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Results: 1-25 | 26-50 | 51-51
Results: 1-25/51
2-DIMENSIONAL PN-JUNCTION DELINEATION AND INDIVIDUAL DOPANT IDENTIFICATION USING SCANNING TUNNELING MICROSCOPY SPECTROSCOPY/
Authors: CHAO KJ SMITH AR MCDONALD AJ KWONG DL STREETMAN BG SHIH CK
Citation: Kj. Chao et al., 2-DIMENSIONAL PN-JUNCTION DELINEATION AND INDIVIDUAL DOPANT IDENTIFICATION USING SCANNING TUNNELING MICROSCOPY SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 453-456
REDUCTION OF RIE-DAMAGE BY N2O-ANNEAL OF THERMAL GATE OXIDE
Authors: JOSHI AB MANN RA CHUNG L CHO TH MIN BW KWONG DL
Citation: Ab. Joshi et al., REDUCTION OF RIE-DAMAGE BY N2O-ANNEAL OF THERMAL GATE OXIDE, IEEE transactions on semiconductor manufacturing, 11(3), 1998, pp. 495-500
ULTRATHIN TA2O5 FILM GROWTH BY CHEMICAL-VAPOR-DEPOSITION OF TA(N(CH3)(2))(5) AND O-2 ON BARE AND SIOXNY-PASSIVATED SI(100) FOR GATE DIELECTRIC APPLICATIONS
Authors: SON KA MAO AY KIM BY LIU F PYLANT ED HESS DA WHITE JM KWONG DL ROBERTS DA VRTIS RN
Citation: Ka. Son et al., ULTRATHIN TA2O5 FILM GROWTH BY CHEMICAL-VAPOR-DEPOSITION OF TA(N(CH3)(2))(5) AND O-2 ON BARE AND SIOXNY-PASSIVATED SI(100) FOR GATE DIELECTRIC APPLICATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1670-1675
BORON SEGREGATION IN AS-IMPLANTED SI CAUSED BY ELECTRIC-FIELD AND TRANSIENT ENHANCED DIFFUSION
Authors: CHANG RD CHOI PS KWONG DL WRISTERS D CHU PK
Citation: Rd. Chang et al., BORON SEGREGATION IN AS-IMPLANTED SI CAUSED BY ELECTRIC-FIELD AND TRANSIENT ENHANCED DIFFUSION, Applied physics letters, 72(14), 1998, pp. 1709-1711
CHEMICAL-VAPOR-DEPOSITION OF ULTRATHIN TA2O5 FILMS USING TA[N(CH3)(2)](5)
Authors: SON KA MAO AY SUN YM KIM BY LIU F KAMATH A WHITE JM KWONG DL ROBERTS DA VRTIS RN
Citation: Ka. Son et al., CHEMICAL-VAPOR-DEPOSITION OF ULTRATHIN TA2O5 FILMS USING TA[N(CH3)(2)](5), Applied physics letters, 72(10), 1998, pp. 1187-1189
DEVICE PERFORMANCE AND RELIABILITY OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHEMICAL-VAPOR-DEPOSITED GATE OXIDES
Authors: AHN JH KWONG DL
Citation: Jh. Ahn et Dl. Kwong, DEVICE PERFORMANCE AND RELIABILITY OF P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHEMICAL-VAPOR-DEPOSITED GATE OXIDES, JPN J A P 1, 36(7A), 1997, pp. 4225-4229
SURFACE-CHEMISTRY OF THE N-CONTAINING PRECURSOR DIMETHYLHYDRAZINE ON CU
Authors: SUN YM WHITE JM KAMATH A KWONG DL
Citation: Ym. Sun et al., SURFACE-CHEMISTRY OF THE N-CONTAINING PRECURSOR DIMETHYLHYDRAZINE ON CU, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 899-904
IMPACT OF BORON PENETRATION ON GATE OXIDE RELIABILITY AND DEVICE LIFETIME IN P-POLY PMOSFETS()
Authors: KIM BY LIU IM LUAN HF GARDNER M FULFORD J KWONG DL
