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Results: 1-25/102
Authors:
Strassburg, M
Schulz, O
Pohl, UW
Bimberg, D
Itoh, S
Nakano, K
Ishibashi, A
Klude, M
Hommel, D
Citation: M. Strassburg et al., A novel approach for improved green-emitting II-VI lasers, IEEE S T QU, 7(2), 2001, pp. 371-375
Authors:
Lawniczak-Jablonska, K
Iwanowski, RJ
Demchenko, IN
Boettcher, T
Einfeldt, S
Hommel, D
Cortes, R
Perera, RCC
Citation: K. Lawniczak-jablonska et al., Polarization dependent X-ray absorption studies of the chemical bonds anisotropy in wurtzite GaN grown at different conditions, J ALLOY COM, 328(1-2), 2001, pp. 77-83
Authors:
Kasic, A
Schubert, M
Rheinlander, B
Riede, V
Einfeldt, S
Hommel, D
Kuhn, B
Off, J
Scholz, F
Citation: A. Kasic et al., Effective carrier mass and mobility versus carrier concentration in p- andn-type alpha-GaN determined by infrared ellipsometry and Hall resistivity measurements, MAT SCI E B, 82(1-3), 2001, pp. 74-76
Authors:
Schubert, M
Kasic, A
Sik, J
Einfeldt, S
Hommel, D
Harle, V
Off, J
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in strained hexagonal GaN/AlGaN superlattices measured by infrared ellipsometry and Raman spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 178-181
Authors:
Passow, T
Leonardi, K
Hommel, D
Citation: T. Passow et al., Optical and structural properties of CdSe/Zn(S)Se quantum dot stacks, PHYS ST S-B, 224(1), 2001, pp. 143-146
Authors:
Seufert, J
Obert, M
Wigand, R
Kummell, T
Bacher, G
Forchel, A
Leonardi, K
Hommel, D
Citation: J. Seufert et al., Correlated temporal fluctuations and random intermittency of optical transitions in a single quantum dot, PHYS ST S-B, 224(1), 2001, pp. 201-205
Authors:
Vehse, M
Michler, P
Gutowski, J
Figge, S
Hommel, D
Selke, H
Keller, S
DenBaars, SP
Citation: M. Vehse et al., Influence of composition and well-width fluctuations on optical gain in (In, Ga)N multiple quantum wells, SEMIC SCI T, 16(5), 2001, pp. 406-412
Authors:
Davies, JJ
Wolverson, D
Strauf, S
Michler, P
Gutowski, J
Klude, M
Ohkawa, K
Hommel, D
Tournie, E
Faurie, JP
Citation: Jj. Davies et al., Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe - art. no. 205206, PHYS REV B, 6420(20), 2001, pp. 5206
Authors:
Passow, T
Heinke, H
Schmidt, T
Falta, J
Stockmann, A
Selke, H
Ryder, PL
Leonardi, K
Hommel, D
Citation: T. Passow et al., Segregation-enhanced etching of Cd during Zn deposition on CdSe quantum dots - art. no. 193311, PHYS REV B, 6419(19), 2001, pp. 3311
Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots - art. no. 121303
Authors:
Seufert, J
Obert, M
Bacher, G
Forchel, A
Passow, T
Leonardi, K
Hommel, D
Citation: J. Seufert et al., Tunneling of zero-dimensional excitons in a single pair of correlated quantum dots - art. no. 121303, PHYS REV B, 6412(12), 2001, pp. 1303
Authors:
Marbach, K
Ittermann, B
Fullgrabe, M
Heemeier, M
Kroll, F
Mai, F
Meier, P
Peters, D
Thiess, H
Ackermann, H
Stockmann, HJ
Zeitz, WD
Wenisch, H
Hommel, D
Landwehr, G
Citation: K. Marbach et al., Defect properties of ion-implanted nitrogen in ZnSe - art. no. 241201, PHYS REV B, 6324(24), 2001, pp. 1201
Authors:
