ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-37

Results: 1-25/37

Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation

Authors: Heinzel, T Held, R Luscher, S Ensslin, K Wegscheider, W Bichler, M

Citation: T. Heinzel et al., Electronic properties of nanostructures defined in Ga[Al]As heterostructures by local oxidation, PHYSICA E, 9(1), 2001, pp. 84-93

Histone deacetylase as a therapeutic target

Authors: Kramer, OH Gottlicher, M Heinzel, T

Citation: Oh. Kramer et al., Histone deacetylase as a therapeutic target, TRENDS ENDO, 12(7), 2001, pp. 294-300

Analysis of the temperature-dependent quantum point contact conductance inrelation to the metal-insulator transition in two dimensions

Authors: Senz, V Heinzel, T Ihn, T Lindemann, S Held, R Ensslin, K Wegscheider, W Bichler, M

Citation: V. Senz et al., Analysis of the temperature-dependent quantum point contact conductance inrelation to the metal-insulator transition in two dimensions, J PHYS-COND, 13(17), 2001, pp. 3831-3837

Electronic properties of AFM-defined semiconductor nanostructures

Authors: Luscher, S Held, R Fuhrer, A Heinzel, T Ensslin, K Bichler, M Wegscheider, W

Citation: S. Luscher et al., Electronic properties of AFM-defined semiconductor nanostructures, MAT SCI E C, 15(1-2), 2001, pp. 153-157

Phase diagram of a quantum dot with steep walls in strong magnetic fields

Authors: Fuhrer, A Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M

Citation: A. Fuhrer et al., Phase diagram of a quantum dot with steep walls in strong magnetic fields, PHYS ST S-B, 224(2), 2001, pp. 555-560

Investigation of spin pairing in a semiconductor quantum dot

Authors: Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M

Citation: S. Luscher et al., Investigation of spin pairing in a semiconductor quantum dot, PHYS ST S-B, 224(2), 2001, pp. 561-565

Modelling background charge rearrangements near single-electron transistors as a Poisson process

Authors: Muller, HO Furlan, M Heinzel, T Ensslin, K

Citation: Ho. Muller et al., Modelling background charge rearrangements near single-electron transistors as a Poisson process, EUROPH LETT, 55(2), 2001, pp. 253-259

Transport properties of quantum dots with steep walls - art. no. 125309

Authors: Fuhrer, A Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M

Citation: A. Fuhrer et al., Transport properties of quantum dots with steep walls - art. no. 125309, PHYS REV B, 6312(12), 2001, pp. 5309

Shot noise by quantum scattering in chaotic cavities

Authors: Oberholzer, S Sukhorukov, EV Strunk, C Schonenberger, C Heinzel, T Holland, M

Citation: S. Oberholzer et al., Shot noise by quantum scattering in chaotic cavities, PHYS REV L, 86(10), 2001, pp. 2114-2117

Signatures of spin pairing in chaotic quantum dots

Authors: Luscher, S Heinzel, T Ensslin, K Wegscheider, W Bichler, M

Citation: S. Luscher et al., Signatures of spin pairing in chaotic quantum dots, PHYS REV L, 86(10), 2001, pp. 2118-2121

Energy spectra of quantum rings

Authors: Fuhrer, A Luescher, S Ihn, T Heinzel, T Ensslin, K Wegscheider, W Bichler, M

Citation: A. Fuhrer et al., Energy spectra of quantum rings, NATURE, 413(6858), 2001, pp. 822-825

Multiple regions of ETO cooperate in transcriptional repression

Authors: Hildebrand, D Tiefenbach, J Heinzel, T Grez, M Maurer, AB

Citation: D. Hildebrand et al., Multiple regions of ETO cooperate in transcriptional repression, J BIOL CHEM, 276(13), 2001, pp. 9889-9895

Single-hole transistor in a p-Si/SiGe quantum well

Authors: Dotsch, U Gennser, U David, C Dehlinger, G Grutzmacher, D Heinzel, T Luscher, S Ensslin, K

Citation: U. Dotsch et al., Single-hole transistor in a p-Si/SiGe quantum well, APPL PHYS L, 78(3), 2001, pp. 341-343

Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells

Authors: Senz, V Heinzel, T Ihn, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U

