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Results: 1-11 |
Results: 11
A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories
Authors: Ielmini, D Spinelli, AS Lacaita, AL Modelli, A
Citation: D. Ielmini et al., A new two-trap tunneling model for the anomalous stress-induced leakage current (SILC) in Flash memories, MICROEL ENG, 59(1-4), 2001, pp. 189-195
A recombination- and trap-assisted tunneling model for stress-induced leakage current
Authors: Ielmini, D Spinelli, AS Lacaita, AL Martinelli, A Ghidini, G
Citation: D. Ielmini et al., A recombination- and trap-assisted tunneling model for stress-induced leakage current, SOL ST ELEC, 45(8), 2001, pp. 1361-1369
Different types of defects in silicon dioxide characterized by their transient behavior
Authors: Ielmini, D Spinelli, AS Beretta, M Lacaita, AL
Citation: D. Ielmini et al., Different types of defects in silicon dioxide characterized by their transient behavior, J APPL PHYS, 89(7), 2001, pp. 4189-4191
A detailed investigation of the quantum yield experiment
Authors: Ielmini, D Spinelli, AS Lacaita, AL DiMaria, DJ Ghidini, G
Citation: D. Ielmini et al., A detailed investigation of the quantum yield experiment, IEEE DEVICE, 48(8), 2001, pp. 1696-1702
A recombination model for transient and stationary stress-induced leakage current
Authors: Ielmini, D Spinelli, AS Lacaita, AL Martinelli, A Ghidini, G
Citation: D. Ielmini et al., A recombination model for transient and stationary stress-induced leakage current, MICROEL REL, 40(4-5), 2000, pp. 703-706
Modeling of SILC based on electron and hole tunneling - Part I: Transient effects
Authors: Ielmini, D Spinelli, AS Rigamonti, MA Lacaita, AL
Citation: D. Ielmini et al., Modeling of SILC based on electron and hole tunneling - Part I: Transient effects, IEEE DEVICE, 47(6), 2000, pp. 1258-1265
Modeling of SILC based on electron and hole tunneling - Part II: Steady-state
Authors: Ielmini, D Spinelli, AS Rigamonti, MA Lacaita, AL
Citation: D. Ielmini et al., Modeling of SILC based on electron and hole tunneling - Part II: Steady-state, IEEE DEVICE, 47(6), 2000, pp. 1266-1272
Experimental evidence for recombination-assisted leakage in thin oxides
Authors: Ielmini, D Spinelli, AS Lacaita, AL
Citation: D. Ielmini et al., Experimental evidence for recombination-assisted leakage in thin oxides, APPL PHYS L, 76(13), 2000, pp. 1719-1721
Separation of electron and hole traps by transient current analysis
Authors: Spinelli, AS Lacaita, AL Rigamonti, M Ielmini, D Ghidini, G
Citation: As. Spinelli et al., Separation of electron and hole traps by transient current analysis, MICROEL ENG, 48(1-4), 1999, pp. 151-154
Picosecond time-resolved luminescence studies of recombination processes in CdTe
Authors: Ghislotti, G Ielmini, D Riedo, E Martinelli, M Dellagiovanna, M
Citation: G. Ghislotti et al., Picosecond time-resolved luminescence studies of recombination processes in CdTe, SOL ST COMM, 111(4), 1999, pp. 211-216
Intersubband relaxation time for InxGa1-xAs/AlAs quantum wells with large transition energy
Authors: Ghislotti, G Riedo, E Ielmini, D Martinelli, M
Citation: G. Ghislotti et al., Intersubband relaxation time for InxGa1-xAs/AlAs quantum wells with large transition energy, APPL PHYS L, 75(23), 1999, pp. 3626-3628
Risultati: 1-11 |