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Results: 1-25/31
Authors:
TSUGAWA K
NODA H
HOKAZONO A
KITATANI K
MORITA K
KAWARADA H
Citation: K. Tsugawa et al., APPLICATION AND DEVICE MODELING OF DIAMOND FET USING SURFACE SEMICONDUCTIVE LAYERS, Electronics & communications in Japan. Part 2, Electronics, 81(7), 1998, pp. 19-27
Authors:
SHIKINAMI Y
KAWARADA H
Citation: Y. Shikinami et H. Kawarada, POTENTIAL APPLICATION OF A TRIAXIAL 3-DIMENSIONAL FABRIC (3-DF) AS ANIMPLANT, Biomaterials, 19(7-9), 1998, pp. 617-635
Authors:
KAWARADA H
WILD C
HERRES N
KOIDL P
MIZUOCHI Y
HOKAZONO A
NAGASAWA H
Citation: H. Kawarada et al., SURFACE-MORPHOLOGY AND SURFACE P-CHANNEL FIELD-EFFECT TRANSISTOR ON THE HETEROEPITAXIAL DIAMOND DEPOSITED ON INCLINED BETA-SIC(001) SURFACES, Applied physics letters, 72(15), 1998, pp. 1878-1880
Authors:
HOKAZONO A
KAWARADA H
Citation: A. Hokazono et H. Kawarada, ENHANCEMENT DEPLETION SURFACE CHANNEL FIELD-EFFECT TRANSISTORS OF DIAMOND AND THEIR LOGIC-CIRCUITS/, JPN J A P 1, 36(12A), 1997, pp. 7133-7139
Authors:
SATO M
ISHII M
YAMAMOTO Y
TAKAMATSU R
KAWARADA H
Citation: M. Sato et al., A REMOTE COLLABORATION SYSTEM USING HAND-FORCE VIRTUAL ENVIRONMENT, Electronics and communications in Japan. Part 3, Fundamental electronic science, 80(4), 1997, pp. 51-59
Authors:
NODA H
HOKAZONO A
KAWARADA H
Citation: H. Noda et al., DEVICE MODELING OF HIGH-PERFORMANCE DIAMOND MESFETS USING P-TYPE SURFACE SEMICONDUCTIVE LAYERS, DIAMOND AND RELATED MATERIALS, 6(5-7), 1997, pp. 865-868
Authors:
MIZUOCHI Y
NAGASAWA H
KAWARADA H
Citation: Y. Mizuochi et al., SURFACE CHARACTERIZATION OF SMOOTH HETEROEPITAXIAL DIAMOND LAYERS ON BETA-SIC(001), DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 277-281
Authors:
HOKAZONO A
ISHIKURA T
NAKAMURA K
YAMASHITA S
KAWARADA H
Citation: A. Hokazono et al., ENHANCEMENT DEPLETION MESFETS OF DIAMOND AND THEIR LOGIC-CIRCUITS/, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 339-343
COMPARATIVE-STUDY OF EXCITONIC RECOMBINATION RADIATION FROM DIAMONDS GROWN BY CVD AND HP HT METHODS/
Authors:
MURAKAMI T
NAKAMURA K
YAMASHITA S
TAKEUCHI S
MURAKAWA M
KAWARADA H
Citation: T. Murakami et al., COMPARATIVE-STUDY OF EXCITONIC RECOMBINATION RADIATION FROM DIAMONDS GROWN BY CVD AND HP HT METHODS/, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1668-1673
Authors:
TSUGAWA K
MORITA K
KAWARADA H
Citation: K. Tsugawa et al., DEVICE SIMULATIONS OF FIELD-EFFECT TRANSISTORS ON HYDROGEN-TERMINATEDDIAMOND SURFACES, Diamond films and technology, 7(5-6), 1997, pp. 354-354
MULTIRESOLUTION MODEL CONSTRUCTION FROM SCATTERED RANGE DATA BY HIERARCHICAL CUBE-BASED SEGMENTATION
Authors:
WANG SJ
SATO M
KAWARADA H
Citation: Sj. Wang et al., MULTIRESOLUTION MODEL CONSTRUCTION FROM SCATTERED RANGE DATA BY HIERARCHICAL CUBE-BASED SEGMENTATION, IEICE transactions on information and systems, E80D(8), 1997, pp. 780-787
Authors:
KAWARADA H
WILD C
HERRES N
LOCHER R
KOIDL P
NAGASAWA H
