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Results: 1-10 |
Results: 10
ULTRASHALLOW P(-N JUNCTIONS IN SILICON(100) - ELECTRON-BEAM DIAGNOSTICS OF THE SURFACE ZONE())
Authors: ANDRONOV AN ROBOZEROV SV BAGRAEV NT KLYACHKIN LE
Citation: An. Andronov et al., ULTRASHALLOW P(-N JUNCTIONS IN SILICON(100) - ELECTRON-BEAM DIAGNOSTICS OF THE SURFACE ZONE()), Semiconductors, 32(2), 1998, pp. 124-130
HIGH-TEMPERATURE SINGLE-HOLE SILICON TRANSISTORS
Authors: BAGRAEV NT KLYACHKIN LE MALYARENKO AM GEHLHOFF W
Citation: Nt. Bagraev et al., HIGH-TEMPERATURE SINGLE-HOLE SILICON TRANSISTORS, Superlattices and microstructures, 23(6), 1998, pp. 1333-1338
INFRARED-INDUCED EMISSION FROM SILICON QUANTUM WIRES
Authors: BAGRAEV NT CHAIKINA EI KLYACHKIN LE MARKOV II GEHLHOFF W
Citation: Nt. Bagraev et al., INFRARED-INDUCED EMISSION FROM SILICON QUANTUM WIRES, Superlattices and microstructures, 23(2), 1998, pp. 337-344
INFRARED INDUCED EMISSION FROM SILICON QUANTUM WIRES
Authors: BAGRAEV NT CHAIKINA EI GEHLHOFF W KLYACHKIN LE MARKOV II MALYARENKO AM
Citation: Nt. Bagraev et al., INFRARED INDUCED EMISSION FROM SILICON QUANTUM WIRES, Solid-state electronics, 42(7-8), 1998, pp. 1199-1204
TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE
Authors: BERMAN LS GABARAEVA AD KAMANIN AV KARIMOV I KLYACHKIN LE SHARONOVA LV SHMIDT NM
Citation: Ls. Berman et al., TIME DRIFT OF PARAMETERS OF INDIUM PHOSPH IDE-SILICON DIOXIDE INTERFACE, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 65-69
METAL-INSULATOR-TRANSITION IN STRONGLY DOPED P(-WELLS ON A N-TYPE SILICON SURFACE() QUANTUM)
Authors: BAGRAEV NT KLYACHKIN LE MALYARENKO AM CHAIKINA EI VLADIMIRSKAYA EV GASUMYANTS VE KAIDANOV VI KVEDER VV SHALYNIN AI
Citation: Nt. Bagraev et al., METAL-INSULATOR-TRANSITION IN STRONGLY DOPED P(-WELLS ON A N-TYPE SILICON SURFACE() QUANTUM), Semiconductors, 29(12), 1995, pp. 1112-1124
POWER CHARGE CORRELATIONS IN P(-QUANTUM HOLES ON N-TYPE SILICON SURFACE())
Authors: BAGRAEV NT VLADIMIRSKAYA EV GASUMYANTS VE KAIDANOV VI KVEDER VV KLYACHKIN LE MALYARENKO AM SHALYNIN AI
Citation: Nt. Bagraev et al., POWER CHARGE CORRELATIONS IN P(-QUANTUM HOLES ON N-TYPE SILICON SURFACE()), Fizika tverdogo tela, 37(10), 1995, pp. 3005-3010
LOW-TEMPERATURE IMPURITY DIFFUSION IN SIC - PLANAR QUANTUM-SIZE P-N-JUNCTIONS AND N-P-N TRANSISTOR STRUCTURES
Authors: BAGRAEV NT KLYACHKIN LE SUKHANOV VL
Citation: Nt. Bagraev et al., LOW-TEMPERATURE IMPURITY DIFFUSION IN SIC - PLANAR QUANTUM-SIZE P-N-JUNCTIONS AND N-P-N TRANSISTOR STRUCTURES, Solid-state electronics, 36(12), 1993, pp. 1741-1747
INDUCED IR EMISSION IN SILICON WITH HEAVILY-DOPED DIFFUSED QUANTUM-WELL PROFILES
Authors: BAGRAEV NT KLYACHKIN LE CHAIKINA EI
Citation: Nt. Bagraev et al., INDUCED IR EMISSION IN SILICON WITH HEAVILY-DOPED DIFFUSED QUANTUM-WELL PROFILES, JETP letters, 58(8), 1993, pp. 598-602
NONEQUILIBRIUM IMPURITY DIFFUSION IN SILICON
Authors: BAGRAEV NT KLYACHKIN LE SUKHANOV VL
Citation: Nt. Bagraev et al., NONEQUILIBRIUM IMPURITY DIFFUSION IN SILICON, Semiconductor science and technology, 6(7), 1991, pp. 577-581
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