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Results: 1-25/48
Authors:
UENO K
KOSHIDA N
Citation: K. Ueno et N. Koshida, NEGATIVE-RESISTANCE EFFECTS IN LIGHT-EMITTING POROUS SILICON DIODES, JPN J A P 1, 37(3B), 1998, pp. 1096-1099
Authors:
TAKAHASHI M
ARAKI M
KOSHIDA N
Citation: M. Takahashi et al., BURIED OPTICAL WAVE-GUIDES OF POROUS SILICON, JPN J A P 2, 37(9AB), 1998, pp. 1017-1019
Authors:
HASHIMOTO M
KOREEDA T
KOSHIDA N
KOMURO M
ATODA N
Citation: M. Hashimoto et al., APPLICATION OF DUAL-FUNCTIONAL MOO3 WO3 BILAYER RESISTS TO FOCUSED ION-BEAM NANOLITHOGRAPHY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2767-2771
Authors:
SHENG X
KOYAMA H
KOSHIDA N
Citation: X. Sheng et al., EFFICIENT SURFACE-EMITTING COLD CATHODES BASED ON ELECTROLUMINESCENT POROUS SILICON DIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 793-795
Authors:
SUDA Y
OBATA K
KOSHIDA N
Citation: Y. Suda et al., BAND DISPERSIONS IN PHOTOLUMINESCENT POROUS SI, Physical review letters, 80(16), 1998, pp. 3559-3562
Authors:
MATSUMOTO T
MIMURA H
KOSHIDA N
MASUMOTO Y
Citation: T. Matsumoto et al., THE DENSITY-OF-STATES IN SILICON NANOSTRUCTURES DETERMINED BY SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS, Journal of applied physics, 84(11), 1998, pp. 6157-6161
Authors:
KOYAMA H
MATSUSHITA Y
KOSHIDA N
Citation: H. Koyama et al., ACTIVATION OF BLUE EMISSION FROM OXIDIZED POROUS SILICON BY ANNEALINGIN WATER-VAPOR, Journal of applied physics, 83(3), 1998, pp. 1776-1778
Authors:
TANAKA S
KOYAMA H
KOSHIDA N
Citation: S. Tanaka et al., PHOTOLUMINESCENCE DECAY DYNAMICS OF ION-IRRADIATED POROUS SILICON - EVIDENCE FOR THE ABSENCE OF CARRIER MIGRATION, Applied physics letters, 73(16), 1998, pp. 2334-2336
Authors:
GELLOZ B
NAKAGAWA T
KOSHIDA N
Citation: B. Gelloz et al., ENHANCEMENT OF THE QUANTUM EFFICIENCY AND STABILITY OF ELECTROLUMINESCENCE FROM POROUS SILICON BY ANODIC PASSIVATION, Applied physics letters, 73(14), 1998, pp. 2021-2023
Authors:
MATSUMOTO T
MASUMOTO Y
NAKAGAWA T
HASHIMOTO M
UENO K
KOSHIDA N
Citation: T. Matsumoto et al., ELECTROLUMINESCENCE FROM DEUTERIUM TERMINATED POROUS SILICON, JPN J A P 2, 36(8B), 1997, pp. 1089-1091
Authors:
SHENG X
KOYAMA H
KOSHIDA N
IWASAKI S
NEGISHI N
CHUMAN T
YOSHIKAWA T
OGASAWARA K
Citation: X. Sheng et al., IMPROVED COLD ELECTRON-EMISSION CHARACTERISTICS OF ELECTROLUMINESCENTPOROUS SILICON DIODES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1661-1665
Authors:
ARAKI M
KOYAMA H
KOSHIDA N
Citation: M. Araki et al., FUNCTIONAL-PROPERTIES OF LUMINESCENT POROUS SILICON AS A COMPONENT OFOPTOELECTRONIC INTEGRATION, Superlattices and microstructures, 22(3), 1997, pp. 365-370
Authors:
MATSUMOTO T
MASUMOTO Y
NAKASHIMA S
MIMURA H
KOSHIDA N
