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Results: 1-23 |
Results: 23
SELF-ASSEMBLED GE DOTS - GROWTH, CHARACTERIZATION, ORDERING, AND APPLICATIONS
Authors: SCHITTENHELM P ENGEL C FINDEIS F ABSTREITER G DARHUBER AA BAUER G KOSOGOV AO WERNER P
Citation: P. Schittenhelm et al., SELF-ASSEMBLED GE DOTS - GROWTH, CHARACTERIZATION, ORDERING, AND APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1575-1581
SELF-ORGANIZED DEFECT-FREE INAS GAAS AND INAS/INGAAS/GAAS QUANTUM DOTS WITH HIGH LATERAL DENSITY GROWN BY MOCVD/
Authors: HEINRICHSDORFF F KROST A BIMBERG D KOSOGOV AO WERNER P
Citation: F. Heinrichsdorff et al., SELF-ORGANIZED DEFECT-FREE INAS GAAS AND INAS/INGAAS/GAAS QUANTUM DOTS WITH HIGH LATERAL DENSITY GROWN BY MOCVD/, Applied surface science, 123, 1998, pp. 725-728
SEMICONDUCTOR QUANTUM DOTS FOR APPLICATION IN DIODE-LASERS
Authors: GRUNDMANN M LEDENTSOV NN KIRSTAEDTER N HEINRICHSDORFF F KROST A BIMBERG D KOSOGOV AO RUVIMOV SS WERNER P USTINOV VM KOPEV PS ALFEROV ZI
Citation: M. Grundmann et al., SEMICONDUCTOR QUANTUM DOTS FOR APPLICATION IN DIODE-LASERS, Thin solid films, 318(1-2), 1998, pp. 83-87
HIGH-POWER CONTINUOUS-WAVE OPERATION OF A INGAAS ALGAAS QUANTUM-DOT LASER/
Authors: MAXIMOV MV SHERNYAKOV YM TSATSULNIKOV AF LUNEV AV SAKHAROV AV USTINOV VM EGOROV AY ZHUKOV AE KOVSH AR KOPEV PS ASRYAN LV ALFEROV ZI LEDENTSOV NN BIMBERG D KOSOGOV AO WERNER P
Citation: Mv. Maximov et al., HIGH-POWER CONTINUOUS-WAVE OPERATION OF A INGAAS ALGAAS QUANTUM-DOT LASER/, Journal of applied physics, 83(10), 1998, pp. 5561-5563
HIGH-RESOLUTION X-RAY-DIFFRACTION AND REFLECTIVITY STUDIES OF VERTICAL AND LATERAL ORDERING IN MULTIPLE SELF-ORGANIZED INGAAS QUANTUM DOTS
Authors: DARHUBER AA HOLY V STANGL J BAUER G KROST A GRUNDMANN M BIMBERG D USTINOV VM KOPEV PS KOSOGOV AO WERNER P
Citation: Aa. Darhuber et al., HIGH-RESOLUTION X-RAY-DIFFRACTION AND REFLECTIVITY STUDIES OF VERTICAL AND LATERAL ORDERING IN MULTIPLE SELF-ORGANIZED INGAAS QUANTUM DOTS, JPN J A P 1, 36(6B), 1997, pp. 4084-4087
GROWTH AND CHARACTERIZATION OF COHERENT QUANTUM DOTS GROWN BY SINGLE-CYCLE AND MULTICYCLE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: KOCHNEV IV LEDENTSOV NN MAXIMOV MV TSATSULNIKOV AF SAKHAROV AV VOLOVIK BV KOPEV PS ALFEROV ZI BIMBERG D KOSOGOV AO RUVIMOV SS WERNER P GOSELE U
Citation: Iv. Kochnev et al., GROWTH AND CHARACTERIZATION OF COHERENT QUANTUM DOTS GROWN BY SINGLE-CYCLE AND MULTICYCLE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 36(6B), 1997, pp. 4107-4110
INAS GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: HEINRICHSDORFF F KROST A KIRSTAEDTER N MAO MH GRUNDMANN M BIMBERG D KOSOGOV AO WERNER P
Citation: F. Heinrichsdorff et al., INAS GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 36(6B), 1997, pp. 4129-4133
VERTICALLY COUPLED QUANTUM-DOT LASERS - FIRST DEVICE ORIENTED STRUCTURES WITH HIGH INTERNAL QUANTUM EFFICIENCY
Authors: ZAITSEV SV GORDEEV NY KOPCHATOV VI USTINOV VM ZHUKOV AE EGOROV AY LEDENTSOV NN MAXIMOV MV KOPEV PS KOSOGOV AO ALFEROV ZI
