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Results: 1-20 |
Results: 20
MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/
Authors: GARDNER JA EDWARDS A RAO MV PAPANICOLAOU N KELNER G HOLLAND OW CAPANO MA GHEZZO M KRETCHMER J
Citation: Ja. Gardner et al., MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/, Journal of applied physics, 83(10), 1998, pp. 5118-5124
ION-IMPLANTATION IN 6H-SIC
Authors: RAO MV NORDSTROM D GARDNER JA EDWARDS A ROTH EG KELNER G RIDGWAY M
Citation: Mv. Rao et al., ION-IMPLANTATION IN 6H-SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 655-659
GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS
Authors: BINARI SC DOVERSPIKE K KELNER G DIETRICH HB WICKENDEN AE
Citation: Sc. Binari et al., GAN FETS FOR MICROWAVE AND HIGH-TEMPERATURE APPLICATIONS, Solid-state electronics, 41(2), 1997, pp. 177-180
FABRICATION AND CHARACTERIZATION OF GAN FETS
Authors: BINARI SC KRUPPA W DIETRICH HB KELNER G WICKENDEN AE FREITAS JA
Citation: Sc. Binari et al., FABRICATION AND CHARACTERIZATION OF GAN FETS, Solid-state electronics, 41(10), 1997, pp. 1549-1554
COMPENSATION IMPLANTS IN 6H-SIC
Authors: EDWARDS A DWIGHT DN RAO MV RIDGWAY MC KELNER G PAPANICOLAOU N
Citation: A. Edwards et al., COMPENSATION IMPLANTS IN 6H-SIC, Journal of applied physics, 82(9), 1997, pp. 4223-4227
NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE
Authors: DWIGHT D RAO MV HOLLAND OW KELNER G CHI PH KRETCHMER J GHEZZO M
Citation: D. Dwight et al., NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE, Journal of applied physics, 82(11), 1997, pp. 5327-5333
PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC
Authors: RAO MV GARDNER JA CHI PH HOLLAND OW KELNER G KRETCHMER J GHEZZO M
Citation: Mv. Rao et al., PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC, Journal of applied physics, 81(10), 1997, pp. 6635-6641
ALGAN GAN HEMTS GROWN ON SIC SUBSTRATES
Authors: BINARI SC REDWING JM KELNER G KRUPPA W
Citation: Sc. Binari et al., ALGAN GAN HEMTS GROWN ON SIC SUBSTRATES, Electronics Letters, 33(3), 1997, pp. 242-243
ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC
Authors: GARDNER J RAO MV HOLLAND OW KELNER G SIMONS DS CHI PH ANDREWS JM KRETCHMER J GHEZZO M
Citation: J. Gardner et al., ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC, Journal of electronic materials, 25(5), 1996, pp. 885-892
AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC
Authors: RAO MV GRIFFITHS P GARDNER J HOLLAND OW GHEZZO M KRETCHMER J KELNER G FREITAS JA
Citation: Mv. Rao et al., AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC, Journal of electronic materials, 25(1), 1996, pp. 75-80
GROWTH AND PROPERTIES OF SCANDIUM EPITAXIAL-FILMS ON GAN
Authors: KAPLAN R PROKES SM BINARI SC KELNER G
Citation: R. Kaplan et al., GROWTH AND PROPERTIES OF SCANDIUM EPITAXIAL-FILMS ON GAN, Applied physics letters, 68(23), 1996, pp. 3248-3250
P-N-JUNCTION FORMATION IN 6H-SIC BY ACCEPTOR IMPLANTATION INTO N-TYPESUBSTRATE
