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Results:
1-16
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Results: 16
Authors:
STANGL G
HUDEK P
KOSTIC I
RUDENAUER F
RANGELOW I
RIEDLING K
FALLMANN W
Citation: G. Stangl et al., MICRO-TECHNOLOGY OF DENSELY SPACED NONCONVENTIONAL PATTERNS FOR SPACEAPPLICATIONS, Microelectronic engineering, 42, 1998, pp. 187-190
Authors:
BRUENGER WH
BUSCHBECK H
CEKAN E
EDER S
FEDYNYSHYN TH
HERTLEIN WG
HUDEK P
KOSTIC I
LOESCHNER H
RANGELOW IW
TORKLER M
Citation: Wh. Bruenger et al., DUV RESIST UV-II HS APPLIED TO HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND TO MASKED ION-BEAM PROXIMITY AND REDUCTION PRINTING, Microelectronic engineering, 42, 1998, pp. 237-240
Authors:
HUDEK P
KOSTIC I
BELOV M
RANGELOW IW
SHI F
PAWLOWSKI G
SPIESS W
BUSCHBECK H
CEKAN E
EDER S
LOSCHNER H
Citation: P. Hudek et al., DEEP-ULTRAVIOLET RESISTS AZ DX-561 AND AZ DX-1300P APPLIED FOR ELECTRON-BEAM AND MASKED ION-BEAM LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2550-2554
Authors:
BABIN S
HUDEK P
KOSTIC I
Citation: S. Babin et al., QUANTITATIVE MEASUREMENT OF THE RESIST HEATING IN A VARIABLE SHAPED ELECTRON LITHOGRAPHY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 311-315
Authors:
KOSTIC I
Citation: I. Kostic, A QUIET LIFE, Chemistry in Britain, 33(3), 1997, pp. 68-68
Authors:
RANGELOW IW
SHI F
HUDEK P
KOSTIC I
HAMMEL E
LOSCHNER H
STENGL G
CEKAN E
Citation: Iw. Rangelow et al., SILICON STENCIL MASKS FOR MASKED ION-BEAM LITHOGRAPHY PROXIMITY PRINTING, Microelectronic engineering, 30(1-4), 1996, pp. 257-260
Authors:
HUDEK P
RANGELOW IW
KOSTIC I
MUNZEL N
DARAKTCHIEV I
Citation: P. Hudek et al., EVALUATION OF CHEMICALLY AMPLIFIED DEEP UV RESIST FOR MICROMACHINING USING E-BEAM LITHOGRAPHY AND DRY-ETCHING, Microelectronic engineering, 30(1-4), 1996, pp. 309-312
Authors:
ADAM R
BENACKA S
CHROMIK S
DARULA M
STRBIK V
GAZI S
KOSTIC I
PINCIK E
Citation: R. Adam et al., YBA2CU3O7-X STEP-EDGE JUNCTIONS PREPARED ON SAPPHIRE SUBSTRATES WITH YSZ BUFFER LAYER, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 2774-2777
Authors:
HUDEK P
RANGELOW IW
DARAKTCHIEV IS
KOSTIC I
Citation: P. Hudek et al., ON THE APPLICATION OF CHEMICALLY AMPLIFIED POSITIVE RESISTS TO MICROMACHINING, Microelectronic engineering, 27(1-4), 1995, pp. 401-404
Authors:
HUDEK P
RANGELOW IW
DARAKTCHIEV IS
KOSTIC I
Citation: P. Hudek et al., E-BEAM AND RIE EXAMINATION OF CHEMICALLY AMPLIFIED POSITIVE-TONE RESIST CAMP6, Microelectronic engineering, 26(3-4), 1995, pp. 167-179
Authors:
PORGES M
SAFRANKOVA J
LALINSKY T
KOSTIC I
RANGELOW IW
TEGUDE FJ
JAGER D
Citation: M. Porges et al., ASYMMETRIC (SCHOTTKY-OHMIC) MSM PHOTODETECTOR, Solid-state electronics, 38(2), 1995, pp. 425-427
Authors:
RANGELOW IW
BORKOWICZ Z
HUDEK P
KOSTIC I
Citation: Iw. Rangelow et al., TRANSFER OF SINGLE-LAYER POSITIVE RESIST SUBMICROMETER AND NANOMETER STRUCTURES INTO SILICON, Microelectronic engineering, 25(1), 1994, pp. 49-66
Authors:
RANGELOW IW
HUDEK P
KOSTIC I
BORKOWICZ Z
STANGL G
Citation: Iw. Rangelow et al., SUBMICRO- AND NANOMETER E-BEAM LITHOGRAPHY AND REACTIVE ION ETCHING WITH SINGLE-LAYER CHEMICALLY AMPLIFIED NEGATIVE RESIST, Microelectronic engineering, 23(1-4), 1994, pp. 283-286
Authors:
BABIN SV
KOSTIC I
HUDEK P
Citation: Sv. Babin et al., EXPERIMENTAL INVESTIGATION OF THE RESIST HEATING EFFECT IN A VARIABLYSHAPED EBL SYSTEM, Microelectronic engineering, 21(1-4), 1993, pp. 173-176
Authors:
HUDEK P
BORKOWICZ Z
KOSTIC I
RANGELOW IW
KASSING R
Citation: P. Hudek et al., SINGLE-LAYER RESIST FOR DEEP, MICROMETER AND NANOMETER STRUCTURE TRANSFER, Microelectronic engineering, 21(1-4), 1993, pp. 283-288
Authors:
SAFRANKOVA J
PORGES M
LALINSKY T
MOZOLOVA Z
HUDEK P
KOSTIC I
KRAUS J
VONWENDORFF W
TEGUDE FJ
JAGER D
Citation: J. Safrankova et al., PHOTOELECTRICAL PROPERTIES OF GAAS MSM PHOTODETECTOR COMPATIBLE WITH PSEUDOMORPHIC HETEROSTRUCTURE MESFET, Physica status solidi. a, Applied research, 140(2), 1993, pp. 111-114
Risultati:
1-16
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