Citation: V. Senz et al., Coexistence of weak localization and a metallic phase in Si/SiGe quantum wells, PHYS REV B, 61(8), 2000, pp. R5082-R5085

Realistic and relevant models for the description of SET transistors

Authors: Furlan, M Eichenberger, AL Heinzel, T Jeanneret, B Lotkhov, SV

Citation: M. Furlan et al., Realistic and relevant models for the description of SET transistors, PHYSICA B, 284, 2000, pp. 1798-1799

VDR-Alien: a novel, DNA-selective vitamin D-3 receptor-corepressor partnership

Authors: Polly, P Herdick, M Moehren, U Baniahmad, A Heinzel, T Carlberg, C

Citation: P. Polly et al., VDR-Alien: a novel, DNA-selective vitamin D-3 receptor-corepressor partnership, FASEB J, 14(10), 2000, pp. 1455-1463

Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors

Authors: Furlan, M Heinzel, T Jeanneret, B Lotkhov, SV Ensslin, K

Citation: M. Furlan et al., Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors, EUROPH LETT, 49(3), 2000, pp. 369-375

Shifting a quantum wire through a disordered crystal: Observation of conductance fluctuations in real space

Authors: Heinzel, T Salis, G Held, R Luscher, S Ensslin, K Wegscheider, W Bichler, M

Citation: T. Heinzel et al., Shifting a quantum wire through a disordered crystal: Observation of conductance fluctuations in real space, PHYS REV B, 61(20), 2000, pp. R13353-R13356

Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening

Authors: Senz, V Ihn, T Heinzel, T Ensslin, K Dehlinger, G Grutzmacher, D Gennser, U

Citation: V. Senz et al., Analysis of the metallic phase of two-dimensional holes in SiGe in terms of temperature dependent screening, PHYS REV L, 85(20), 2000, pp. 4357-4360

Coulomb blockade peak statistics influenced by background charge configuration

Authors: Furlan, M Heinzel, T Jeanneret, B Lotkhov, SV

Citation: M. Furlan et al., Coulomb blockade peak statistics influenced by background charge configuration, J L TEMP PH, 118(5-6), 2000, pp. 297-306

In-plane gate single electron transistor fabricated by AFM lithography

Authors: Luscher, S Fuhrer, A Held, R Heinzel, T Ensslin, K Wegscheider, W Bichler, M

Citation: S. Luscher et al., In-plane gate single electron transistor fabricated by AFM lithography, J L TEMP PH, 118(5-6), 2000, pp. 333-342

An optical study of self-assembled InxGa1-xAs/GaAs quantum dots embedded in a two-dimensional electron gas

Authors: Ribeiro, E Cerdeira, F Brasil, MJSP Heinzel, T Ensslin, K Medeiros-Ribeiro, G Petroff, PM

Citation: E. Ribeiro et al., An optical study of self-assembled InxGa1-xAs/GaAs quantum dots embedded in a two-dimensional electron gas, J APPL PHYS, 87(11), 2000, pp. 7994-7998

Transport properties of two-dimensional electron gases in Ga[Al]As heterostructures containing InAs self-assembled quantum dots

Authors: Ribeiro, E Jaggi, R Heinzel, T Ensslin, K Medeiros-Ribeiro, TG Petroff, PM

Citation: E. Ribeiro et al., Transport properties of two-dimensional electron gases in Ga[Al]As heterostructures containing InAs self-assembled quantum dots, MICROEL ENG, 47(1-4), 1999, pp. 73-75

Spectroscopy of coupled one-dimensional subbands

Authors: Salis, G Heinzel, T Ensslin, K Homan, O Bachtold, W Maranowski, K Gossard, AC

Citation: G. Salis et al., Spectroscopy of coupled one-dimensional subbands, MICROEL ENG, 47(1-4), 1999, pp. 175-177

Mode spectroscopy and level coupling in ballistic electron waveguides

Authors: Salis, G Heinzel, T Ensslin, K Homan, OJ Bachtold, W Maranowski, K Gossard, AC

Citation: G. Salis et al., Mode spectroscopy and level coupling in ballistic electron waveguides, PHYS REV B, 60(11), 1999, pp. 7756-7759

Risultati: 1-25 | 26-37