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Results: 1-9 |
Results: 9
Magnetic properties of Co/Pt multilayers deposited on patterned Si substrates
Authors: Landis, S Rodmacq, B Dieny, B Dal'Zotto, B Tedesco, S Heitzmann, M
Citation: S. Landis et al., Magnetic properties of Co/Pt multilayers deposited on patterned Si substrates, J MAGN MAGN, 226, 2001, pp. 1708-1710
Full CMP integration of CVD TiN damascene sub-0.1-mu m metal gate devices for ULSI applications
Authors: Ducroquet, F Achard, H Coudert, F Previtali, B Lugand, JF Ulmer, L Farjot, T Gobil, Y Heitzmann, M Tedesco, S Nier, ME Deleonibus, S
Citation: F. Ducroquet et al., Full CMP integration of CVD TiN damascene sub-0.1-mu m metal gate devices for ULSI applications, IEEE DEVICE, 48(8), 2001, pp. 1816-1821
Interplay of intrinsic and environmental effects on the magnetic properties of free radicals issuing from H-atom addition to cytosine
Authors: Adamo, C Heitzmann, M Meilleur, F Rega, N Scalmani, G Grand, A Cadet, J Barone, V
Citation: C. Adamo et al., Interplay of intrinsic and environmental effects on the magnetic properties of free radicals issuing from H-atom addition to cytosine, J AM CHEM S, 123(29), 2001, pp. 7113-7117
Ultimate sub-25 nm gate length NMOSPETs transport at 293 and 77 K
Authors: Bertrand, G Deleonibus, S Souil, D Caillat, C Guegan, G Tedesco, S Heitzmann, M Mur, P Balestra, F
Citation: G. Bertrand et al., Ultimate sub-25 nm gate length NMOSPETs transport at 293 and 77 K, SUPERLATT M, 28(5-6), 2000, pp. 435-444
A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets
Authors: Deleonibus, S Caillat, C Guegan, G Heitzmann, M Nier, ME Tedesco, S Dal'zotto, B Martin, F Mur, P Papon, AM Lecarval, G Biswas, S Souil, D
Citation: S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets, IEEE ELEC D, 21(4), 2000, pp. 173-175
A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000)
Authors: Deleonibus, S Caillat, C Guegan, G Heitzmann, M Nier, ME Tedesco, SR Dal'zotto, B Martin, F Mur, P Papon, AM Lecarval, G Biswas, S
Citation: S. Deleonibus et al., A 20-nm physical gate length NMOSFET featuring 1.2-nm gate oxide, shallow implanted source and drain and BF2 pockets (vol 21, pg 173, 2000), IEEE ELEC D, 21(12), 2000, pp. 616-616
Process development for 30 nm poly gate patterning on 1.2 nm oxide.
Authors: Heitzmann, M Nier, ME
Citation: M. Heitzmann et Me. Nier, Process development for 30 nm poly gate patterning on 1.2 nm oxide., MICROEL ENG, 53(1-4), 2000, pp. 159-162
Utility of isotachophoresis-capillary zone electrophoresis, mass spectrometry and high-performance size-exclusion chromatography for monitoring of interleukin-6 dimer formation
Authors: Gysler, J Mazereeuw, M Helk, B Heitzmann, M Jaehde, U Schunack, W Tjaden, UR van der Greef, J
Citation: J. Gysler et al., Utility of isotachophoresis-capillary zone electrophoresis, mass spectrometry and high-performance size-exclusion chromatography for monitoring of interleukin-6 dimer formation, J CHROMAT A, 841(1), 1999, pp. 63-73
Domain structure of magnetic layers deposited on patterned silicon
Authors: Landis, S Rodmacq, B Dieny, B Dal'Zotto, B Tedesco, S Heitzmann, M
Citation: S. Landis et al., Domain structure of magnetic layers deposited on patterned silicon, APPL PHYS L, 75(16), 1999, pp. 2473-2475
Risultati: 1-9 |