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Results: 1-19 |

Results: 19

Rapid determination of "slow" states and "fast" states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors

Authors: Duval, E Soliman, L Lheurette, E Ketata, K Benzohra, M Duprat, C Ketata, M

Citation: E. Duval et al., Rapid determination of "slow" states and "fast" states densities using thermally stimulated conductance spectroscopy on metal-oxide semiconductor capacitors, MAT SC S PR, 4(1-3), 2001, pp. 141-143

Improvement of oxide thickness determination on MOS structures using capacitance-voltage measurements at high frequencies

Authors: Soliman, L Duval, E Benzohra, M Lheurette, E Ketata, K Ketata, M

Citation: L. Soliman et al., Improvement of oxide thickness determination on MOS structures using capacitance-voltage measurements at high frequencies, MAT SC S PR, 4(1-3), 2001, pp. 163-166

Comparative models for diffusion of Be in InGaAs/InP heterostructures

Authors: Koumetz, S Ketata, K Ihaddadene, M Martin, P Ketata, M Dubois, C

Citation: S. Koumetz et al., Comparative models for diffusion of Be in InGaAs/InP heterostructures, J PHYS-COND, 13(22), 2001, pp. L483-L486

Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

Authors: Dusch, A Marcon, J Masmoudi, K Olivie, F Benzohra, M Ketata, K Ketata, M

Citation: A. Dusch et al., Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation, MAT SCI E B, 80(1-3), 2001, pp. 65-67

A model for diffusion of beryllium in InGaAs/InP heterostructures

Authors: Ihaddadene, M Koumetz, S Latry, O Ketata, K Ketata, M Dubois, C

Citation: M. Ihaddadene et al., A model for diffusion of beryllium in InGaAs/InP heterostructures, MAT SCI E B, 80(1-3), 2001, pp. 73-76

Determination of slow- and fast-state distributions using high-temperatureconductance spectroscopy on MOS structures

Authors: Duval, E Lheurette, E Ketata, K Ketata, M

Citation: E. Duval et al., Determination of slow- and fast-state distributions using high-temperatureconductance spectroscopy on MOS structures, SEMIC SCI T, 16(10), 2001, pp. L57-L63

Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy

Authors: Koumetz, S Valet, O Marcon, J Ketata, K Ketata, M

Citation: S. Koumetz et al., Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy, MAT SCI E B, 71, 2000, pp. 171-174

Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy

Authors: Koumetz, S Ketata, K Ihaddadene, M Joubert, E Ketata, M Dubois, C

Citation: S. Koumetz et al., Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy, J CRYST GR, 220(1-2), 2000, pp. 46-50

A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism

Authors: Marcon, J Koumetz, S Ketata, K Ketata, M Caputo, JG

Citation: J. Marcon et al., A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism, EPJ-APPL PH, 8(1), 1999, pp. 7-18

The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE undernonequilibrium conditions

Authors: Ketata, M Ketata, K Koumetz, S Marcon, J Dubois, C

Citation: M. Ketata et al., The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE undernonequilibrium conditions, EPJ-APPL PH, 8(1), 1999, pp. 19-24

Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE

Authors: Koumetz, S Ketata, K Ketata, M Marcon, J

Citation: S. Koumetz et al., Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE, COMP MAT SC, 15(1), 1999, pp. 63-68

Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing

Authors: Ketata, K Ketata, M Koumetz, S Marcon, J

Citation: K. Ketata et al., Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing, J ALLOY COM, 285(1-2), 1999, pp. L1-L4

Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces

Authors: Koumetz, S Marcon, J Gautier, S Ketata, K Ketata, M Dubois, C

Citation: S. Koumetz et al., Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaAs/InGaAsP, InGaAs/InP heterointerfaces, MAT SCI E B, 66(1-3), 1999, pp. 55-57

Modeling the diffusion of Be in InGaAs/InGaAsP epitaxial heterostructures under non-equilibrium point defect conditions

Authors: Ketata, K Ketata, M Koumetz, S Marcon, J Valet, O

Citation: K. Ketata et al., Modeling the diffusion of Be in InGaAs/InGaAsP epitaxial heterostructures under non-equilibrium point defect conditions, PHYSICA B, 274, 1999, pp. 823-826

Secondary defect profile related to low energy implanted boron measured upto 3.5 mu m depth into Si-substrates

Authors: Soliman, L Benzohra, M Masmoudi, M Ketata, K Boussaid, F Martinez, A Ketata, M

Citation: L. Soliman et al., Secondary defect profile related to low energy implanted boron measured upto 3.5 mu m depth into Si-substrates, J ELEC MAT, 28(12), 1999, pp. 1353-1357

Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy

Authors: Ketata, K Ketata, M Koumetz, S Marcon, J

Citation: K. Ketata et al., Beryllium diffusion mechanisms in InGaAs compounds grown by gas source molecular beam epitaxy, EUROPH LETT, 45(3), 1999, pp. 348-353

Modelling and simulation of beryllium diffusion in InGaAs compounds grown by gas source molecular beam epitaxy

Authors: Ketata, K Ketata, M Koumetz, S Marcon, J Masmoudi, M

Citation: K. Ketata et al., Modelling and simulation of beryllium diffusion in InGaAs compounds grown by gas source molecular beam epitaxy, MODEL SIM M, 6(6), 1998, pp. 747-753

A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy

Authors: Koumetz, S Ketata, K Ketata, M Marcon, J

Citation: S. Koumetz et al., A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy, J PHYS D, 31(24), 1998, pp. 3421-3427

Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy

Authors: Ketata, M Ketata, K Koumetz, S Martin, P Marcon, J Dubois, C

Citation: M. Ketata et al., Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy, J CRYST GR, 194(3-4), 1998, pp. 297-300

Risultati: 1-19 |