Citation: By. Kim et al., IMPACT OF BORON PENETRATION ON GATE OXIDE RELIABILITY AND DEVICE LIFETIME IN P-POLY PMOSFETS(), Microelectronic engineering, 36(1-4), 1997, pp. 313-316
OXIDATION OF SI(100) IN NITRIC-OXIDE AT LOW-PRESSURES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY
Authors: KAMATH A KWONG DL SUN YM BLASS PM WHALEY S WHITE JM
Citation: A. Kamath et al., OXIDATION OF SI(100) IN NITRIC-OXIDE AT LOW-PRESSURES - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY, Applied physics letters, 70(1), 1997, pp. 63-65
THE DETECTION OF CLINICALLY OCCULT NASOPHARYNGEAL, CARCINOMA IN PATIENTS FOLLOWING RADIOTHERAPY - AN ANALYSIS OF 69 PATIENTS
Authors: NICHOLLS JM CHUA D CHUI PM KWONG DL
Citation: Jm. Nicholls et al., THE DETECTION OF CLINICALLY OCCULT NASOPHARYNGEAL, CARCINOMA IN PATIENTS FOLLOWING RADIOTHERAPY - AN ANALYSIS OF 69 PATIENTS, Journal of Laryngology and Otology, 110(5), 1996, pp. 496-499
THE VIABILITY OF GEH4-BASED IN-SITU CLEAN FOR LOW-TEMPERATURE SILICONEPITAXIAL-GROWTH
Authors: WANG CL UNNIKRISHNAN S KIM BY KWONG DL TASCH AF
Citation: Cl. Wang et al., THE VIABILITY OF GEH4-BASED IN-SITU CLEAN FOR LOW-TEMPERATURE SILICONEPITAXIAL-GROWTH, Journal of the Electrochemical Society, 143(7), 1996, pp. 2387-2391
HIGHLY RELIABLE CHEMICAL-VAPOR-DEPOSITED STACKED OXYNITRIDE GATE DIELECTRICS FABRICATED BY IN-SITU RAPID THERMAL MULTIPROCESSING
Authors: YAN J HAN LK KWONG DL
Citation: J. Yan et al., HIGHLY RELIABLE CHEMICAL-VAPOR-DEPOSITED STACKED OXYNITRIDE GATE DIELECTRICS FABRICATED BY IN-SITU RAPID THERMAL MULTIPROCESSING, Applied physics letters, 68(19), 1996, pp. 2666-2668
DEGRADATION OF OXYNITRIDE GATE DIELECTRIC RELIABILITY DUE TO BORON-DIFFUSION
Authors: WRISTERS D HAN LK CHEN T WANG HH KWONG DL ALLEN M FULFORD J
Citation: D. Wristers et al., DEGRADATION OF OXYNITRIDE GATE DIELECTRIC RELIABILITY DUE TO BORON-DIFFUSION, Applied physics letters, 68(15), 1996, pp. 2094-2096
EVOLUTION OF SILICON SURFACE-MORPHOLOGY DURING H-2 ANNEALING IN A RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION SYSTEM
Authors: WANG CL UNNIKRISHNAN S KIM BY KWONG DL TASCH AF
Citation: Cl. Wang et al., EVOLUTION OF SILICON SURFACE-MORPHOLOGY DURING H-2 ANNEALING IN A RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION SYSTEM, Applied physics letters, 68(1), 1996, pp. 108-110
FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING
Authors: HAN LK YOON GW KIM J YAN J KWONG DL
Citation: Lk. Han et al., FORMATION OF HIGH-QUALITY ULTRATHIN OXIDE NITRIDE (ON) STACKED CAPACITORS BY IN-SITU MULTIPLE RAPID THERMAL-PROCESSING, IEEE electron device letters, 16(8), 1995, pp. 348-350
HIGHLY SUPPRESSED BORON PENETRATION IN NO-NITRIDED SIO2 FOR P(-POLYSILICON GATED MOS DEVICE APPLICATIONS())
Authors: HAN LK WRISTERS D YAN J BHAT M KWONG DL
