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Results: 1-25 | 26-29
Results: 1-25/29
NICKEL FILM ON (001)SIC - THERMALLY-INDUCED REACTIONS
Authors: BACHLI A NICOLET MA BAUD L JAUSSAUD C MADAR R
Citation: A. Bachli et al., NICKEL FILM ON (001)SIC - THERMALLY-INDUCED REACTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 11-23
SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN BETA-SIC(100) SURFACES - GROWTH AND MORPHOLOGY
Authors: SEMOND F DOUILLARD L SOUKIASSIAN P MAYNE A DUJARDIN G DICIOCCIO L JAUSSAUD C
Citation: F. Semond et al., SCANNING-TUNNELING-MICROSCOPY STUDY OF SINGLE-DOMAIN BETA-SIC(100) SURFACES - GROWTH AND MORPHOLOGY, Surface review and letters, 5(1), 1998, pp. 207-211
LOW-FREQUENCY NOISE IN SILICON-CARBIDE SCHOTTKY DIODES
Authors: ANGHEL L OUISSE T BILLON T LASSAGNE P JAUSSAUD C
Citation: L. Anghel et al., LOW-FREQUENCY NOISE IN SILICON-CARBIDE SCHOTTKY DIODES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1494-1496
SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS
Authors: DICIOCCIO L LETERTRE F LETIEC Y PAPON AM JAUSSAUD C BRUEL M
Citation: L. Dicioccio et al., SILICON-CARBIDE ON INSULATOR FORMATION BY THE SMART-CUT(R) PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 349-356
ELECTRICAL CHARACTERIZATION OF EPITAXIAL 6H-SIC BY ADMITTANCE SPECTROSCOPY
Authors: RAYNAUD C DUCROQUET F BROUNKOV PN GUILLOT G PORTER LM DAVIS RF JAUSSAUD C BILLON T
Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF EPITAXIAL 6H-SIC BY ADMITTANCE SPECTROSCOPY, Materials science and technology, 12(1), 1996, pp. 94-97
SYNCHROTRON-RADIATION STUDY OF CS CARBON-RICH BETA-SIC(100) AND CS/SILICON-RICH BETA-SIC(100) SURFACES - METALLIZATION AND INTERFACE FORMATION/
Authors: SEMOND F SOUKIASSIAN P MANGAT PS HURYCH Z DICIOCCIO L JAUSSAUD C
Citation: F. Semond et al., SYNCHROTRON-RADIATION STUDY OF CS CARBON-RICH BETA-SIC(100) AND CS/SILICON-RICH BETA-SIC(100) SURFACES - METALLIZATION AND INTERFACE FORMATION/, Applied surface science, 104, 1996, pp. 79-87
ATOMIC-STRUCTURE OF THE BETA-SIC(100)-(3X2) SURFACE
Authors: SEMOND F SOUKIASSIAN P MAYNE A DUJARDIN G DOUILLARD L JAUSSAUD C
Citation: F. Semond et al., ATOMIC-STRUCTURE OF THE BETA-SIC(100)-(3X2) SURFACE, Physical review letters, 77(10), 1996, pp. 2013-2016
SILICON-CARBIDE ON INSULATOR FORMATION USING THE SMART CUT PROCESS
Authors: DICIOCCIO L LETIEC Y LETERTRE F JAUSSAUD C BRUEL M
Citation: L. Dicioccio et al., SILICON-CARBIDE ON INSULATOR FORMATION USING THE SMART CUT PROCESS, Electronics Letters, 32(12), 1996, pp. 1144-1145
ELECTRICAL CHARACTERIZATION OF SIC FOR HIGH-TEMPERATURE THERMAL-SENSOR APPLICATIONS
Authors: DEZAUZIER C BECOURT N ARNAUD G CONTRERAS S PONTHENIER PL CAMASSEL J ROBERT JL PASCUAL J JAUSSAUD C
Citation: C. Dezauzier et al., ELECTRICAL CHARACTERIZATION OF SIC FOR HIGH-TEMPERATURE THERMAL-SENSOR APPLICATIONS, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 71-75
STUDY OF SIC SINGLE-CRYSTAL SUBLIMATION GROWTH-CONDITIONS
Authors: GARCON I ROUAULT A ANIKIN M JAUSSAUD C MADAR R
Citation: I. Garcon et al., STUDY OF SIC SINGLE-CRYSTAL SUBLIMATION GROWTH-CONDITIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 90-93
DETERMINATION OF DONOR AND ACCEPTOR LEVEL ENERGIES BY ADMITTANCE SPECTROSCOPY IN 6H SIC
Authors: RAYNAUD C RICHIER C BROUNKOV PN DUCROQUET F GUILLOT G PORTER LM DAVIS RF JAUSSAUD C BILLON T
Citation: C. Raynaud et al., DETERMINATION OF DONOR AND ACCEPTOR LEVEL ENERGIES BY ADMITTANCE SPECTROSCOPY IN 6H SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 122-125
INTERFACIAL REACTIONS OF W THIN-FILM ON SINGLE-CRYSTAL (001)BETA-SIC
Authors: BAUD L JAUSSAUD C MADAR R BERNARD C CHEN JS NICOLET MA
Citation: L. Baud et al., INTERFACIAL REACTIONS OF W THIN-FILM ON SINGLE-CRYSTAL (001)BETA-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 126-130
UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE
Authors: KARMANN S DICIOCCIO L BLANCHARD B OUISSE T MUYARD D JAUSSAUD C
Citation: S. Karmann et al., UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 134-137
CONTACT RESISTIVITY OF RE, PT AND TA FILMS ON N-TYPE BETA-SIC - PRELIMINARY-RESULTS
Authors: CHEN JS BACHLI A NICOLET MA BAUD L JAUSSAUD C MADAR R
Citation: Js. Chen et al., CONTACT RESISTIVITY OF RE, PT AND TA FILMS ON N-TYPE BETA-SIC - PRELIMINARY-RESULTS, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 185-189
ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/
Authors: BILLON T BANO E DICIOCCIO L OUISSE T LASSAGNE P JAUSSAUD C
Citation: T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196
DIRECT AND RB-PROMOTED SIOX BETA-SIC(100) INTERFACE FORMATION/
Authors: RIEHLCHUDOBA M SOUKIASSIAN P JAUSSAUD C DUPONT S
Citation: M. Riehlchudoba et al., DIRECT AND RB-PROMOTED SIOX BETA-SIC(100) INTERFACE FORMATION/, Physical review. B, Condensed matter, 51(20), 1995, pp. 14300-14310
IONIC CONTAMINATION IN METAL-OXIDE-SEMICONDUCTOR AL SIO2/3C-SIC CAPACITORS/
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BECOURT N JAUSSAUD C
Citation: C. Raynaud et al., IONIC CONTAMINATION IN METAL-OXIDE-SEMICONDUCTOR AL SIO2/3C-SIC CAPACITORS/, Journal of the Electrochemical Society, 142(1), 1995, pp. 282-285
COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES
Authors: RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BECOURT N BILLON T JAUSSAUD C
Citation: C. Raynaud et al., COMPARISON OF TRAPPING-DETRAPPING PROPERTIES OF MOBILE CHARGE IN ALKALI CONTAMINATED METAL-OXIDE-SILICON CARBIDE STRUCTURES, Applied physics letters, 66(18), 1995, pp. 2340-2342
CHARACTERIZATION OF ULTRASHALLOW P+ PROFILES BY SPREADING RESISTANCE MEASUREMENTS
Authors: MINONDO M ROCHE D JAUSSAUD C
Citation: M. Minondo et al., CHARACTERIZATION OF ULTRASHALLOW P+ PROFILES BY SPREADING RESISTANCE MEASUREMENTS, JPN J A P 1, 33(5A), 1994, pp. 2439-2443
INSTABILITIES IN 6H-SIC MOS STRUCTURES
Authors: RAYNAUD C AUTRQAN JL SEIGNEUR F JAUSSAUD C BILLON T GUILLOT G BALLAND B
Citation: C. Raynaud et al., INSTABILITIES IN 6H-SIC MOS STRUCTURES, Journal de physique. III, 4(5), 1994, pp. 937-952
SIMOX TECHNOLOGY - FROM BASIC RESEARCH TO INDUSTRIAL DEVELOPMENTS
Authors: JAUSSAUD C MARGAIL J LAMURE JM BRUEL M
Citation: C. Jaussaud et al., SIMOX TECHNOLOGY - FROM BASIC RESEARCH TO INDUSTRIAL DEVELOPMENTS, Radiation effects and defects in solids, 127(3-4), 1994, pp. 319-326
SOLID-STATE REACTION OF PT THIN-FILM WITH SINGLE-CRYSTAL (001) BETA-SIC
Authors: CHEN JS KOLAWA E NICOLET MA RUIZ RP BAUD L JAUSSAUD C MADAR R
Citation: Js. Chen et al., SOLID-STATE REACTION OF PT THIN-FILM WITH SINGLE-CRYSTAL (001) BETA-SIC, Journal of materials research, 9(3), 1994, pp. 648-657
REACTION OF TA THIN-FILM WITH SINGLE-CRYSTALLINE (001) BETA-SIC
Authors: CHEN JS KOLAWA E NICOLET MA RUIZ RP BAUD L JAUSSAUD C MADAR R
Citation: Js. Chen et al., REACTION OF TA THIN-FILM WITH SINGLE-CRYSTALLINE (001) BETA-SIC, Journal of applied physics, 76(4), 1994, pp. 2169-2175
PROMOTION OF THE OXIDATION OF SILICON-CARBIDE BY A RUBIDIUM OVERLAYER
Authors: RIEHLCHUDOBA M SOUKIASSIAN P JAUSSAUD C
Citation: M. Riehlchudoba et al., PROMOTION OF THE OXIDATION OF SILICON-CARBIDE BY A RUBIDIUM OVERLAYER, Journal of applied physics, 76(3), 1994, pp. 1932-1934
ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS
Authors: RAYNAUD C AUTRAN JL BALLAND B GUILLOT G JAUSSAUD C BILLON T
Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF INSTABILITIES IN 6H SILICON-CARBIDE METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 76(2), 1994, pp. 993-997
Risultati: 1-25 | 26-29