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Results: 1-21 |
Results: 21
OPTIMIZATION OF PROGRAM THRESHOLD WINDOW FROM UNDERSTANDING OF NOVEL FAST CHARGE LOSS IN NONVOLATILE MEMORY
Authors: SHEN SJ HSU CCH LIANG MS
Citation: Sj. Shen et al., OPTIMIZATION OF PROGRAM THRESHOLD WINDOW FROM UNDERSTANDING OF NOVEL FAST CHARGE LOSS IN NONVOLATILE MEMORY, JPN J A P 1, 37(8), 1998, pp. 4306-4310
EFFECTIVE CHANNEL-LENGTH AND SOURCE-DRAIN SERIES-RESISTANCE DETERMINATION AFTER ELECTRICAL GATE LENGTH VERIFICATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
Authors: CHANG TH LO JG KUO TC HSU CCH YU SY TSENG KF LU LS
Citation: Th. Chang et al., EFFECTIVE CHANNEL-LENGTH AND SOURCE-DRAIN SERIES-RESISTANCE DETERMINATION AFTER ELECTRICAL GATE LENGTH VERIFICATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, JPN J A P 1, 37(3A), 1998, pp. 796-800
DEGRADATION OF FLASH MEMORY USING DRAIN-AVALANCHE HOT-ELECTRON (DAHE)SELF-CONVERGENCE OPERATION SCHEME
Authors: SHEN SJ YANG ECS WONG WJ WANG YS LIN CJ LIANG MS HSU CCH
Citation: Sj. Shen et al., DEGRADATION OF FLASH MEMORY USING DRAIN-AVALANCHE HOT-ELECTRON (DAHE)SELF-CONVERGENCE OPERATION SCHEME, JPN J A P 2, 37(7A), 1998, pp. 778-780
SUPPRESSION OF COBALT SILICIDE AGGLOMERATION USING NITROGEN (N-2(+)) IMPLANTATION
Authors: SUN WT LIAW MC HSU CCH
Citation: Wt. Sun et al., SUPPRESSION OF COBALT SILICIDE AGGLOMERATION USING NITROGEN (N-2(+)) IMPLANTATION, IEEE electron device letters, 19(5), 1998, pp. 163-166
IMPACT OF NITROGEN (N-2(-STABILITY OF COBALT SILICIDE FORMED ON POLYSILICON GATE()) IMPLANTATION INTO POLYSILICON GATE ON THERMAL)
Authors: SUN WT LIAW MC HSIEH KC HSU CCH
Citation: Wt. Sun et al., IMPACT OF NITROGEN (N-2(-STABILITY OF COBALT SILICIDE FORMED ON POLYSILICON GATE()) IMPLANTATION INTO POLYSILICON GATE ON THERMAL), I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1912-1919
PERFORMANCE AND RELIABILITY TRADE-OFF OF LARGE-TILTED-ANGLE IMPLANT P-POCKET ON STACKED-GATE MEMORY DEVICES
Authors: SHEN SJ CHEN HM LIN CJ CHEN HH HONG G HSU CCH
Citation: Sj. Shen et al., PERFORMANCE AND RELIABILITY TRADE-OFF OF LARGE-TILTED-ANGLE IMPLANT P-POCKET ON STACKED-GATE MEMORY DEVICES, JPN J A P 1, 36(7A), 1997, pp. 4289-4294
A NEW ULTRA-LOW VOLTAGE SILICON-RICH-OXIDE (SRO) NAND CELL
Authors: LIN CJ HSU CCH CHEN HH HONG G
Citation: Cj. Lin et al., A NEW ULTRA-LOW VOLTAGE SILICON-RICH-OXIDE (SRO) NAND CELL, JPN J A P 1, 36(3A), 1997, pp. 1030-1034
IMPROVING GATE OXIDE INTEGRITY OF COBALT SILICIDED P-TYPE POLYSILICONGATE USING ARSENIC IMPLANTATION
Authors: SUN WT LIAW WW LIAW MC HSIEH KC HSU CCH
Citation: Wt. Sun et al., IMPROVING GATE OXIDE INTEGRITY OF COBALT SILICIDED P-TYPE POLYSILICONGATE USING ARSENIC IMPLANTATION, JPN J A P 2, 36(2A), 1997, pp. 89-92
QUANTUM-SIZE EFFECTS ON PHOTOLUMINESCENCE FROM SI NANOCRYSTALS IN PECVD SILICON-RICH-OXIDE
Authors: YANG CS LIN CJ KUEI PY HORNG SF HSU CCH LIAW MC
Citation: Cs. Yang et al., QUANTUM-SIZE EFFECTS ON PHOTOLUMINESCENCE FROM SI NANOCRYSTALS IN PECVD SILICON-RICH-OXIDE, Applied surface science, 114, 1997, pp. 116-120
ANTIMONY COIMPLANTATION TO SUPPRESS BORON-PENETRATION IN P-POLY GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS()
Authors: SUN WT YANG CS LIAW MC HSU CCH
Citation: Wt. Sun et al., ANTIMONY COIMPLANTATION TO SUPPRESS BORON-PENETRATION IN P-POLY GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS(), JPN J A P 2, 35(3B), 1996, pp. 377-379
ENHANCED TUNNELING CHARACTERISTICS OF PECVD SILICON-RICH-OXIDE (SRO) FOR THE APPLICATION IN LOW-VOLTAGE FLASH EEPROM
