ACNP - Italian Periodicals Catalogue

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Results: 1-22 |

Results: 22

HOLE-BURNING SPECTROSCOPY OF POROUS SILICON

Authors: KOVALEV D HECKLER H AVERBOUKH B BENCHORIN M SCHWARTZKOPFF M KOCH F

Citation: D. Kovalev et al., HOLE-BURNING SPECTROSCOPY OF POROUS SILICON, Physical review. B, Condensed matter, 57(7), 1998, pp. 3741-3744

BREAKDOWN OF THE K-CONSERVATION RULE IN SI NANOCRYSTALS

Authors: KOVALEV D HECKLER H BENCHORIN M POLISSKI G SCHWARTZKOPFF M KOCH F

Citation: D. Kovalev et al., BREAKDOWN OF THE K-CONSERVATION RULE IN SI NANOCRYSTALS, Physical review letters, 81(13), 1998, pp. 2803-2806

ACCEPTOR DEPLETION IN P-TYPE POROUS SILICON

Authors: POLISSKI G DOLLINGER G BERGMAIER A KOVALEV D HECKLER H KOCH F

Citation: G. Polisski et al., ACCEPTOR DEPLETION IN P-TYPE POROUS SILICON, Physica status solidi. a, Applied research, 168(1), 1998, pp. 1-2

LUMINESCENCE OF POROUS SILICON IN A WEAK CONFINEMENT REGIME

Authors: POLISSKI G HECKLER H KOVALEV D SCHWARTZKOPFF M KOCH F

Citation: G. Polisski et al., LUMINESCENCE OF POROUS SILICON IN A WEAK CONFINEMENT REGIME, Applied physics letters, 73(8), 1998, pp. 1107-1109

SHALLOW DONORS IN EPITAXIAL GAN

Authors: FISCHER S VOLM D KOVALEV D AVERBOUKH B GRABER A ALT HC MEYER BK

Citation: S. Fischer et al., SHALLOW DONORS IN EPITAXIAL GAN, Materials science & engineering. B, Solid-state materials for advanced technology, 43(1-3), 1997, pp. 192-195

NONLINEAR-OPTICAL EFFECTS IN POROUS SILICON - PHOTOLUMINESCENCE SATURATION AND OPTICALLY INDUCED POLARIZATION ANISOTROPY

Authors: EFROS AL ROSEN M AVERBOUKH B KOVALEV D BENCHORIN M KOCH F

Citation: Al. Efros et al., NONLINEAR-OPTICAL EFFECTS IN POROUS SILICON - PHOTOLUMINESCENCE SATURATION AND OPTICALLY INDUCED POLARIZATION ANISOTROPY, Physical review. B, Condensed matter, 56(7), 1997, pp. 3875-3884

DYNAMICAL STUDY OF THE YELLOW LUMINESCENCE BAND IN GAN

Authors: HOFFMANN A ECKEY L MAXIM P HOLST JC HEITZ R HOFMANN DM KOVALEV D STEVDE G VOLM D MEYER BK DETCHPROHM T HIRAMATSU K AMANO H AKASAKI I

Citation: A. Hoffmann et al., DYNAMICAL STUDY OF THE YELLOW LUMINESCENCE BAND IN GAN, Solid-state electronics, 41(2), 1997, pp. 275-278

SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY

Authors: KOVALEV D BENCHORIN M DIENER J AVERBOUKH B POLISSKI G KOCH F

Citation: D. Kovalev et al., SYMMETRY OF THE ELECTRONIC STATES OF SI NANOCRYSTALS - AN EXPERIMENTAL-STUDY, Physical review letters, 79(1), 1997, pp. 119-122

CONTROL OF SILICON NANOCRYSTALLITE SHAPE ASYMMETRY AND ORIENTATION ANISOTROPY BY LIGHT-ASSISTED ANODIZATION

Authors: POLISSKI G AVERBOUKH B KOVALEV D KOCH F

Citation: G. Polisski et al., CONTROL OF SILICON NANOCRYSTALLITE SHAPE ASYMMETRY AND ORIENTATION ANISOTROPY BY LIGHT-ASSISTED ANODIZATION, Applied physics letters, 70(9), 1997, pp. 1116-1118

FREE-EXCITON EMISSION IN GAN

Authors: KOVALEV D AVERBOUKH B VOLM D MEYER BK AMANO H AKASAKI I

Citation: D. Kovalev et al., FREE-EXCITON EMISSION IN GAN, Physical review. B, Condensed matter, 54(4), 1996, pp. 2518-2522

EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS

Authors: VOLM D OETTINGER K STREIBL T KOVALEV D BENCHORIN M DIENER J MEYER BK MAJEWSKI J ECKEY L HOFFMANN A AMANO H AKASAKI I HIRAMATSU K DETCHPROHM T

