Authors:
MELINGER JS
MCMORROW D
CAMPBELL AB
BUCHNER S
TRAN LH
KNUDSON AR
CURTICE WR
Citation: Js. Melinger et al., PULSED LASER-INDUCED SINGLE EVENT UPSET AND CHARGE COLLECTION MEASUREMENTS AS A FUNCTION OF OPTICAL PENETRATION DEPTH, Journal of applied physics, 84(2), 1998, pp. 690-703
Authors:
MELINGER JS
MCMORROW D
BUCHNER S
KNUDSON AR
TRAN LH
CAMPBELL AB
Citation: Js. Melinger et al., INVESTIGATIONS OF SINGLE-EVENT UPSETS AND CHARGE COLLECTION IN MICROELECTRONICS USING VARIABLE-LENGTH LASER-GENERATED CHARGE TRACKS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1487-1493
Authors:
MCMORROW D
MELINGER JS
KNUDSON AR
BUCHNER S
TRAN LH
CAMPBELL AB
CURTICE WR
Citation: D. Mcmorrow et al., CHARGE-ENHANCEMENT MECHANISMS OF GAAS FIELD-EFFECT TRANSISTORS - EXPERIMENT AND SIMULATION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1494-1500
Authors:
MCMORROW D
MELINGER JS
KNUDSON AR
BUCHNER S
IKOSSIANASTASIOU K
MOSS SC
ENGELHARDT D
CHILDS T
CAMPBELL AB
Citation: D. Mcmorrow et al., CHARACTERIZATION OF LT GAAS CARRIER LIFETIME IN MULTILAYER GAAS EPITAXIAL WAFERS BY THE TRANSIENT REFLECTIVITY TECHNIQUE, IEEE transactions on nuclear science, 44(6), 1997, pp. 2290-2297
Authors:
MCMORROW D
CURTICE WR
BUCHNER S
KNUDSON AR
MELINGER JS
CAMPBELL AB
Citation: D. Mcmorrow et al., CHARGE-COLLECTION CHARACTERISTICS OF GAAS-MESFETS FABRICATED WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER - COMPUTER-SIMULATION, IEEE transactions on nuclear science, 43(6), 1996, pp. 2904-2912
Authors:
MCMORROW D
WEATHERFORD TR
KNUDSON AR
BUCHNER S
MELINGER JS
TRAN LH
CAMPBELL AB
MARSHALL PW
DALE CJ
PECZALSKI A
BAIER S
Citation: D. Mcmorrow et al., CHARGE-COLLECTION CHARACTERISTICS OF GAAS HETEROSTRUCTURE FETS FABRICATED WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, IEEE transactions on nuclear science, 43(3), 1996, pp. 918-923
Authors:
SCHWANK JR
SEXTON FW
WEATHERFORD TR
MCMORROW D
KNUDSON AR
MELINGER JS
Citation: Jr. Schwank et al., CHARGE COLLECTION IN GAAS-MESFETS FABRICATED IN SEMIINSULATING SUBSTRATES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1585-1591
Authors:
DUSSAULT H
HOWARD JW
BLOCK RC
STAPOR WJ
KNUDSON AR
MCDONALD PT
PINTO MR
Citation: H. Dussault et al., HIGH-ENERGY HEAVY-ION-INDUCED CHARGE-TRANSPORT ACROSS MULTIPLE JUNCTIONS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1780-1788
Authors:
MCMORROW D
WEATHERFORD TR
CURTICE WR
KNUDSON AR
BUCHNER S
MELINGER JS
TRAN LH
CAMPBELL AB
Citation: D. Mcmorrow et al., ELIMINATION OF CHARGE-ENHANCEMENT EFFECTS IN GAAS-FETS WITH A LOW-TEMPERATURE-GROWN GAAS BUFFER LAYER, IEEE transactions on nuclear science, 42(6), 1995, pp. 1837-1843
Authors:
DUSSAULT H
HOWARD JW
BLOCK RC
PINTO MR
STAPOR WJ
KNUDSON AR
Citation: H. Dussault et al., HIGH-ENERGY HEAVY-ION-INDUCED SINGLE EVENT TRANSIENTS IN EPITAXIAL STRUCTURES, IEEE transactions on nuclear science, 41(6), 1994, pp. 2018-2025
Authors:
HOWARD JW
BLOCK RC
DUSSAULT H
STAPOR WJ
MCDONALD PT
KNUDSON AR
PINTO MR
Citation: Jw. Howard et al., A NOVEL-APPROACH FOR MEASURING THE RADIAL-DISTRIBUTION OF CHARGE IN AHEAVY-ION TRACK, IEEE transactions on nuclear science, 41(6), 1994, pp. 2077-2084
Citation: P. Harihar et al., SCINTILLATION DECAYS IN A TRANS-STILBENE CRYSTAL, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 336(1-2), 1993, pp. 176-178
Authors:
MCMORROW D
WEATHERFORD T
KNUDSON AR
TRAN LH
MELINGER JS
CAMPBELL AB
Citation: D. Mcmorrow et al., SINGLE-EVENT DYNAMICS OF HIGH-PERFORMANCE HBTS AND GAAS-MESFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1858-1866
Authors:
WEATHERFORD TR
MCMORROW D
CURTICE WR
KNUDSON AR
CAMPBELL AB
Citation: Tr. Weatherford et al., SINGLE EVENT INDUCED CHARGE-TRANSPORT MODELING OF GAAS-MESFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1867-1871
Authors:
DUSSAULT H
HOWARD JW
BLOCK RC
PINTO MR
STAPOR WJ
KNUDSON AR
Citation: H. Dussault et al., NUMERICAL-SIMULATION OF HEAVY-ION CHARGE GENERATION AND COLLECTION DYNAMICS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1926-1934