Authors: LIN CJ HSU CCH CHEN HH HONG G LU LS
Citation: Cj. Lin et al., ENHANCED TUNNELING CHARACTERISTICS OF PECVD SILICON-RICH-OXIDE (SRO) FOR THE APPLICATION IN LOW-VOLTAGE FLASH EEPROM, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2021-2023
LOW-TEMPERATURE HOLE MOBILITY ANOMALY IN COMPENSATED P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
Authors: LU WL GUO JC KAO CH HSU CCH LU LS
Citation: Wl. Lu et al., LOW-TEMPERATURE HOLE MOBILITY ANOMALY IN COMPENSATED P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR, JPN J A P 1, 34(7A), 1995, pp. 3413-3417
SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED P-TYPE GATE MOSFET BY TRAPPING OF FLUORINES IN AMORPHOUS GATE
Authors: LIN CY CHANG CY HSU CCH
Citation: Cy. Lin et al., SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED P-TYPE GATE MOSFET BY TRAPPING OF FLUORINES IN AMORPHOUS GATE, I.E.E.E. transactions on electron devices, 42(8), 1995, pp. 1503-1509
TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET
Authors: GUO JC CHANG MC LU CY HSU CCH CHUNG SSS
Citation: Jc. Guo et al., TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 288-294
DIRECT OBSERVATION OF CHANNEL-DOPING-DEPENDENT REVERSE SHORT-CHANNEL EFFECT USING DECOUPLED C-V TECHNIQUE
Authors: GUO JC HSU CCH CHUNG SSS
Citation: Jc. Guo et al., DIRECT OBSERVATION OF CHANNEL-DOPING-DEPENDENT REVERSE SHORT-CHANNEL EFFECT USING DECOUPLED C-V TECHNIQUE, JPN J A P 1, 33(1B), 1994, pp. 630-634
ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P-CHANNEL MOSFET( POLYSILICON GATED P)
Authors: CHANG CY LIN CY CHOU JW HSU CCH PAN HT KO J
Citation: Cy. Chang et al., ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P-CHANNEL MOSFET( POLYSILICON GATED P), IEEE electron device letters, 15(11), 1994, pp. 437-439
PERFORMANCE AND RELIABILITY EVALUATION OF HIGH DIELECTRIC LDD SPACER ON DEEP-SUBMICROMETER LDD MOSFET
Authors: GUO JC LU CY HSU CCH LIN PS CHUNG SSS
Citation: Jc. Guo et al., PERFORMANCE AND RELIABILITY EVALUATION OF HIGH DIELECTRIC LDD SPACER ON DEEP-SUBMICROMETER LDD MOSFET, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1239-1248
A COMPREHENSIVE STUDY OF HOT-CARRIER INSTABILITY IN P-TYPE AND N-TYPEPOLY-SI GATED MOSFETS
Authors: HSU CCH WEN DS WORDEMAN MR TAUR Y NING TH
Citation: Cch. Hsu et al., A COMPREHENSIVE STUDY OF HOT-CARRIER INSTABILITY IN P-TYPE AND N-TYPEPOLY-SI GATED MOSFETS, I.E.E.E. transactions on electron devices, 41(5), 1994, pp. 675-680
A NEW APPROACH TO DETERMINE THE EFFECTIVE CHANNEL-LENGTH AND THE DRAIN-AND-SOURCE SERIES RESISTANCE OF MINIATURIZED MOSFETS
Authors: GUO JC CHUNG SSS HSU CCH
Citation: Jc. Guo et al., A NEW APPROACH TO DETERMINE THE EFFECTIVE CHANNEL-LENGTH AND THE DRAIN-AND-SOURCE SERIES RESISTANCE OF MINIATURIZED MOSFETS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1811-1818
REDUCED HOT-CARRIER RELIABILITY DEGRADATION OF X-RAY-IRRADIATED MOSFETS IN A 0.25 MU-M CMOS TECHNOLOGY WITH ULTRA-THIN GATE OXIDE
Authors: ACOVIC A HSU CCH HSIA LC AITKEN JM
Citation: A. Acovic et al., REDUCED HOT-CARRIER RELIABILITY DEGRADATION OF X-RAY-IRRADIATED MOSFETS IN A 0.25 MU-M CMOS TECHNOLOGY WITH ULTRA-THIN GATE OXIDE, Solid-state electronics, 36(9), 1993, pp. 1353-1355
EFFECTS OF X-RAY-IRRADIATION ON GIDL IN MOSFETS
Authors: ACOVIC A HSU CCH HSIA LC BALASINSKI A MA TP
Citation: A. Acovic et al., EFFECTS OF X-RAY-IRRADIATION ON GIDL IN MOSFETS, IEEE electron device letters, 13(4), 1992, pp. 189-191
Risultati: 1-21 |