Citation: G. Beshkov et al., XPS STUDY OF PLASMA-TREATED CARBON LAYERS DEPOSITED ON POROUS SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 1-4
Citation: A. Toneva et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF POST-HYDROGENATED HOMOGENEOUS CHEMICALLY VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 75(2), 1997, pp. 331-339
Authors:
MARINOVA T
KAKANAKOVAGEORGIEVA A
KRASTEV V
KAKANAKOV R
NESHEV M
KASSAMAKOVA L
NOBLANC O
ARNODO C
CASSETTE S
BRYLINSKI C
PECZ B
RADNOCZI G
VINCZE G
Citation: T. Marinova et al., NICKEL-BASED OHMIC CONTACTS ON SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 223-226
Authors:
KALITZOVA M
KARPUZOV D
MARINOVA T
KRASTEV V
VITALI G
PIZZUTO C
ZOLLO G
Citation: M. Kalitzova et al., INP CRYSTALS-ION IMPLANTATION AND LASER ANNEALING - RHEED, XPS AND COMPUTER-SIMULATION STUDIES, Applied surface science, 115(1), 1997, pp. 1-9
Authors:
DRAGIEVA I
STOYNOV Z
NIKOLAEVA I
KRASTEV V
Citation: I. Dragieva et al., IMPEDANCE SPECTROSCOPY AND XPS COMPARATIVE INVESTIGATIONS OF THE STATE OF BORON ATOMS IN AN AMORPHOUS METALLIC MATRIX, Journal of solid state chemistry, 133(1), 1997, pp. 273-278
Authors:
MARINOVA T
YAKIMOVA R
KRASTEV V
HALLIN C
JANZEN E
Citation: T. Marinova et al., INTERFACIAL REACTIONS AND OHMIC CONTACT FORMATION IN THE NI AL-6H SICSYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3252-3256
Citation: M. Kuneva et V. Krastev, PROTON-EXCHANGED LINBO3 - XPS, IR AND OPTICAL STUDY, Applied physics A: Materials science & processing, 63(4), 1996, pp. 391-395
Authors:
KRASTEV V
STOYCHEVA M
LEFTEROVA E
DRAGIEVA I
STOYNOV Z
Citation: V. Krastev et al., XPS, TEM AND SAD INVESTIGATIONS OF NANOSIZED COXBYHZ PARTICLES OBTAINED BY 2 DIFFERENT BOROHYDRIDE METHODS, Journal of alloys and compounds, 240(1-2), 1996, pp. 186-192
Authors:
MARINOVA T
KRASTEV V
HALLIN C
YAKIMOVA R
JANZEN E
Citation: T. Marinova et al., INTERFACE CHEMISTRY AND ELECTRIC CHARACTERIZATION OF NICKEL METALLIZATION ON 6H-SIC, Applied surface science, 99(2), 1996, pp. 119-125
Authors:
TZENOV N
DIMOVAMALINOVSKA D
MARINOVA T
KRASTEV V
TSVETKOVA T
Citation: N. Tzenov et al., MODIFICATION OF MAGNETRON-SPUTTERED A-SI1-XCX-H FILMS BY IMPLANTATIONOF GE+, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 342-347
Authors:
DIMOVAMALINOVSKA D
KAMENOVA M
SENDOVAVASSILEVA M
MARINOVA T
KRASTEV V
Citation: D. Dimovamalinovska et al., PHOTOLUMINESCENCE AND CHEMICAL BONDING IN POROUS SILICON LAYERS - DEPENDENCE ON THE P CONCENTRATION IN THE SI SUBSTRATE, Thin solid films, 276(1-2), 1996, pp. 248-252
Authors:
DIMOVAMALINOVSKA D
JANVIER C
SENDOVAVASSILEVA M
KAMENOVA M
MARINOVA T
KRASTEV V
Citation: D. Dimovamalinovska et al., CORRELATION BETWEEN THE PHOTOLUMINESCENCE AND CHEMICAL BONDING IN POROUS SILICON, Solid state communications, 99(9), 1996, pp. 641-644
Authors:
TZENOV N
DIMOVAMALINOVSKA D
MARINOVA T
KRASTEV V
TSVETKOVA T
Citation: N. Tzenov et al., X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF SN-SI1-XCX-H THIN-FILMS( IMPLANTED A), Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 165-169
Authors:
AMBROSI G
BABUCCI E
BATTISTON R
BIASINI M
EASO S
KRASTEV V
PAULUZZI M
SANTOCCHIA A
DIBITONTO D
PENNINGTON T
SUBHANI K
BURGER WJ
Citation: G. Ambrosi et al., THE DEVELOPMENT OF THE KAPTON SIGNAL ROUTER FOR THE SILICON MICROSTRIPS DETECTOR OF L3, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 361(1-2), 1995, pp. 97-100
Authors:
DIMOVAMALINOVSKA D
SENDOVAVASSILEVA M
MARINOVA T
KRASTEV V
KAMENOVA M
TZENOV N
Citation: D. Dimovamalinovska et al., CORRELATION BETWEEN THE PHOTOLUMINESCENCE AND CHEMICAL BONDING IN POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 191-195
Authors:
BALABANOV S
SKORDEVA E
KRASTEV V
MARINOVA T
DJAKOV A
ANGELOV C
Citation: S. Balabanov et al., PECULIARITIES OF THE DC CONDUCTIVITY OF THIN AMORPHOUS AS-SE LAYERS AFTER C+ IMPLANTATION, Physica status solidi. a, Applied research, 151(1), 1995, pp. 143-149
Authors:
BALABANOV S
TSVETKOVA T
NANEV K
SKORDEVA E
MARINOVA T
KRASTEV V
AMOV B
ANGELOV C
Citation: S. Balabanov et al., FORMATION OF CARBON AGGREGATES IN ION-IMPLANTED AMORPHOUS AS-SE, Journal of non-crystalline solids, 193, 1995, pp. 482-485
Citation: Ps. Gladkov et al., STUDY OF A NEW CHEMICAL ETCHANT FOR GASB (100)-SUBSTRATE AND (111)-SUBSTRATE PREPARATION FOR EPITAXIAL-GROWTH, Journal of the Electrochemical Society, 142(7), 1995, pp. 2413-2417
Authors:
AMBROSI G
BABUCCI E
BATTISTON R
BIASINI M
EASO S
KRASTEV V
PAULUZZI M
SANTOCCHIA A
BAY A
BURGER WJ
EXTERMANN P
PERRIN E
SUSINNO G
BROOKS M
KAPUSTINSKY JS
KINNISON WW
LEE DM
MILLS GB
THOMPSON TC
DIBITONTO D
PENNINGTON T
SUBHANI K
HAUVILLER C
Citation: G. Ambrosi et al., DESIGN AND CONSTRUCTION OF DOUBLE-SIDED SILICON LADDERS FOR THE L3 MICROVERTEX DETECTOR, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 344(1), 1994, pp. 133-136