Citation: T. Matsumoto et al., COUPLING EFFECT OF SURFACE VIBRATION AND QUANTUM CONFINEMENT CARRIERSIN POROUS SILICON, Applied surface science, 114, 1997, pp. 140-144
Authors:
MATSUMOTO T
MASUMOTO Y
NAKASHIMA S
KOSHIDA N
Citation: T. Matsumoto et al., LUMINESCENCE FROM DEUTERIUM-TERMINATED POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 31-34
Authors:
MIZUNO H
KOYAMA H
KOSHIDA N
Citation: H. Mizuno et al., PHOTO-ASSISTED CONTINUOUS TUNING OF PHOTOLUMINESCENCE SPECTRA OF POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 61-63
Authors:
SHENG X
OZAKI T
KOYAMA H
KOSHIDA N
YOSHIKAWA T
YAMAGUCHI M
OGASAWARA K
Citation: X. Sheng et al., OPERATION OF ELECTROLUMINESCENT POROUS SILICON DIODES AS SURFACE-EMITTING COLD CATHODES, Thin solid films, 297(1-2), 1997, pp. 314-316
Authors:
KOYAMA H
KOSHIDA N
Citation: H. Koyama et N. Koshida, SPECTROSCOPIC ANALYSIS OF THE BLUE-GREEN EMISSION FROM OXIDIZED POROUS SILICON - POSSIBLE EVIDENCE FOR SI-NANOSTRUCTURE-BASED MECHANISMS, Solid state communications, 103(1), 1997, pp. 37-41
Authors:
OGURO T
KOYAMA H
OZAKI T
KOSHIDA N
Citation: T. Oguro et al., MECHANISM OF THE VISIBLE ELECTROLUMINESCENCE FROM METAL POROUS SILICON N-SI DEVICES, Journal of applied physics, 81(3), 1997, pp. 1407-1412
Authors:
HASHIMOTO M
WATANUKI S
KOSHIDA N
KOMURO M
ATODA N
Citation: M. Hashimoto et al., DUAL FUNCTION OF THIN MOO3 AND WO3 FILMS AS NEGATIVE AND POSITIVE RESISTS FOR FOCUSED ION-BEAM LITHOGRAPHY, JPN J A P 1, 35(6A), 1996, pp. 3665-3669
Authors:
ARAKI M
KOYAMA H
KOSHIDA N
Citation: M. Araki et al., OPTICAL CAVITY BASED ON POROUS SILICON SUPERLATTICE TECHNOLOGY, JPN J A P 1, 35(2B), 1996, pp. 1041-1044
Authors:
KOIZUMI T
OBATA K
TEZUKA Y
SHIN S
KOSHIDA N
SUDA Y
Citation: T. Koizumi et al., EFFECTS OF OXIDATION ON ELECTRONIC STATES AND PHOTOLUMINESCENCE PROPERTIES OF POROUS SI, JPN J A P 2, 35(7A), 1996, pp. 803-806
Authors:
KOYAMA H
SHIMA N
KOSHIDA N
Citation: H. Koyama et al., LARGE AND IRREGULAR SHIFT OF PHOTOLUMINESCENCE EXCITATION-SPECTRA OBSERVED IN PHOTOCHEMICALLY ETCHED POROUS SILICON (VOL 53, PG 13291, 1996), Physical review. B, Condensed matter, 54(19), 1996, pp. 14189-14189
Authors:
TANINO H
KUPRIN A
DEAI H
KOSHIDA N
Citation: H. Tanino et al., RAMAN-STUDY OF FREESTANDING POROUS SILICON, Physical review. B, Condensed matter, 53(4), 1996, pp. 1937-1947
Authors:
KOYAMA H
SHIMA N
KOSHIDA N
Citation: H. Koyama et al., LARGE AND IRREGULAR SHIFT OF PHOTOLUMINESCENCE EXCITATION-SPECTRA OBSERVED IN PHOTOCHEMICALLY ETCHED POROUS SILICON, Physical review. B, Condensed matter, 53(20), 1996, pp. 13291-13294
Authors:
ARAKI M
KOYAMA H
KOSHIDA N
Citation: M. Araki et al., PRECISELY TUNED EMISSION FROM POROUS SILICON VERTICAL OPTICAL CAVITY IN THE VISIBLE REGION, Journal of applied physics, 80(9), 1996, pp. 4841-4844