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Results: 1-9 |
Results: 9

Authors: KOH R
Citation: R. Koh, SIMULATION ON A NOVEL BODY-DRIVEN SILICON-ON-INSULATOR METAL-OXIDE-SILICON FIELD-EFFECT-TRANSISTOR FOR SUB-0.1 MU-M SMALL LOGIC SWING OPERATION, JPN J A P 1, 37(4A), 1998, pp. 1793-1800

Authors: KOH R MATSUMOTO H
Citation: R. Koh et H. Matsumoto, ANALYSIS OF THE THRESHOLD VOLTAGE ADJUSTMENT AND FLOATING BODY EFFECTSUPPRESSION FOR 0.1-MU-M FULLY DEPLETED SOI-MOSFET, JPN J A P 1, 36(3B), 1997, pp. 1563-1568

Authors: KOH R MOGAMI T KATO H
Citation: R. Koh et al., SIMULATED DEVICE DESIGN OPTIMIZATION TO REDUCE THE FLOATING BODY EFFECT FOR SUB-QUARTER MICRON FULLY DEPLETED SOI-MOSFETS, IEICE transactions on electronics, E80C(7), 1997, pp. 893-898

Authors: KOH R KATO H MATSUMOTO H
Citation: R. Koh et al., CAPACITANCE NETWORK MODEL OF THE SHORT-CHANNEL EFFECT FOR 0.1 MU-M FULLY DEPLETED SOI MOSFET, JPN J A P 1, 35(2B), 1996, pp. 996-1000

Authors: JONES JC CHIZ PS KOH R MATTHEW J
Citation: Jc. Jones et al., CONTINUITY OF KINETICS BETWEEN SUBCRITICAL AND SUPERCRITICAL REGIMES IN THE OXIDATION OF A HIGH-VOLATILE SOLID SUBSTRATE, Fuel, 75(15), 1996, pp. 1733-1736

Authors: JONES JC CHIZ PS KOH R MATTHEW J
Citation: Jc. Jones et al., KINETIC-PARAMETERS OF OXIDATION OF BITUMINOUS COALS FROM HEAT-RELEASERATE MEASUREMENTS, Fuel, 75(15), 1996, pp. 1755-1757

Authors: KOH R KATO H
Citation: R. Koh et H. Kato, AN INVESTIGATION ON THE SHORT-CHANNEL EFFECT FOR O.1-MU-M FULLY DEPLETED SOIMOSFET USING EQUIVALENT ONE-DIMENSIONAL MODEL, JPN J A P 1, 34(2B), 1995, pp. 836-841

Authors: KOH R MOGAMI T
Citation: R. Koh et T. Mogami, CARRIER RECOMBINATION INFLUENCE ON THE SOI MOSFET FLOATING BODY EFFECT, IEEE electron device letters, 15(9), 1994, pp. 327-329

Authors: OGURA A FURUYA A KOH R
Citation: A. Ogura et al., 50-NM-THICK SILICON-ON-INSULATOR FABRICATION BY ADVANCED EPITAXIAL LATERAL OVERGROWTH - TUNNEL EPITAXY, Journal of the Electrochemical Society, 140(4), 1993, pp. 1125-1130
Risultati: 1-9 |