Authors: RAO MV GARDNER J GRIFFITHS P HOLLAND OW KELNER G CHI PH SIMONS DS
Citation: Mv. Rao et al., P-N-JUNCTION FORMATION IN 6H-SIC BY ACCEPTOR IMPLANTATION INTO N-TYPESUBSTRATE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 333-338
H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN
Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K WICKENDEN DK
Citation: Sc. Binari et al., H, HE, AND N IMPLANT ISOLATION OF N-TYPE GAN, Journal of applied physics, 78(5), 1995, pp. 3008-3011
AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC
Authors: RAO MV GRIFFITHS P HOLLAND OW KELNER G FREITAS JA SIMONS DS CHI PH GHEZZO M
Citation: Mv. Rao et al., AL AND B ION-IMPLANTATIONS IN 6H-SIC AND 3C-SIC, Journal of applied physics, 77(6), 1995, pp. 2479-2485
WET CHEMICAL ETCHING WITH LACTIC-ACID SOLUTIONS FOR INP-BASED SEMICONDUCTOR-DEVICES
Authors: IKOSSIANASTASIOU K BINARI SC KELNER G BOOS JB KYONO CS MITTEREDER J GRIFFIN GL
Citation: K. Ikossianastasiou et al., WET CHEMICAL ETCHING WITH LACTIC-ACID SOLUTIONS FOR INP-BASED SEMICONDUCTOR-DEVICES, Journal of the Electrochemical Society, 142(10), 1995, pp. 3558-3564
CHARACTERIZATION OF THE LIGAND FOR FLT3 FLK2
Authors: CULPEPPER J HANNUM C MATTSON J LUH J MCCLANAHAN T CAMPBELL D ZURAWSKI S WAGNER J HUDAK S MARTINA N RENNICK D PETERSON D KASTELEIN R MENON S DANG W BAZAN JF MUENCH M KELNER G RONCAROLO MG ZLOTNIK A ROSNET O DUBREUIL P BIRNBAUM D LEE F
Citation: J. Culpepper et al., CHARACTERIZATION OF THE LIGAND FOR FLT3 FLK2, The FASEB journal, 8(5), 1994, pp. 10000963-10000963
LIGAND FOR FLT3 FLK2 RECEPTOR TYROSINE KINASE REGULATES GROWTH OF HEMATOPOIETIC STEM-CELLS AND IS ENCODED BY VARIANT RNAS
Authors: HANNUM C CULPEPPER J CAMPBELL D MCCLANAHAN T ZURAWSKI S BAZAN JF KASTELEIN R HUDAK S WAGNER J MATTSON J LUH J DUDA G MARTINA N PETERSON D MENON S SHANAFELT A MUENCH M KELNER G NAMIKAWA R RENNICK D RONCAROLO MG ZLOTNIK A ROSNET O DUBREUIL P BIRNBAUM D LEE F
Citation: C. Hannum et al., LIGAND FOR FLT3 FLK2 RECEPTOR TYROSINE KINASE REGULATES GROWTH OF HEMATOPOIETIC STEM-CELLS AND IS ENCODED BY VARIANT RNAS, Nature, 368(6472), 1994, pp. 643-648
MICROWAVE PERFORMANCE OF GAN MESFETS
Authors: BINARI SC ROWLAND LB KRUPPA W KELNER G DOVERSPIKE K GASKILL DK
Citation: Sc. Binari et al., MICROWAVE PERFORMANCE OF GAN MESFETS, Electronics Letters, 30(15), 1994, pp. 1248-1249
ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN
Authors: BINARI SC DIETRICH HB KELNER G ROWLAND LB DOVERSPIKE K GASKILL DK
Citation: Sc. Binari et al., ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN, Electronics Letters, 30(11), 1994, pp. 909-911
LOW-RESISTIVITY (SIMILAR-TO-10(-5)OMEGA-CM2) OHMIC CONTACTS TO 6H SILICON-CARBIDE FABRICATED USING CUBIC SILICON-CARBIDE CONTACT LAYER
Authors: DMITRIEV VA IRVINE K SPENCER M KELNER G
Citation: Va. Dmitriev et al., LOW-RESISTIVITY (SIMILAR-TO-10(-5)OMEGA-CM2) OHMIC CONTACTS TO 6H SILICON-CARBIDE FABRICATED USING CUBIC SILICON-CARBIDE CONTACT LAYER, Applied physics letters, 64(3), 1994, pp. 318-320
Risultati: 1-20 |