ACNP - Italian Periodicals Catalogue

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Results: 1-13 |

Results: 13

Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy

Authors: Sanchez-Almazan, F Gendry, M Regreny, P Bergignat, E Grenet, G Hollinger, G Olivares, J Bremond, G Marty, O Pitaval, M

Citation: F. Sanchez-almazan et al., Growth of GaInTlAs alloys on InP by low temperature molecular beam epitaxy, OPT MATER, 17(1-2), 2001, pp. 271-274

Growth of GalnTlAs layers on InP by molecular beam epitaxy

Authors: Sanchez-Almazan, F Gendry, M Regreny, P Bergignat, E Grenet, G Hollinger, G Olivares, J Bremond, G Marty, O Pitaval, M Canut, B

Citation: F. Sanchez-almazan et al., Growth of GalnTlAs layers on InP by molecular beam epitaxy, J VAC SCI A, 19(3), 2001, pp. 861-870

InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m

Authors: Seassal, C Rojo-Romeo, P Letartre, X Viktorovitch, P Hollinger, G Jalaguier, E Pocas, S Aspar, B

Citation: C. Seassal et al., InP microdisk lasers on silicon wafer: CW room temperature operation at 1.6 mu m, ELECTR LETT, 37(4), 2001, pp. 222-223

InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m

Authors: Monat, C Seassal, C Letartre, X Viktorovitch, P Regreny, P Gendry, M Rojo-Romeo, P Hollinger, G Jalaguier, E Pocas, S Aspar, B

Citation: C. Monat et al., InP 2D photonic crystal microlasers on silicon wafer: room temperature operation at 1.55 mu m, ELECTR LETT, 37(12), 2001, pp. 764-766

Strained InAs nanostructures self-organised on high-index InP(113)B

Authors: Brault, J Gendry, M Grenet, G Solere, A Phaner-Goutorbe, M Robach, Y Porte, L Hollinger, G

Citation: J. Brault et al., Strained InAs nanostructures self-organised on high-index InP(113)B, APPL SURF S, 166(1-4), 2000, pp. 326-331

Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)

Authors: Brault, J Gendry, M Marty, O Pitaval, M Olivares, J Grenet, G Hollinger, G

Citation: J. Brault et al., Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001), APPL SURF S, 162, 2000, pp. 584-589

Three-dimensional stress criteria - Summary of the PVRC project

Authors: Hollinger, G Hechmer, J

Citation: G. Hollinger et J. Hechmer, Three-dimensional stress criteria - Summary of the PVRC project, J PRES VESS, 122(1), 2000, pp. 105-109

Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials

Authors: Damlencourt, JF Leclercq, JL Gendry, M Garrigues, M Aberkane, N Hollinger, G

Citation: Jf. Damlencourt et al., Paramorphic growth: A new approach in mismatched heteroepitaxy to prepare fully relaxed materials, JPN J A P 2, 38(9AB), 1999, pp. L996-L999

Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

Authors: Lapeyrade, M Besland, MP Meva'a, C Sibai, A Hollinger, G

Citation: M. Lapeyrade et al., Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition, J VAC SCI A, 17(2), 1999, pp. 433-444

Highly strained InxGa1-xGaAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 mu m spectral range

Authors: Jourba, S Gendry, I Regreny, P Hollinger, G

Citation: S. Jourba et al., Highly strained InxGa1-xGaAs/InP quantum wells grown by solid source MBE for applications in the 2-2.3 mu m spectral range, J CRYST GR, 202, 1999, pp. 1101-1104

Alloying effects in self-assembled InAs InP dots

Authors: Brault, J Gendry, M Grenet, G Hollinger, G Desieres, Y Benyattou, T

Citation: J. Brault et al., Alloying effects in self-assembled InAs InP dots, J CRYST GR, 202, 1999, pp. 1176-1179

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

Authors: Damlencourt, JF Leclercq, JL Gendry, M Regreny, P Hollinger, G

Citation: Jf. Damlencourt et al., High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach, APPL PHYS L, 75(23), 1999, pp. 3638-3640

High-quality highly strained InGaAs quantum wells grown on InP using (InAs)(n)(GaAs)(0.25) fractional monolayer superlattices

Authors: Jourba, S Gendry, M Marty, O Pitaval, M Hollinger, G

Citation: S. Jourba et al., High-quality highly strained InGaAs quantum wells grown on InP using (InAs)(n)(GaAs)(0.25) fractional monolayer superlattices, APPL PHYS L, 75(2), 1999, pp. 220-222

Risultati: 1-13 |