Citation: H. Kawarada et al., HETEROEPITAXIAL GROWTH OF HIGHLY ORIENTED DIAMOND ON CUBIC SILICON-CARBIDE, Journal of applied physics, 81(8), 1997, pp. 3490-3493
Authors:
WONG KW
LEE ST
KWOK RWM
LAM YW
KAWARADA H
Citation: Kw. Wong et al., ELECTRON-AFFINITY AND SURFACE REORDERING OF HOMOEPITAXIAL DIAMOND(100), JPN J A P 1, 35(10), 1996, pp. 5444-5447
Authors:
KAWARADA H
ITOH M
HOKAZONO A
Citation: H. Kawarada et al., ELECTRICALLY ISOLATED METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS AND LOGIC-CIRCUITS ON HOMOEPITAXIAL DIAMONDS, JPN J A P 2, 35(9B), 1996, pp. 1165-1168
Authors:
KAWARADA H
Citation: H. Kawarada, HYDROGEN-TERMINATED DIAMOND SURFACES AND INTERFACES, Surface science reports, 26(7), 1996, pp. 205-259
Authors:
ITOH M
KAWARADA H
Citation: M. Itoh et H. Kawarada, FABRICATION AND CHARACTERIZATION OF METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR UTILIZING DIAMOND SURFACE-CONDUCTIVE LAYER, JPN J A P 1, 34(9A), 1995, pp. 4677-4681
Authors:
SUESADA T
NAKAMURA N
NAGASAWA H
KAWARADA H
Citation: T. Suesada et al., INITIAL GROWTH OF HETEROEPITAXIAL DIAMOND ON SI(001) SUBSTRATES VIA BETA-SIC BUFFER LAYER, JPN J A P 1, 34(9A), 1995, pp. 4898-4904
Authors:
KATOH M
KAWARADA H
Citation: M. Katoh et H. Kawarada, HETEROEPITAXIAL GROWTH OF TUNGSTEN CARBIDE FILMS ON W(110) BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 34(7A), 1995, pp. 3628-3630
Authors:
KAWARADA H
SASAKI H
SATO A
Citation: H. Kawarada et al., SCANNING-TUNNELING-MICROSCOPE OBSERVATION OF THE HOMOEPITAXIAL DIAMOND(001) 2X1 RECONSTRUCTION OBSERVED UNDER ATMOSPHERIC-PRESSURE, Physical review. B, Condensed matter, 52(15), 1995, pp. 11351-11358
Authors:
LAWSON SC
KANDA H
KIYOTA H
TSUTSUMI T
KAWARADA H
Citation: Sc. Lawson et al., CATHODOLUMINESCENCE FROM HIGH-PRESSURE SYNTHETIC AND CHEMICAL-VAPOR-DEPOSITED DIAMOND, Journal of applied physics, 77(4), 1995, pp. 1729-1734
Authors:
SHINOZAWA T
KAWARADA H
TAKEZAKI K
TANAKA H
INOUE K
Citation: T. Shinozawa et al., PREPARATION OF MONOCLONAL-ANTIBODIES AGAINST PLANARIAN ORGANS AND THEEFFECT OF FIXATIVES, Hydrobiologia, 305(1-3), 1995, pp. 255-257
Authors:
KAWARADA H
SUESADA T
NAGASAWA H
Citation: H. Kawarada et al., HETEROEPITAXIAL GROWTH OF SMOOTH AND CONTINUOUS DIAMOND THIN FILMS ONSILICON SUBSTRATES VIA HIGH-QUALITY SILICON-CARBIDE BUFFER LAYERS, Applied physics letters, 66(5), 1995, pp. 583-585
Authors:
YAMAGUCHI A
YAMASHITA S
TSUTSUMI T
KAWARADA H
Citation: A. Yamaguchi et al., TEMPERATURE AND INCIDENT BEAM-CURRENT DEPENDENCE OF DOMINANT FREE-EXCITON RECOMBINATION RADIATION FROM HIGH-PURITY CHEMICAL-VAPOR-DEPOSITION (CVD) DIAMONDS, JPN J A P 2, 33(8A), 1994, pp. 120001063-120001065
Authors:
AOKI M
KAWARADA H
Citation: M. Aoki et H. Kawarada, ELECTRIC PROPERTIES OF METAL DIAMOND INTERFACES UTILIZING HYDROGEN-TERMINATED SURFACES OF HOMOEPITAXIAL DIAMONDS, JPN J A P 2, 33(5B), 1994, pp. 120000708-120000711
Authors:
KATOH M
AOKI M
KAWARADA H
Citation: M. Katoh et al., PLASMA-ENHANCED DIAMOND NUCLEATION ON SI, JPN J A P 2, 33(2A), 1994, pp. 120000194-120000196