AAAAAA
Results:
1-15
|
Results: 15
Authors:
HADJIISKI L
MUNSTER S
OESTERSCHULZE E
KASSING R
Citation: L. Hadjiiski et al., NEURAL-NETWORK CORRECTION OF NONLINEARITIES IN SCANNING PROBE MICROSCOPE IMAGES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1563-1568
Authors:
BECKER F
RANGELOW IW
KASSING R
Citation: F. Becker et al., ION ENERGY-DISTRIBUTIONS IN SF6 PLASMAS AT A RADIOFREQUENCY POWERED ELECTRODE, Journal of applied physics, 80(1), 1996, pp. 56-65
Authors:
MIHALCEA C
SCHOLZ W
WERNER S
MUNSTER S
OESTERSCHULZE E
KASSING R
Citation: C. Mihalcea et al., MULTIPURPOSE SENSOR TIPS FOR SCANNING NEAR-FIELD MICROSCOPY, Applied physics letters, 68(25), 1996, pp. 3531-3533
Authors:
STOPKA M
HADJIISKI L
OESTERSCHULZE E
KASSING R
Citation: M. Stopka et al., SURFACE INVESTIGATIONS BY SCANNING THERMAL MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2153-2156
Authors:
REINKE S
KUHR M
KULISCH W
KASSING R
Citation: S. Reinke et al., RECENT RESULTS IN CUBIC BORON-NITRIDE DEPOSITION IN LIGHT OF THE SPUTTER MODEL, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 272-283
Authors:
BECKER F
RANGELOW IW
MASSELI K
KASSING R
Citation: F. Becker et al., DIAGNOSTIC ON N-2 PLASMA WITH AN ENERGY-RESOLVED QUADRUPOLE MASS-SPECTROMETER AT THE POWERED ELECTRODE IN A REACTIVE ION ETCHING SYSTEM - ION ENERGY-DISTRIBUTION OF N-2(+) AND N+, Surface & coatings technology, 74-5(1-3), 1995, pp. 485-490
Authors:
HADJIISKI L
LINNEMANN R
STOPKA M
OESTERSCHULZE E
RANGELOW I
KASSING R
Citation: L. Hadjiiski et al., APPLICATION OF NEURAL NETWORKS TO A SCANNING PROBE MICROSCOPY SYSTEM, Thin solid films, 264(2), 1995, pp. 291-297
Authors:
SUDJADI U
WEISS S
BOCK A
KASSING R
Citation: U. Sudjadi et al., INVESTIGATION OF A PD-AU COMPLEX IN N-TYPE SILICON WITH DLTFS TECHNIQUES, Physica status solidi. a, Applied research, 149(2), 1995, pp. 649-658
Authors:
SPIKA Z
ZIMMERMANN G
STOLZ W
GOBEL EO
GIMMNICH P
LORBERTH J
GREILING A
SALZMANN A
WEISS S
SUDJADI U
BOCK A
KASSING R
Citation: Z. Spika et al., INVESTIGATIONS ON DEEP TRAPS IN GAAS AND (ALXGA1-X)AS BULK LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY USING THE NEW ALTERNATIVE ARSENIC PRECURSOR DIETHYL-TERT-BUTYLARSIN, Journal of crystal growth, 146(1-4), 1995, pp. 521-526
Authors:
STOPKA M
OESTERSCHULZE E
SCHULTE J
KASSING R
Citation: M. Stopka et al., PHOTOTHERMAL SCANNING NEAR-FIELD MICROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 226-228
Authors:
OESTERSCHULZE E
STOPKA M
KASSING R
Citation: E. Oesterschulze et al., PHOTOTHERMAL CHARACTERIZATION OF SOLIDS AND THIN-FILMS BY OPTICAL ANDSCANNING PROBE TECHNIQUES, Microelectronic engineering, 24(1-4), 1994, pp. 107-112
Authors:
BECKMANN R
REINKE S
KUHR M
KULISCH W
KASSING R
Citation: R. Beckmann et al., INVESTIGATION OF GAS-PHASE MECHANISMS DURING DEPOSITION OF DIAMOND FILMS, Surface & coatings technology, 60(1-3), 1993, pp. 506-510
Authors:
OESTERSCHULZE E
STOPKA M
TOCHTROPMAYR M
MASSELI K
KASSING R
Citation: E. Oesterschulze et al., NONDESTRUCTIVE EVALUATION OF SOLIDS AND DEPOSITED FILMS BY THERMAL-WAVE INTERFEROMETRY, Applied surface science, 69(1-4), 1993, pp. 65-68
Authors:
HUDEK P
BORKOWICZ Z
KOSTIC I
RANGELOW IW
KASSING R
Citation: P. Hudek et al., SINGLE-LAYER RESIST FOR DEEP, MICROMETER AND NANOMETER STRUCTURE TRANSFER, Microelectronic engineering, 21(1-4), 1993, pp. 283-288
Authors:
RANGELOW IW
LAHR V
KASSING R
BLASINGBANGERT C
ROTH KD
BOSCH G
CHALUPKA A
FISCHER R
LOSCHNER H
NOWAK R
TRAHER C
STENGL G
KRAUS H
BAYER E
Citation: Iw. Rangelow et al., DISTORTION EVALUATION OF NICKEL STENCIL MASKS WITH THE HELP OF ION PROXIMITY EXPOSURES AND REGISTRATION MEASUREMENTS ON THE LEITZ LMS-2000, Microelectronic engineering, 21(1-4), 1993, pp. 359-362
Risultati:
1-15
|