Wagner, HP
Kuhnelt, M
Wenisch, H
Hommel, D
Citation: Hp. Wagner et al., Determination of band offset using continuous-wave two-photon excitation in a ZnSe quantum-well waveguide structure - art. no. 235319, PHYS REV B, 6323(23), 2001, pp. 5319
Authors:
Woggon, U
Luthgens, E
Wenisch, H
Hommel, D
Citation: U. Woggon et al., Probing the electron-LO-phonon interaction of a single impurity state in asemiconductor - art. no. 073205, PHYS REV B, 6307(7), 2001, pp. 3205
Authors:
Heinke, H
Kirchner, V
Selke, H
Chierchia, R
Ebel, R
Einfeldt, S
Hommel, D
Citation: H. Heinke et al., X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence, J PHYS D, 34(10A), 2001, pp. A25-A29
Authors:
Gardon, J
Heraud, JM
Laventure, S
Ladam, A
Capot, P
Fouquet, E
Favre, J
Weber, S
Hommel, D
Hulin, A
Couratte, Y
Talarmin, A
Citation: J. Gardon et al., Suburban transmission of Q fever in French Guiana: Evidence of a wild reservoir, J INFEC DIS, 184(3), 2001, pp. 278-284
Authors:
Ariey, F
Hommel, D
Le Scanf, C
Duchemin, JB
Peneau, C
Hulin, A
Sarthou, JL
Reynes, JM
Fandeur, T
Mercereau-Puijalon, O
Citation: F. Ariey et al., Association of severe malaria with a specific Plasmodium falciparum genotype in French Guiana, J INFEC DIS, 184(2), 2001, pp. 237-241
Authors:
Einfeldt, S
Bottcher, T
Figge, S
Hommel, D
Citation: S. Einfeldt et al., Thermally induced stress in GaN layers with regard to film coalescence, J CRYST GR, 230(3-4), 2001, pp. 357-360
Authors:
Leonardi, K
Passow, T
Klude, M
Hommel, D
Citation: K. Leonardi et al., Growth of ZnCdSe quantum wells at low substrate temperatures using migration enhanced epitaxy, J CRYST GR, 227, 2001, pp. 650-654
Authors:
Kasic, A
Schubert, M
Kuhn, B
Scholz, F
Einfeldt, S
Hommel, D
Citation: A. Kasic et al., Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN, J APPL PHYS, 89(7), 2001, pp. 3720-3724
Authors:
Einfeldt, S
Heinke, H
Kirchner, V
Hommel, D
Citation: S. Einfeldt et al., Strain relaxation in AlGaN/GaN superlattices grown on GaN, J APPL PHYS, 89(4), 2001, pp. 2160-2167
Authors:
Klude, M
Passow, T
Kroger, R
Hommel, D
Citation: M. Klude et al., Electrically pumped lasing from CdSe quantum dots, ELECTR LETT, 37(18), 2001, pp. 1119-1120
Authors:
Seufert, J
Obert, M
Scheibner, M
Gippius, NA
Bacher, G
Forchel, A
Passow, T
Leonardi, K
Hommel, D
Citation: J. Seufert et al., Stark effect and polarizability in a single CdSe/ZnSe quantum dot, APPL PHYS L, 79(7), 2001, pp. 1033-1035
Authors:
Kruse, C
Einfeldt, S
Bottcher, T
Hommel, D
Citation: C. Kruse et al., In as a surfactant for the growth of GaN (0001) by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 79(21), 2001, pp. 3425-3427
Authors:
Klude, M
Hommel, D
Citation: M. Klude et D. Hommel, 560-nm-continuous wave laser emission from ZnSe-based laser diodes on GaAs, APPL PHYS L, 79(16), 2001, pp. 2523-2525
Authors:
Kruse, C
Einfeldt, S
Bottcher, T
Hommel, D
Rudloff, D
Christen, J
Citation: C. Kruse et al., Spatially modified layer properties related to the formation of gallium droplets on GaN(0001) surfaces during plasma-assisted molecular-beam epitaxy, APPL PHYS L, 78(24), 2001, pp. 3827-3829