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Results: 1-11 |
Results: 11
SIC FLAME SENSORS FOR GAS-TURBINE CONTROL-SYSTEMS
Authors: BROWN DM DOWNEY E KRETCHMER J MICHON G SHU E SCHNEIDER D
Citation: Dm. Brown et al., SIC FLAME SENSORS FOR GAS-TURBINE CONTROL-SYSTEMS, Solid-state electronics, 42(5), 1998, pp. 755-760
COMPARISON OF ALUMINUM-IMPLANTED AND BORON-IMPLANTED VERTICAL 6H-SIC P+N JUNCTION DIODES
Authors: RAMUNGUL N KHEMKA V TYAGI R CHOW TP GHEZZO M NEUDECK PG KRETCHMER J HENNESSY W BROWN DM
Citation: N. Ramungul et al., COMPARISON OF ALUMINUM-IMPLANTED AND BORON-IMPLANTED VERTICAL 6H-SIC P+N JUNCTION DIODES, Solid-state electronics, 42(1), 1998, pp. 17-22
MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/
Authors: GARDNER JA EDWARDS A RAO MV PAPANICOLAOU N KELNER G HOLLAND OW CAPANO MA GHEZZO M KRETCHMER J
Citation: Ja. Gardner et al., MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/, Journal of applied physics, 83(10), 1998, pp. 5118-5124
SILICON-CARBIDE MOSFET INTEGRATED-CIRCUIT TECHNOLOGY
Authors: BROWN DM DOWNEY E GHEZZO M KRETCHMER J KRISHNAMURTHY V HENNESY W MICHON G
Citation: Dm. Brown et al., SILICON-CARBIDE MOSFET INTEGRATED-CIRCUIT TECHNOLOGY, Physica status solidi. a, Applied research, 162(1), 1997, pp. 459-479
NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE
Authors: DWIGHT D RAO MV HOLLAND OW KELNER G CHI PH KRETCHMER J GHEZZO M
Citation: D. Dwight et al., NITROGEN AND ALUMINUM IMPLANTATION IN HIGH-RESISTIVITY SILICON-CARBIDE, Journal of applied physics, 82(11), 1997, pp. 5327-5333
PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC
Authors: RAO MV GARDNER JA CHI PH HOLLAND OW KELNER G KRETCHMER J GHEZZO M
Citation: Mv. Rao et al., PHOSPHORUS AND BORON IMPLANTATION IN 6H-SIC, Journal of applied physics, 81(10), 1997, pp. 6635-6641
ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC
Authors: GARDNER J RAO MV HOLLAND OW KELNER G SIMONS DS CHI PH ANDREWS JM KRETCHMER J GHEZZO M
Citation: J. Gardner et al., ELEVATED-TEMPERATURE NITROGEN IMPLANTS IN 6H-SIC, Journal of electronic materials, 25(5), 1996, pp. 885-892
AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC
Authors: RAO MV GRIFFITHS P GARDNER J HOLLAND OW GHEZZO M KRETCHMER J KELNER G FREITAS JA
Citation: Mv. Rao et al., AL, AL C AND AL SI IMPLANTATIONS IN 6H-SIC, Journal of electronic materials, 25(1), 1996, pp. 75-80
SILICON-CARBIDE MOSFET TECHNOLOGY
Authors: BROWN DM DOWNEY E GHEZZO M KRETCHMER J KRISHNAMURTHY V HENNESSY W MICHON G
Citation: Dm. Brown et al., SILICON-CARBIDE MOSFET TECHNOLOGY, Solid-state electronics, 39(11), 1996, pp. 1531-1542
SIC MOS INTERFACE CHARACTERISTICS
Authors: BROWN DM GHEZZO M KRETCHMER J DOWNEY E PIMBLEY J PALMOUR J
Citation: Dm. Brown et al., SIC MOS INTERFACE CHARACTERISTICS, I.E.E.E. transactions on electron devices, 41(4), 1994, pp. 618-620
BORON-IMPLANTED 6H-SIC DIODES
Authors: GHEZZO M BROWN DM DOWNEY E KRETCHMER J KOPANSKI JJ
Citation: M. Ghezzo et al., BORON-IMPLANTED 6H-SIC DIODES, Applied physics letters, 63(9), 1993, pp. 1206-1208
Risultati: 1-11 |