Citation: Lk. Han et al., HIGHLY SUPPRESSED BORON PENETRATION IN NO-NITRIDED SIO2 FOR P(-POLYSILICON GATED MOS DEVICE APPLICATIONS()), IEEE electron device letters, 16(7), 1995, pp. 319-321
RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS
Authors: HAN LK BHAT M WRISTERS D WANG HH KWONG DL
Citation: Lk. Han et al., RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS, Microelectronic engineering, 28(1-4), 1995, pp. 89-96
GROWTH-KINETICS OF OXIDES DURING FURNACE OXIDATION OF SI IN N2O AMBIENT
Authors: BHAT M JIA HH KWONG DL
Citation: M. Bhat et al., GROWTH-KINETICS OF OXIDES DURING FURNACE OXIDATION OF SI IN N2O AMBIENT, Journal of applied physics, 78(4), 1995, pp. 2767-2774
ELECTRICAL-PROPERTIES AND RELIABILITY OF MOSFETS WITH RAPID THERMAL NO-NITRIDED SIO2 GATE DIELECTRICS
Authors: BHAT M WRISTERS DJ HAN LK YAN J FULFORD HJ KWONG DL
Citation: M. Bhat et al., ELECTRICAL-PROPERTIES AND RELIABILITY OF MOSFETS WITH RAPID THERMAL NO-NITRIDED SIO2 GATE DIELECTRICS, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 907-914
HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT
Authors: HAN LK KIM J YOON GW YAN J KWONG DL
Citation: Lk. Han et al., HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT, Electronics Letters, 31(14), 1995, pp. 1196-1198
STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN SCALED SIO2
Authors: HAN LK WANG HH YAN J KWONG DL
Citation: Lk. Han et al., STUDY OF STRESS-INDUCED LEAKAGE CURRENT IN SCALED SIO2, Electronics Letters, 31(14), 1995, pp. 1202-1204
EFFECTS OF CHEMICAL-COMPOSITION ON THE ELECTRICAL-PROPERTIES OF NO-NITRIDED SIO2
Authors: BHAT M HAN LK WRISTERS D YAN J KWONG DL FULFORD J
Citation: M. Bhat et al., EFFECTS OF CHEMICAL-COMPOSITION ON THE ELECTRICAL-PROPERTIES OF NO-NITRIDED SIO2, Applied physics letters, 66(10), 1995, pp. 1225-1227
FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT
Authors: YOON GW LO GQ KIM J HAN LK KWONG DL
Citation: Gw. Yoon et al., FORMATION OF HIGH-QUALITY STORAGE CAPACITOR DIELECTRICS BY IN-SITU RAPID THERMAL REOXIDATION OF SI3N4 FILMS IN N2O AMBIENT, IEEE electron device letters, 15(8), 1994, pp. 266-268
EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS
Authors: HAN LK YOON GW KWONG DL MATHEWS VK FAZAN PC
Citation: Lk. Han et al., EFFECTS OF POSTDEPOSITION ANNEALING ON THE ELECTRICAL-PROPERTIES AND RELIABILITY OF ULTRATHIN CHEMICAL-VAPOR-DEPOSITED TA2O5 FILMS, IEEE electron device letters, 15(8), 1994, pp. 280-282
MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES
Authors: BHAT M KIM J YAN J YOON GW HAN LK KWONG DL
Citation: M. Bhat et al., MOS CHARACTERISTICS OF ULTRATHIN NO-GROWN OXYNITRIDES, IEEE electron device letters, 15(10), 1994, pp. 421-423
Risultati: 1-25 | 26-50 | 51-51