Citation: D. Volm et al., EXCITON FINE-STRUCTURE IN UNDOPED GAN EPITAXIAL-FILMS, Physical review. B, Condensed matter, 53(24), 1996, pp. 16543-16550

POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY

Authors: KOVALEV D BENCHORIN M DIENER J KOCH F KUX A EFROS AL ROSEN M GIPPIUS NA TIKHODEEV SG

Citation: D. Kovalev et al., POLARIZATION OF POROUS SILICON PHOTOLUMINESCENCE - ALIGNMENT AND BUILT-IN ANISOTROPY, Thin solid films, 276(1-2), 1996, pp. 120-122

POLARIZATION MEMORY INDUCED BY POLARIZED LIGHT-ASSISTED ANODIZATION OF N-TYPE SI

Authors: POLISSKI G ANDRIANOV AV KOVALEV D KOCH F

Citation: G. Polisski et al., POLARIZATION MEMORY INDUCED BY POLARIZED LIGHT-ASSISTED ANODIZATION OF N-TYPE SI, Thin solid films, 276(1-2), 1996, pp. 235-237

INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI

Authors: BENCHORIN M AVERBOUKH B KOVALEV D POLISSKI G KOCH F

Citation: M. Benchorin et al., INFLUENCE OF QUANTUM CONFINEMENT ON THE CRITICAL-POINTS OF THE BAND-STRUCTURE OF SI, Physical review letters, 77(4), 1996, pp. 763-766

OPTICALLY INDUCED POLARIZATION ANISOTROPY IN POROUS SI

Authors: KOVALEV D AVERBOUKH B BENCHORIN M KOCH F EFROS AL ROSEN M

Citation: D. Kovalev et al., OPTICALLY INDUCED POLARIZATION ANISOTROPY IN POROUS SI, Physical review letters, 77(10), 1996, pp. 2089-2092

POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON

Authors: KOCH F KOVALEV D AVERBOUKH B POLISSKI G BENCHORIN M

Citation: F. Koch et al., POLARIZATION PHENOMENA IN THE OPTICAL-PROPERTIES OF POROUS SILICON, Journal of luminescence, 70, 1996, pp. 320-332

THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON

Authors: KOVALEV D POLISSKI G BENCHORIN M DIENER J KOCH F

Citation: D. Kovalev et al., THE TEMPERATURE-DEPENDENCE OF THE ABSORPTION-COEFFICIENT OF POROUS SILICON, Journal of applied physics, 80(10), 1996, pp. 5978-5983

PROPERTIES OF THE YELLOW LUMINESCENCE IN UNDOPED GAN EPITAXIAL LAYERS

Authors: HOFMANN DM KOVALEV D STEUDE G MEYER BK HOFFMANN A ECKEY L HEITZ R DETCHPROM T AMANO H AKASAKI I

Citation: Dm. Hofmann et al., PROPERTIES OF THE YELLOW LUMINESCENCE IN UNDOPED GAN EPITAXIAL LAYERS, Physical review. B, Condensed matter, 52(23), 1995, pp. 16702-16706

LUMINESCENCE ENHANCEMENT BY ELECTROCHEMICAL ETCHING OF SIC(6H)

Authors: PETROVAKOCH V SRESELI O POLISSKI G KOVALEV D MUSCHIK T KOCH F

Citation: V. Petrovakoch et al., LUMINESCENCE ENHANCEMENT BY ELECTROCHEMICAL ETCHING OF SIC(6H), Thin solid films, 255(1-2), 1995, pp. 107-110

SLOW LUMINESCENCE FROM TRAPPED CHARGES IN OXIDIZED POROUS SILICON

Authors: KUX A KOVALEV D KOCH F

Citation: A. Kux et al., SLOW LUMINESCENCE FROM TRAPPED CHARGES IN OXIDIZED POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 143-145

POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION

Authors: KOVALEV D BENCHORIN M DIENER J KOCH F EFROS AL ROSEN M GIPPIUS NA TIKHODEEV SG

Citation: D. Kovalev et al., POROUS SI ANISOTROPY FROM PHOTOLUMINESCENCE POLARIZATION, Applied physics letters, 67(11), 1995, pp. 1585-1587

TIME-DELAYED LUMINESCENCE FROM OXIDIZED POROUS SILICON AFTER ULTRAVIOLET EXCITATION

Authors: KUX A KOVALEV D KOCH F

Citation: A. Kux et al., TIME-DELAYED LUMINESCENCE FROM OXIDIZED POROUS SILICON AFTER ULTRAVIOLET EXCITATION, Applied physics letters, 66(1), 1995, pp. 49-51

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