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Results: 26-50/51
Authors:
Shin, E
Li, J
Lin, JY
Jiang, HX
Citation: E. Shin et al., Barrier-width dependence of quantum efficiencies of GaN/AlxGa1-xN multiplequantum wells, APPL PHYS L, 77(8), 2000, pp. 1170-1172
Authors:
Oder, TN
Li, J
Lin, JY
Jiang, HX
Citation: Tn. Oder et al., Photoresponsivity of ultraviolet detectors based on InxAlyGa1-x-yN quaternary alloys, APPL PHYS L, 77(6), 2000, pp. 791-793
Authors:
Aumer, ME
LeBoeuf, SF
Bedair, SM
Smith, M
Lin, JY
Jiang, HX
Citation: Me. Aumer et al., Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures, APPL PHYS L, 77(6), 2000, pp. 821-823
Authors:
Li, JZ
Lin, JY
Jiang, HX
Sullivan, GJ
Citation: Jz. Li et al., Transient characteristics of AlxGa1-xN/GaN heterojunction field-effect transistors, APPL PHYS L, 77(24), 2000, pp. 4046-4048
Authors:
Jin, SX
Li, J
Lin, JY
Jiang, HX
Citation: Sx. Jin et al., InGaN/GaN quantum well interconnected microdisk light emitting diodes, APPL PHYS L, 77(20), 2000, pp. 3236-3238
Authors:
Zeng, KC
Li, J
Lin, JY
Jiang, HX
Citation: Kc. Zeng et al., Optimizing growth conditions for GaN/AlxGa1-xN multiple quantum well structures, APPL PHYS L, 76(7), 2000, pp. 864-866
Authors:
Jin, SX
Li, J
Li, JZ
Lin, JY
Jiang, HX
Citation: Sx. Jin et al., GaN microdisk light emitting diodes, APPL PHYS L, 76(5), 2000, pp. 631-633
Authors:
Zeng, KC
Li, J
Lin, JY
Jiang, HX
Citation: Kc. Zeng et al., Well-width dependence of the quantum efficiencies of GaN/AlxGa1-xN multiple quantum wells, APPL PHYS L, 76(21), 2000, pp. 3040-3042
Authors:
Tsen, KT
Koch, C
Chen, Y
Morkoc, H
Li, J
Lin, JY
Jiang, HX
Citation: Kt. Tsen et al., Observation of electronic Raman scattering from Mg-doped wurtzite GaN, APPL PHYS L, 76(20), 2000, pp. 2889-2891
Authors:
Mair, RA
Lin, JY
Jiang, HX
Jones, ED
Allerman, AA
Kurtz, SR
Citation: Ra. Mair et al., Time-resolved photoluminescence studies of InxGa1-xAs1-yNy, APPL PHYS L, 76(2), 2000, pp. 188-190
Authors:
Zeng, KC
Lin, JY
Jiang, HX
Citation: Kc. Zeng et al., Effects of alloy disorder on the transport properties of AlxGa1-xN epilayers probed by persistent photoconductivity, APPL PHYS L, 76(13), 2000, pp. 1728-1730
Authors:
Kim, HS
Mair, RA
Li, J
Lin, JY
Jiang, HX
Citation: Hs. Kim et al., Time-resolved photoluminescence studies of AlxGa1-xN alloys, APPL PHYS L, 76(10), 2000, pp. 1252-1254
Authors:
Mathur, SP
Lee, JH
Jiang, HX
Arnaud, P
Rust, PF
Citation: Sp. Mathur et al., Levels of transferrin and alpha 2-HS glycoprotein in women with and without endometriosis, AUTOIMMUN, 29(2), 1999, pp. 121-127
Authors:
Morkoc, H
Cingolani, R
Lambrecht, W
Gil, B
Pavlidis, D
Jiang, HX
Lin, J
Citation: H. Morkoc et al., Spontaneous polarization and piezoelectric field in nitride semiconductor heterostructures, J KOR PHYS, 34, 1999, pp. S224-S233
Authors:
Gu, CX
Liao, GY
Jiang, HX
Li, J
Shan, LY
Citation: Cx. Gu et al., Nonlinear programming and scientific computing visualization in the optimization design of electron optical system, NUCL INST A, 427(1-2), 1999, pp. 321-328
Authors:
Yu, LS
Qiao, D
Lau, SS
Redwing, JM
Lin, JY
Jiang, HX
Citation: Ls. Yu et al., Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method, J APPL PHYS, 86(5), 1999, pp. 2696-2699
Authors:
Jiang, HX
Lin, JY
Zeng, KC
Yang, W
Citation: Hx. Jiang et al., Optical resonance modes in GaN pyramid microcavities, APPL PHYS L, 75(6), 1999, pp. 763-765
Authors:
Zavada, JM
Mair, RA
Ellis, CJ
Lin, JY
Jiang, HX
Wilson, RG
Grudowski, PA
Dupuis, RD
Citation: Jm. Zavada et al., Optical transitions in Pr-implanted GaN, APPL PHYS L, 75(6), 1999, pp. 790-792
Authors:
Manasreh, MO
Baranowski, JM
Pakula, K
Jiang, HX
Lin, JY
Citation: Mo. Manasreh et al., Localized vibrational modes of carbon-hydrogen complexes in GaN, APPL PHYS L, 75(5), 1999, pp. 659-661
Authors:
Zeng, KC
Dai, L
Lin, JY
Jiang, HX
Citation: Kc. Zeng et al., Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities, APPL PHYS L, 75(17), 1999, pp. 2563-2565
Authors:
Li, JZ
Lin, JY
Jiang, HX
Geisz, JF
Kurtz, SR
Citation: Jz. Li et al., Persistent photoconductivity in Ga1-xInxNyAs1-y, APPL PHYS L, 75(13), 1999, pp. 1899-1901
Authors:
Zeng, KC
Lin, JY
Jiang, HX
Yang, W
Citation: Kc. Zeng et al., Optical properties of GaN pyramids, APPL PHYS L, 74(9), 1999, pp. 1227-1229
Authors:
Jiang, HX
Lin, JY
Citation: Hx. Jiang et Jy. Lin, Mode spacing "anomaly" in InGaN blue lasers, APPL PHYS L, 74(8), 1999, pp. 1066-1068
Authors:
Mair, RA
Li, J
Duan, SK
Lin, JY
Jiang, HX
Citation: Ra. Mair et al., Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN, APPL PHYS L, 74(4), 1999, pp. 513-515
Authors:
Zeng, KC
Lin, JY
Jiang, HX
Yang, W
Citation: Kc. Zeng et al., Optical properties of a high-quality insulating GaN epilayer, APPL PHYS L, 74(25), 1999, pp. 3821-3823