Citation: Sv. Zaitsev et al., VERTICALLY COUPLED QUANTUM-DOT LASERS - FIRST DEVICE ORIENTED STRUCTURES WITH HIGH INTERNAL QUANTUM EFFICIENCY, JPN J A P 1, 36(6B), 1997, pp. 4219-4220
INGAAS GAAS QUANTUM-DOT LASERS WITH ULTRAHIGH CHARACTERISTIC TEMPERATURE (T-0=385K) GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: MAXIMOV MV KOCHNEV IV SHERNYAKOV YM ZAITSEV SV GORDEEV NY TSATSULNIKOV AF SAKHAROV AV KRESTNIKOV IL KOPEV PS ALFEROV ZI LEDENTSOV NN BIMBERG D KOSOGOV AO WERNER P GOSELE U
Citation: Mv. Maximov et al., INGAAS GAAS QUANTUM-DOT LASERS WITH ULTRAHIGH CHARACTERISTIC TEMPERATURE (T-0=385K) GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 36(6B), 1997, pp. 4221-4223
OPTICAL-PROPERTIES OF VERTICALLY COUPLED INGAAS QUANTUM DOTS IN A GAAS MATRIX
Authors: MAKSIMOV MV SHERNYAKOV YM ZAITSEV SV GORDEEV NY EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO SAKHAROV AV LEDENTSOV NN USTINOV VM TSATSULNIKOV AF ALFEROV ZI BOHRER J BIMBERG D
Citation: Mv. Maksimov et al., OPTICAL-PROPERTIES OF VERTICALLY COUPLED INGAAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 31(6), 1997, pp. 571-574
STRUCTURAL CHARACTERIZATION OF SELF-ASSEMBLED QUANTUM-DOT STRUCTURES BY X-RAY-DIFFRACTION TECHNIQUES
Authors: DARHUBER AA STANGL J HOLY V BAUER G KROST A GRUNDMANN M BIMBERG D USTINOV VM KOPEV PS KOSOGOV AO WERNER P
Citation: Aa. Darhuber et al., STRUCTURAL CHARACTERIZATION OF SELF-ASSEMBLED QUANTUM-DOT STRUCTURES BY X-RAY-DIFFRACTION TECHNIQUES, Thin solid films, 306(2), 1997, pp. 198-204
LOW-THRESHOLD INJECTION-LASERS BASED ON VERTICALLY COUPLED QUANTUM DOTS
Authors: USTINOV VM EGOROV AY KOVSH AR ZHUKOV AE MAXIMOV MV TSATSULNIKOV AF GORDEEV NY ZAITSEV SV SHERNYAKOV YM BERT NA KOPEV PS ALFEROV ZI LEDENTSOV NN BOHRER J BIMBERG D KOSOGOV AO WERNER P GOSELE U
Citation: Vm. Ustinov et al., LOW-THRESHOLD INJECTION-LASERS BASED ON VERTICALLY COUPLED QUANTUM DOTS, Journal of crystal growth, 175, 1997, pp. 689-695
ROOM-TEMPERATURE CONTINUOUS-WAVE LASING FROM STACKED INAS GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors: HEINRICHSDORFF F MAO MH KIRSTAEDTER N KROST A BIMBERG D KOSOGOV AO WERNER P
Citation: F. Heinrichsdorff et al., ROOM-TEMPERATURE CONTINUOUS-WAVE LASING FROM STACKED INAS GAAS QUANTUM DOTS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 71(1), 1997, pp. 22-24
LATERAL AND VERTICAL ORDERING IN MULTILAYERED SELF-ORGANIZED INGAAS QUANTUM DOTS STUDIED BY HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: DARHUBER AA HOLY V STANGL J BAUER G KROST A HEINRICHSDORFF F GRUNDMANN M BIMBERG D USTINOV VM KOPEV PS KOSOGOV AO WERNER P
Citation: Aa. Darhuber et al., LATERAL AND VERTICAL ORDERING IN MULTILAYERED SELF-ORGANIZED INGAAS QUANTUM DOTS STUDIED BY HIGH-RESOLUTION X-RAY-DIFFRACTION, Applied physics letters, 70(8), 1997, pp. 955-957
PROPERTIES OF STRAINED (IN, GA, AL)AS LASERS WITH LATERALLY MODULATEDACTIVE-REGION
Authors: LEDENTSOV NN BIMBERG D SHERNYAKOV YM KOCHNEV V MAXIMOV MV SAKHAROV AV KRESTNIKOV IL EGOROV AY ZHUKOV AE TSATSULNIKOV AF VOLOVIK BV USTINOV VM KOPEV PS ALFEROV ZI KOSOGOV AO WERNER P
Citation: Nn. Ledentsov et al., PROPERTIES OF STRAINED (IN, GA, AL)AS LASERS WITH LATERALLY MODULATEDACTIVE-REGION, Applied physics letters, 70(21), 1997, pp. 2888-2890
FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX
Authors: EGOROV AY ZHUKOV AE KOPEV PS LEDENTSOV NN MAKSIMOV MV USTINOV VM TSATSULNIKOV AF BERT NA KOSOGOV AO ALFEROV ZI BIMBERG D
Citation: Ay. Egorov et al., FORMATION OF VERTICALLY ALIGNED ARRAYS OF STRAINED INAS QUANTUM DOTS IN A GAAS(100) MATRIX, Semiconductors, 30(9), 1996, pp. 879-883
AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX
Authors: ALFEROV ZI BERT NA EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV SAKHAROV AV USTINOV VM TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation: Zi. Alferov et al., AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 30(2), 1996, pp. 194-196
DIRECT FORMATION OF VERTICALLY COUPLED QUANTUM DOTS IN STRANSKI-KRASTANOW GROWTH
Authors: LEDENTSOV NN SHCHUKIN VA GRUNDMANN M KIRSTAEDTER N BOHRER J SCHMIDT O BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS ZAITSEV SV GORDEEV NY ALFEROV ZI BOROVKOV AI KOSOGOV AO RUVIMOV SS WERNER P GOSELE U HEYDENREICH J
Citation: Nn. Ledentsov et al., DIRECT FORMATION OF VERTICALLY COUPLED QUANTUM DOTS IN STRANSKI-KRASTANOW GROWTH, Physical review. B, Condensed matter, 54(12), 1996, pp. 8743-8750
ORDERED ARRAYS OF QUANTUM DOTS - FORMATION, ELECTRONIC-SPECTRA, RELAXATION PHENOMENA, LASING
Authors: LEDENTSOV NN GRUNDMANN M KIRSTAEDTER N SCHMIDT O HEITZ R BOHRER J BIMBERG D USTINOV VM SHCHUKIN VA EGOROV AY ZHUKOV AE ZAITSEV S KOPEV PS ALFEROV ZI RUVIMOV SS KOSOGOV AO WERNER P GOSELE U HEYDENREICH J
Citation: Nn. Ledentsov et al., ORDERED ARRAYS OF QUANTUM DOTS - FORMATION, ELECTRONIC-SPECTRA, RELAXATION PHENOMENA, LASING, Solid-state electronics, 40(1-8), 1996, pp. 785-798
FORMATION OF COHERENT SUPERDOTS USING METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: LEDENTSOV NN BOHRER J BIMBERG D KOCHNEV IV MAXIMOV MV KOPEV PS ALFEROV ZI KOSOGOV AO RUVIMOV SS WERNER P GOSELE U
Citation: Nn. Ledentsov et al., FORMATION OF COHERENT SUPERDOTS USING METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(8), 1996, pp. 1095-1097
STRUCTURAL AND OPTICAL-PROPERTIES OF INAS-GAAS QUANTUM DOTS SUBJECTEDTO HIGH-TEMPERATURE ANNEALING
Authors: KOSOGOV AO WERNER P GOSELE U LEDENTSOV NN BIMBERG D USTINOV VM EGOROV AY ZHUKOV AE KOPEV PS BERT NA ALFEROV ZI
Citation: Ao. Kosogov et al., STRUCTURAL AND OPTICAL-PROPERTIES OF INAS-GAAS QUANTUM DOTS SUBJECTEDTO HIGH-TEMPERATURE ANNEALING, Applied physics letters, 69(20), 1996, pp. 3072-3074
ULTRATHIN LAYERS IN INGAASP-INP SYSTEM OB TAINED THROUGH LIQUID-PHASEEPITAXY
Authors: GRUZDOV VG KOSOGOV AO FALEEV NN
Citation: Vg. Gruzdov et al., ULTRATHIN LAYERS IN INGAASP-INP SYSTEM OB TAINED THROUGH LIQUID-PHASEEPITAXY, Pis'ma v Zurnal tehniceskoj fiziki, 20(14), 1994, pp. 1-7
TOPOGRAPHY DEVELOPMENT ON THE SURFACE OF A SEMICONDUCTOR HETEROSTRUCTURE UNDER AR-BEAM MILLING( ION)
Authors: BERT NA KOSOGOV AO MUSIKHIN YG
Citation: Na. Bert et al., TOPOGRAPHY DEVELOPMENT ON THE SURFACE OF A SEMICONDUCTOR HETEROSTRUCTURE UNDER AR-BEAM MILLING( ION), Applied surface science, 72(4), 1993, pp. 381-392
Risultati: 1-23 |