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Chandra, GH
Hussain, OM
Uthanna, S
Naidu, BS
Citation: Gh. Chandra et al., Characterization of p-AgGa0.25In0.75Se2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions, MAT SCI E B, 86(1), 2001, pp. 60-63
Authors:
Chandra, GH
Hussain, OM
Uthanna, S
Naidu, BS
Citation: Gh. Chandra et al., Characteristics of Al/p-AgGa0.25In0.75Se2 polycrystalline thin film Schottky barrier diodes, PHYS SCR, 63(5), 2001, pp. 422-424
Authors:
Rao, GV
Chandra, GH
Hussain, OM
Uthanna, S
Naidu, BS
Citation: Gv. Rao et al., Characteristics of Al/p-Cu0.5Ag0.5InSe2 polycrystalline thin film Schottkybarrier diodes, CRYST RES T, 36(6), 2001, pp. 571-576
Authors:
Ramana, CV
Naidu, BS
Hussain, OM
Pinto, R
Citation: Cv. Ramana et al., Low-temperature growth of vanadium pentoxide thin films produced by pulsedlaser ablation, J PHYS D, 34(7), 2001, pp. L35-L38
Authors:
Ramana, CV
Hussain, OM
Naidu, BS
Julien, C
Citation: Cv. Ramana et al., Dielectric properties of Al vertical bar V2O5 vertical bar Al thin film sandwich structures, MAT SCI E B, 60(3), 1999, pp. 173-178