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Results: 1-13 |
Results: 13
"p-on-n" Si interband tunnel diode grown by molecular beam epitaxy
Authors: Hobart, KD Thompson, PE Rommel, SL Dillon, TE Berger, PR Simons, DS Chi, PH
Citation: Kd. Hobart et al., "p-on-n" Si interband tunnel diode grown by molecular beam epitaxy, J VAC SCI B, 19(1), 2001, pp. 290-293
Special issue on alternative substrate technology - Foreword
Authors: Hobart, KD
Citation: Kd. Hobart, Special issue on alternative substrate technology - Foreword, J ELEC MAT, 30(7), 2001, pp. 797-797
High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy
Authors: Kipshidze, G Nikishin, S Kuryatkov, V Choi, K Gherasoiu, I Prokofyeva, T Holtz, M Temkin, H Hobart, KD Kub, FJ Fatemi, M
Citation: G. Kipshidze et al., High quality AlN and GaN grown on compliant Si/SiC substrates by gas source molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 825-828
pnp Si resonant interband tunnel diode with symmetrical NDR
Authors: Jin, N Berger, PR Rommel, SL Thompson, PE Hobart, KD
Citation: N. Jin et al., pnp Si resonant interband tunnel diode with symmetrical NDR, ELECTR LETT, 37(23), 2001, pp. 1412-1414
Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
Authors: Hobart, KD Kub, FJ Fatemi, M Twigg, ME Thompson, PE Kuan, TS Inoki, CK
Citation: Kd. Hobart et al., Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides, J ELEC MAT, 29(7), 2000, pp. 897-900
Epitaxial Si-based tunnel diodes
Authors: Thompson, PE Hobart, KD Twigg, ME Rommel, SL Jin, N Berger, PR Lake, R Seabaugh, AC Chi, P
Citation: Pe. Thompson et al., Epitaxial Si-based tunnel diodes, THIN SOL FI, 380(1-2), 2000, pp. 145-150
Growth of beta SiC on a ceramic SiC substrate using a thin silicon intermediate layer
Authors: Taylor, C Eshun, E Spencer, MG Hobart, KD Kub, FJ
Citation: C. Taylor et al., Growth of beta SiC on a ceramic SiC substrate using a thin silicon intermediate layer, MAT SCI E B, 61-2, 1999, pp. 583-585
Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities
Authors: Rommel, SL Dillon, TE Berger, PR Thompson, PE Hobart, KD Lake, R Seabaugh, AC
Citation: Sl. Rommel et al., Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities, IEEE ELEC D, 20(7), 1999, pp. 329-331
Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation
Authors: Hobart, KD Kub, FJ
Citation: Kd. Hobart et Fj. Kub, Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation, ELECTR LETT, 35(8), 1999, pp. 675-676
Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation
Authors: Kub, FJ Hobart, KD Pond, JM Kirchoefer, SW
Citation: Fj. Kub et al., Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation, ELECTR LETT, 35(6), 1999, pp. 477-478
Simulation of soft recovery in Si pin rectifiers with ultra-shallow p(+) emitters
Authors: Kub, FJ Ancona, MG Hobart, KD
Citation: Fj. Kub et al., Simulation of soft recovery in Si pin rectifiers with ultra-shallow p(+) emitters, ELECTR LETT, 35(18), 1999, pp. 1591-1592
Transfer of ultrathin silicon layers to polycrystalline SiC substrates forthe growth of 3C-SiC epitaxial films
Authors: Hobart, KD Kub, FJ Fatemi, M Taylor, C Eshun, E Spencer, MG
Citation: Kd. Hobart et al., Transfer of ultrathin silicon layers to polycrystalline SiC substrates forthe growth of 3C-SiC epitaxial films, J ELCHEM SO, 146(10), 1999, pp. 3833-3836
Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
Authors: Thompson, PE Hobart, KD Twigg, ME Jernigan, GG Dillon, TE Rommel, SL Berger, PR Simons, DS Chi, PH Lake, R Seabaugh, AC
Citation: Pe. Thompson et al., Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy, APPL PHYS L, 75(9), 1999, pp. 1308-1310
Risultati: 1-13 |