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Results: 1-25 | 26-50 | 51-75 | 76-89
Results: 1-25/89
NEW PLASMA CHEMISTRIES FOR DRY-ETCHING OF INGAAIP ALLOYS - BL(3) AND BBR3
Authors: HONG J CHO H MAEDA T ABERNATHY CR PEARTON SJ SHUL RJ HOBSON WS
Citation: J. Hong et al., NEW PLASMA CHEMISTRIES FOR DRY-ETCHING OF INGAAIP ALLOYS - BL(3) AND BBR3, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2690-2694
DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE
Authors: HONG M REN F KUO JM HOBSON WS KWO J MANNAERTS JP LOTHIAN JR CHEN YK
Citation: M. Hong et al., DEPLETION MODE GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH GA2O3(GD2O3) AS THE GATE OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1398-1400
GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/
Authors: REN F KUO JM HONG M HOBSON WS LOTHIAN JR LIN J TSAI HS MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., GA2O3(GD2O3) INGAAS ENHANCEMENT-MODE N-CHANNEL MOSFETS/, IEEE electron device letters, 19(8), 1998, pp. 309-311
COMPARISON OF PLASMA CHEMISTRIES FOR INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAALP ALLOYS
Authors: HONG J LEE JW ABERNATHY CR LAMBERS ES PEARTON SJ SHUL RJ HOBSON WS
Citation: J. Hong et al., COMPARISON OF PLASMA CHEMISTRIES FOR INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAALP ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1497-1501
INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CL-2AND BCL3 CHEMISTRIES
Authors: HONG J LAMBERS ES ABERNATHY CR PEARTON SJ SHUL RJ HOBSON WS
Citation: J. Hong et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF INGAP, ALINP, AND ALGAP IN CL-2AND BCL3 CHEMISTRIES, Journal of electronic materials, 27(3), 1998, pp. 132-137
INDUCTIVELY-COUPLED PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL-2-BASED CHEMISTRIES
Authors: LEE JW LAMBERS ES ABERNATHY CR PEARTON SJ SHUL RJ REN F HOBSON WS CONSTANTINE C
Citation: Jw. Lee et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CL-2-BASED CHEMISTRIES, Solid-state electronics, 42(5), 1998, pp. 65-73
ETCHING OF GA-BASED III-V-SEMICONDUCTORS IN INDUCTIVELY-COUPLED AR AND CH4 H-2-BASED PLASMA CHEMISTRIES/
Authors: LEE JW ABERNATHY CR PEARTON SJ CONSTANTINE C SHUL RJ HOBSON WS
Citation: Jw. Lee et al., ETCHING OF GA-BASED III-V-SEMICONDUCTORS IN INDUCTIVELY-COUPLED AR AND CH4 H-2-BASED PLASMA CHEMISTRIES/, Plasma sources science & technology, 6(4), 1997, pp. 499-507
DAMAGE INVESTIGATION IN ALGAAS AND INGAP EXPOSED TO HIGH ION DENSITY AR AND SF6 PLASMAS
Authors: LEE JW LEE KN STRADTMANN RR ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., DAMAGE INVESTIGATION IN ALGAAS AND INGAP EXPOSED TO HIGH ION DENSITY AR AND SF6 PLASMAS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 890-893
DRY-ETCHING OF III-V SEMICONDUCTORS IN IBR AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., DRY-ETCHING OF III-V SEMICONDUCTORS IN IBR AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/, Journal of electronic materials, 26(5), 1997, pp. 429-435
EFFECT OF ION DAMAGE ON THE ELECTRICAL AND OPTICAL BEHAVIOR OF P-TYPEGAAS AND INGAP
Authors: LEE KN LEE JW HONG J ABERNATHY CR PEARTON SJ HOBSON WS
Citation: Kn. Lee et al., EFFECT OF ION DAMAGE ON THE ELECTRICAL AND OPTICAL BEHAVIOR OF P-TYPEGAAS AND INGAP, Journal of electronic materials, 26(11), 1997, pp. 1279-1282
COMPARISON OF ECR PLASMA CHEMISTRIES FOR ETCHING OF INGAP AND ALGAP
Authors: HONG J LEE JW ABERNATHY CR PEARTON SJ CONSTANTINE C HOBSON WS REN F
Citation: J. Hong et al., COMPARISON OF ECR PLASMA CHEMISTRIES FOR ETCHING OF INGAP AND ALGAP, Journal of electronic materials, 26(11), 1997, pp. 1303-1309
COMPARISON OF DRY-ETCHING OF III-V SEMICONDUCTORS IN ICL AR AND IBR/AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., COMPARISON OF DRY-ETCHING OF III-V SEMICONDUCTORS IN ICL AR AND IBR/AR ELECTRON-CYCLOTRON-RESONANCE PLASMAS/, Journal of electronic materials, 26(11), 1997, pp. 1314-1319
PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .1. GAAS AND RELATED-COMPOUNDS
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .1. GAAS AND RELATED-COMPOUNDS, Plasma chemistry and plasma processing, 17(2), 1997, pp. 155-167
PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .2. INP AND RELATED-COMPOUNDS
Authors: LEE JW HONG J LAMBERS ES ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., PLASMA-ETCHING OF III-V SEMICONDUCTORS IN BCL3 CHEMISTRIES .2. INP AND RELATED-COMPOUNDS, Plasma chemistry and plasma processing, 17(2), 1997, pp. 169-179
ELECTRICAL AND OPTICAL-CHANGES IN ALGAAS AND INGAP DURING DIELECTRIC ETCHING IN ECR SF6 PLASMAS
Authors: LEE KN LEE JW ABERNATHY CR PEARTON SJ HOBSON WS REN F
Citation: Kn. Lee et al., ELECTRICAL AND OPTICAL-CHANGES IN ALGAAS AND INGAP DURING DIELECTRIC ETCHING IN ECR SF6 PLASMAS, Solid-state electronics, 41(3), 1997, pp. 401-404
DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE
Authors: REN F HONG M HOBSON WS KUO JM LOTHIAN JR MANNAERTS JP KWO J CHU SNG CHEN YK CHO AY
Citation: F. Ren et al., DEMONSTRATION OF ENHANCEMENT-MODE P-CHANNEL AND M-CHANNEL GAAS MOSFETS WITH GA2O3(GD2O3) AS GATE OXIDE, Solid-state electronics, 41(11), 1997, pp. 1751-1753
ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS
Authors: PASSLACK M HONG M SCHUBERT EF ZYDZIK GJ MANNAERTS JP HOBSON WS HARRIS TD
Citation: M. Passlack et al., ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS, Journal of applied physics, 81(11), 1997, pp. 7647-7661
MIRROR PASSIVATION OF INGAAS LASERS
Authors: DUTTA NK HOBSON WS ZYDZIK GJ DEJONG JF PARAYANTHAL P PASSLACK M CHAKRABARTI UK
Citation: Nk. Dutta et al., MIRROR PASSIVATION OF INGAAS LASERS, Electronics Letters, 33(3), 1997, pp. 213-214
HIGH-POWER INGAAS GAASP/INGAP SURFACE-EMITTING LASER/
Authors: TAYAHI MB DUTTA NK HOBSON WS VAKHSHOORI D LOPATA J WYNN J
Citation: Mb. Tayahi et al., HIGH-POWER INGAAS GAASP/INGAP SURFACE-EMITTING LASER/, Electronics Letters, 33(21), 1997, pp. 1794-1795
INDUCTIVELY-COUPLED AR PLASMA DAMAGE IN ALGAAS
Authors: LEE JW HAYS D ABERNATHY CR PEARTON SJ HOBSON WS CONSTANTINE C
Citation: Jw. Lee et al., INDUCTIVELY-COUPLED AR PLASMA DAMAGE IN ALGAAS, Journal of the Electrochemical Society, 144(9), 1997, pp. 245-247
INDUCTIVELY-COUPLED PLASMA ETCH DAMAGE IN GAAS AND INP SCHOTTKY DIODES
Authors: LEE JW ABERNATHY CR PEARTON SJ REN F HOBSON WS SHUL RJ CONSTANTINE C BARRATT C
Citation: Jw. Lee et al., INDUCTIVELY-COUPLED PLASMA ETCH DAMAGE IN GAAS AND INP SCHOTTKY DIODES, Journal of the Electrochemical Society, 144(4), 1997, pp. 1417-1422
TUNABLE INGAAS GAAS INGAP LASER
Authors: DUTTA NK HOBSON WS LOPATA J ZYDZIK G
Citation: Nk. Dutta et al., TUNABLE INGAAS GAAS INGAP LASER, Applied physics letters, 70(10), 1997, pp. 1219-1220
CL-2 AR PLASMA-ETCHING OF BINARY, TERNARY, AND QUATERNARY IN-BASED COMPOUND SEMICONDUCTORS/
Authors: LEE JW HONG J ABERNATHY CR LAMBERS ES PEARTON SJ HOBSON WS REN F
Citation: Jw. Lee et al., CL-2 AR PLASMA-ETCHING OF BINARY, TERNARY, AND QUATERNARY IN-BASED COMPOUND SEMICONDUCTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2567-2573
BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP
Authors: REN F LOTHIAN JR KUO JM HOBSON WS LOPATA J CABALLERO JA PEARTON SJ COLE MW
Citation: F. Ren et al., BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1758-1763
HIGH MICROWAVE-POWER ELECTRON-CYCLOTRON-RESONANCE ETCHING OF III-V SEMICONDUCTORS IN CH4 H-2/AR/
Authors: PEARTON SJ LEE JW LAMBERS ES MILEHAM JR ABERNATHY CR HOBSON WS REN F SHUL RJ
Citation: Sj. Pearton et al., HIGH MICROWAVE-POWER ELECTRON-CYCLOTRON-RESONANCE ETCHING OF III-V SEMICONDUCTORS IN CH4 H-2/AR/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 118-125
Risultati: 1-25 | 26-50 | 51-75 | 76-89