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Results: 1-25 |
Results: 25
THE ROLE OF DEFECT EXCESSES IN DAMAGE FORMATION IN SI DURING ION-IMPLANTATION AT ELEVATED-TEMPERATURE
Authors: HOLLAND OW BUDAI JD NIELSEN B
Citation: Ow. Holland et al., THE ROLE OF DEFECT EXCESSES IN DAMAGE FORMATION IN SI DURING ION-IMPLANTATION AT ELEVATED-TEMPERATURE, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 253(1-2), 1998, pp. 240-248
MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/
Authors: GARDNER JA EDWARDS A RAO MV PAPANICOLAOU N KELNER G HOLLAND OW CAPANO MA GHEZZO M KRETCHMER J
Citation: Ja. Gardner et al., MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/, Journal of applied physics, 83(10), 1998, pp. 5118-5124
EFFICIENT PRODUCTION OF SILICON-ON-INSULATOR FILMS BY COIMPLANTATION OF HE+ WITH H+
Authors: AGARWAL A HAYNES TE VENEZIA VC HOLLAND OW EAGLESHAM DJ
Citation: A. Agarwal et al., EFFICIENT PRODUCTION OF SILICON-ON-INSULATOR FILMS BY COIMPLANTATION OF HE+ WITH H+, Applied physics letters, 72(9), 1998, pp. 1086-1088
SURFACE CHARACTERIZATION OF SILICON-ON-INSULATOR MATERIAL
Authors: LIN KC HOLLAND OW FELDMAN LC WEITERING HH
Citation: Kc. Lin et al., SURFACE CHARACTERIZATION OF SILICON-ON-INSULATOR MATERIAL, Applied physics letters, 72(18), 1998, pp. 2313-2315
RAPID THERMAL ANNEALING OF ION-IMPLANTED 6H-SIC BY MICROWAVE PROCESSING
Authors: GARDNER JA RAO MV TIAN YL HOLLAND OW ROTH EG CHI PH AHMAD I
Citation: Ja. Gardner et al., RAPID THERMAL ANNEALING OF ION-IMPLANTED 6H-SIC BY MICROWAVE PROCESSING, Journal of electronic materials, 26(3), 1997, pp. 144-150
ION-IMPLANTATION DOPING OF OMCVD GROWN GAN
Authors: EDWARDS A RAO MV MOLNAR B WICKENDEN AE HOLLAND OW CHI PH
Citation: A. Edwards et al., ION-IMPLANTATION DOPING OF OMCVD GROWN GAN, Journal of electronic materials, 26(3), 1997, pp. 334-339
SPECIAL ISSUE ON LOW-ENERGY PROCESSES IN ELECTRONIC MATERIALS - FOREWORD
Authors: KUMAR D SINGH RK PEARTON SJ HOLLAND OW CLARKE R
Citation: D. Kumar et al., SPECIAL ISSUE ON LOW-ENERGY PROCESSES IN ELECTRONIC MATERIALS - FOREWORD, Journal of electronic materials, 26(11), 1997, pp. 1265-1265
METHODS OF DEFECT-ENGINEERING SHALLOW JUNCTIONS FORMED BY B-IMPLANTATION IN SI()
Authors: ROTH EG HOLLAND OW VENEZIA VC NIELSEN B
Citation: Eg. Roth et al., METHODS OF DEFECT-ENGINEERING SHALLOW JUNCTIONS FORMED BY B-IMPLANTATION IN SI(), Journal of electronic materials, 26(11), 1997, pp. 1349-1354
THE ROLE OF DOSE AND POSITION ON THE CONCENTRATION OF RESIDUAL POINT-DEFECTS IN AS-IMPLANTED WAFERS
Authors: PRUSSIN S HOLLAND OW
Citation: S. Prussin et Ow. Holland, THE ROLE OF DOSE AND POSITION ON THE CONCENTRATION OF RESIDUAL POINT-DEFECTS IN AS-IMPLANTED WAFERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 18-21
NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE
Authors: DWIGHT D RAO MV HOLLAND OW KELNER G CHI PH KRETCHMER J GHEZZO M
Citation: D. Dwight et al., NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE, Journal of applied physics, 82(11), 1997, pp. 5327-5333
ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION
Authors: CHASON E PICRAUX ST POATE JM BORLAND JO CURRENT MI DELARUBIA TD EAGLESHAM DJ HOLLAND OW LAW ME MAGEE CW MAYER JW MELNGAILIS J TASCH AF
Citation: E. Chason et al., ION-BEAMS IN SILICON PROCESSING AND CHARACTERIZATION, Journal of applied physics, 81(10), 1997, pp. 6513-6561
PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC
Authors: RAO MV GARDNER JA CHI PH HOLLAND OW KELNER G KRETCHMER J GHEZZO M
Citation: Mv. Rao et al., PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC, Journal of applied physics, 81(10), 1997, pp. 6635-6641
ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC
Authors: GARDNER J RAO MV HOLLAND OW KELNER G SIMONS DS CHI PH ANDREWS JM KRETCHMER J GHEZZO M
Citation: J. Gardner et al., ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC, Journal of electronic materials, 25(5), 1996, pp. 885-892
AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC
Authors: RAO MV GRIFFITHS P GARDNER J HOLLAND OW GHEZZO M KRETCHMER J KELNER G FREITAS JA
Citation: Mv. Rao et al., AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC, Journal of electronic materials, 25(1), 1996, pp. 75-80
IMPLANTATION OF SI UNDER EXTREME CONDITIONS - THE EFFECTS OF HIGH-TEMPERATURE AND DOSE ON DAMAGE ACCUMULATION
Authors: HOLLAND OW XIE L NIELSEN B ZHOU DS
Citation: Ow. Holland et al., IMPLANTATION OF SI UNDER EXTREME CONDITIONS - THE EFFECTS OF HIGH-TEMPERATURE AND DOSE ON DAMAGE ACCUMULATION, Journal of electronic materials, 25(1), 1996, pp. 99-106
FORMATION OF ULTRATHIN, BURIED OXIDES IN SI BY O-IMPLANTATION( ION)
Authors: HOLLAND OW FATHY D SADANA DK
Citation: Ow. Holland et al., FORMATION OF ULTRATHIN, BURIED OXIDES IN SI BY O-IMPLANTATION( ION), Applied physics letters, 69(5), 1996, pp. 674-676
P-N-JUNCTION FORMATION IN 6H-SIC BY ACCEPTOR IMPLANTATION INTO N-TYPESUBSTRATE
Authors: RAO MV GARDNER J GRIFFITHS P HOLLAND OW KELNER G CHI PH SIMONS DS
Citation: Mv. Rao et al., P-N-JUNCTION FORMATION IN 6H-SIC BY ACCEPTOR IMPLANTATION INTO N-TYPESUBSTRATE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 333-338
AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC
Authors: RAO MV GRIFFITHS P HOLLAND OW KELNER G FREITAS JA SIMONS DS CHI PH GHEZZO M
Citation: Mv. Rao et al., AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC, Journal of applied physics, 77(6), 1995, pp. 2479-2485
TECHNIQUE TO SUPPRESS DISLOCATION FORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION OF SI
Authors: HOLLAND OW THOMAS DK ZHOU DS
Citation: Ow. Holland et al., TECHNIQUE TO SUPPRESS DISLOCATION FORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION OF SI, Applied physics letters, 66(15), 1995, pp. 1892-1894
FORMATION OF EPITAXIAL AND TEXTURED PLATINUM FILMS ON CERAMICS-(100) MGO SINGLE-CRYSTALS BY PULSED-LASER DEPOSITION
Authors: NARAYAN J TIWARI P JAGANNADHAM K HOLLAND OW
Citation: J. Narayan et al., FORMATION OF EPITAXIAL AND TEXTURED PLATINUM FILMS ON CERAMICS-(100) MGO SINGLE-CRYSTALS BY PULSED-LASER DEPOSITION, Applied physics letters, 64(16), 1994, pp. 2093-2095
LATTICE DAMAGE IN ION-IMPLANTED SILICON-GERMANIUM ALLOYS
Authors: HAYNES TE HOLLAND OW
Citation: Te. Haynes et Ow. Holland, LATTICE DAMAGE IN ION-IMPLANTED SILICON-GERMANIUM ALLOYS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 901-905
DEFECTS IN MEV SI-IMPLANTED SI PROBED WITH POSITRONS
Authors: NIELSEN B HOLLAND OW LEUNG TC LYNN KG
Citation: B. Nielsen et al., DEFECTS IN MEV SI-IMPLANTED SI PROBED WITH POSITRONS, Journal of applied physics, 74(3), 1993, pp. 1636-1639
THERMALLY STABLE, BURIED HIGH-RESISTANCE LAYERS IN P-TYPE INP OBTAINED BY MEV ENERGY TI IMPLANTATION
Authors: MARTIN JM NADELLA RK VELLANKI J RAO MV HOLLAND OW
Citation: Jm. Martin et al., THERMALLY STABLE, BURIED HIGH-RESISTANCE LAYERS IN P-TYPE INP OBTAINED BY MEV ENERGY TI IMPLANTATION, Journal of applied physics, 73(11), 1993, pp. 7238-7243
DAMAGE ACCUMULATION DURING HIGH-DOSE, O+ IMPLANTATION IN SI
Authors: HOLLAND OW ZHOU DS THOMAS DK
Citation: Ow. Holland et al., DAMAGE ACCUMULATION DURING HIGH-DOSE, O+ IMPLANTATION IN SI, Applied physics letters, 63(7), 1993, pp. 896-898
STRAIN RELIEF MECHANISM FOR DAMAGE GROWTH DURING HIGH-DOSE, O+ IMPLANTATION OF SI
Authors: ZHOU DS HOLLAND OW BUDAI JD
Citation: Ds. Zhou et al., STRAIN RELIEF MECHANISM FOR DAMAGE GROWTH DURING HIGH-DOSE, O+ IMPLANTATION OF SI, Applied physics letters, 63(26), 1993, pp. 3580-3582
Risultati: 1-25 |