE GROWTH OF INPSB INAS HETEROSTRUCTURES FOR MIDINFRARED EMITTERS/, Journal of electronic materials, 26(10), 1997, pp. 1221-1224
Authors:
KUSTERS AM
HEIME K
Citation: Am. Kusters et K. Heime, AL-FREE INP-BASED HIGH-ELECTRON-MOBILITY TRANSISTORS - DESIGN, FABRICATION AND PERFORMANCE, Solid-state electronics, 41(8), 1997, pp. 1159-1170
Authors:
XU XG
GIESEN C
XU J
HEUKEN M
HEIME K
Citation: Xg. Xu et al., SILICON DOPING OF INGAAS GROWN BY MOVPE USING TERTIARYBUTYLARSINE, Journal of crystal growth, 181(1-2), 1997, pp. 26-32
Authors:
BEHRES A
WERNER H
KOHL A
HEIME K
Citation: A. Behres et al., INP GROWTH ON ION-IMPLANTED INP SUBSTRATE - A NEW METHOD TO ACHIEVE SELECTIVE-AREA MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 655-660
Authors:
LAKNER H
UNGERECHTS S
BEHRES A
KOHL A
OPITZ B
HEIME K
WOITOK J
Citation: H. Lakner et al., CHARACTERIZATION OF MOVPE GROWN INGAASP SUPERLATTICES FOR MODULATORS BY ELECTRON-DIFFRACTION, X-RAY-DIFFRACTION AND Z-CONTRAST IMAGING, Journal of crystal growth, 170(1-4), 1997, pp. 732-737
Authors:
TUMMLER J
WOITOK J
HERMANS J
GEURTS J
SCHNEIDER P
MOULIN D
BEHET M
HEIME K
Citation: J. Tummler et al., GROWTH AND CHARACTERIZATION OF SB-BASED HETEROSTRUCTURES GROWN BY LP-MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 772-776
Authors:
VONEICHELSTREIBER C
BEHET M
HEUKEN M
HEIME K
Citation: C. Voneichelstreiber et al., DOPING OF INAS, GASB AND INPSB BY LOW-PRESSURE MOVPE, Journal of crystal growth, 170(1-4), 1997, pp. 783-787
Authors:
HENKIES A
MULLER S
PILLATH J
BAUHOFER W
KOHL A
HEIME K
Citation: A. Henkies et al., ELECTRICAL-TRANSPORT PROPERTIES OF NARROW INGAAS INP QUANTUM-WELLS/, Semiconductor science and technology, 11(2), 1996, pp. 172-176
Authors:
BEHET M
HOVEL R
KOHL A
KUSTERS AM
OPITZ B
HEIME K
Citation: M. Behet et al., MOVPE GROWTH OF III-V COMPOUNDS FOR OPTOELECTRONIC AND ELECTRONIC APPLICATIONS, Microelectronics, 27(4-5), 1996, pp. 297-334
Authors:
BEHET M
SCHNEIDER P
MOULIN D
HEIME K
WOITOK J
TUMMLER J
HERMANS J
GEURTS J
Citation: M. Behet et al., LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY AND CHARACTERIZATION OF(AL,GA)SB GASB HETEROSTRUCTURES/, Journal of crystal growth, 167(3-4), 1996, pp. 415-420
Authors:
BERNTGEN J
WAFFENSCHMIDT E
MUSOLF J
HE XY
HEUKEN M
HEIME K
HOFSCHEN S
WOLFF I
Citation: J. Berntgen et al., LINE IMPEDANCE AND PROPAGATION COEFFICIENT OF NARROW SUPERCONDUCTING COPLANAR LINES MADE OF YBACUO, IEEE transactions on microwave theory and techniques, 44(2), 1996, pp. 318-325
Authors:
HE X
MUSOLF J
WAFFENSCHMIDT E
HEIME K
WOLF H
PIERZ K
Citation: X. He et al., SILICON ION-IMPLANTATION OF YBACUO FILMS FOR BOLOMETER APPLICATION, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2439-2442
Authors:
WAFFENSCHMIDT E
MUSOLF J
HE XY
HEIME K
HOFSCHEN S
WOLFF I
Citation: E. Waffenschmidt et al., PASSIVATION OF YBACUO COPLANAR MICROWAVE STRUCTURES, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2551-2554