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Results:
1-15
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Results: 15
Authors:
Weber, D
Hohnsdorf, F
Hausmann, A
Klipp, A
Stavreva, Z
Herrmann, J
Bauch, L
Junack, M
Neef, H
Nichterwitz, M
Finsterbusch, S
Liebmann, R
Kallis, N
Kieslich, A
Citation: D. Weber et al., Impact of substituting SiO2ILD by low k materials into AlCu RIE metallization, MICROEL REL, 41(7), 2001, pp. 1081-1083
Authors:
Hofmann, M
Wagner, A
Ellmers, C
Schlichenmeier, C
Schafer, S
Hohnsdorf, F
Koch, J
Stolz, W
Koch, SW
Ruhle, WW
Hader, J
Moloney, JV
O'Reilly, EP
Borchert, B
Egorov, AY
Riechert, H
Citation: M. Hofmann et al., Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-mu m-wavelength regime, APPL PHYS L, 78(20), 2001, pp. 3009-3011
Authors:
Giannini, C
Carlino, E
Tapfer, L
Hohnsdorf, F
Koch, J
Stolz, W
Citation: C. Giannini et al., Structural properties of (GaIn)(AsN)/GaAs MQW structures grown by MOVPE, MRS I J N S, 5, 2000, pp. NIL_222-NIL_227
Authors:
Klar, PJ
Vicente, PMA
Gruning, H
Heimbrodt, W
Koch, J
Hohnsdorf, F
Stolz, W
Camassel, J
Citation: Pj. Klar et al., Nitrogen-induced band formation in GaNxAs1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance, HIGH PR RES, 18(1-6), 2000, pp. 29-34
Authors:
Wagner, A
Ellmers, C
Hohnsdorf, F
Koch, J
Leu, S
Stolz, W
Hofmann, M
Ruhle, WW
Citation: A. Wagner et al., Emission dynamics and gain of (GaIn)(NAs)/GaAs lasers, PHYS ST S-B, 221(1), 2000, pp. 567-569
Authors:
Koch, J
Hohnsdorf, F
Stolz, W
Citation: J. Koch et al., Optical characterization of (GaIn)(NAs)/GaAs MQW structures, J ELEC MAT, 29(1), 2000, pp. 165-168
Authors:
Hasse, A
Volz, K
Schaper, AK
Koch, J
Hohnsdorf, F
Stolz, W
Citation: A. Hasse et al., TEM investigations of (GaIn)(NAs)/GaAs multi-quantum wells grown by MOVPE, CRYST RES T, 35(6-7), 2000, pp. 787-792
Authors:
Wagner, A
Ellmers, C
Hohnsdorf, F
Koch, J
Agert, C
Leu, S
Hofmann, M
Stolz, W
Ruhle, WW
Citation: A. Wagner et al., (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range, APPL PHYS L, 76(3), 2000, pp. 271-272
Authors:
Klar, PJ
Gruning, H
Heimbrodt, W
Koch, J
Hohnsdorf, F
Stolz, W
Vicente, PMA
Camassel, J
Citation: Pj. Klar et al., From N isoelectronic impurities to N-induced bands in the GaNxAs1-x alloy, APPL PHYS L, 76(23), 2000, pp. 3439-3441
Authors:
Gruning, H
Chen, L
Hartmann, T
Klar, PJ
Heimbrodt, W
Hohnsdorf, F
Koch, J
Stolz, W
Citation: H. Gruning et al., Optical spectroscopic studies of N-related bands in Ga(N,As), PHYS ST S-B, 215(1), 1999, pp. 39-45
Authors:
Hohnsdorf, F
Koch, J
Leu, S
Stolz, W
Borchert, B
Druminski, M
Citation: F. Hohnsdorf et al., Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 mu m, ELECTR LETT, 35(7), 1999, pp. 571-572
Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime
Authors:
Ellmers, C
Hohnsdorf, F
Koch, J
Agert, C
Leu, S
Karaiskaj, D
Hofmann, M
Stolz, W
Ruhle, WW
Citation: C. Ellmers et al., Ultrafast (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser for the 1.3 mu m wavelength regime, APPL PHYS L, 74(16), 1999, pp. 2271-2273
Authors:
Leu, S
Protzmann, H
Hohnsdorf, F
Stolz, W
Steinkirchner, J
Hufgard, E
Citation: S. Leu et al., Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane, J CRYST GR, 195(1-4), 1998, pp. 91-97
Authors:
Leu, S
Hohnsdorf, F
Stolz, W
Becker, R
Salzmann, A
Greiling, A
Citation: S. Leu et al., C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs, J CRYST GR, 195(1-4), 1998, pp. 98-104
Authors:
Hohnsdorf, F
Koch, J
Agert, C
Stolz, W
Citation: F. Hohnsdorf et al., Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy), J CRYST GR, 195(1-4), 1998, pp. 391-396
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1-15
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