Authors:
Lee, HM
Liu, CJ
Hsu, CW
Liang, MS
King, YC
Hsu, CCH
Citation: Hm. Lee et al., New trap-assisted band-to-band tunneling induced gate current model for p-channel metal-oxide-semiconductor field effect transistors with sub-3 nm oxides, JPN J A P 1, 40(3A), 2001, pp. 1218-1221
Authors:
Chou, AHF
Yang, ECS
Liu, CJ
Pong, HH
Liaw, MC
Chao, TS
King, YC
Hwang, HL
Hsu, CCH
Citation: Ahf. Chou et al., Comprehensive study on a novel bidirectional tunneling program/erase NOR-type (BiNOR) 3-D flash memory cell, IEEE DEVICE, 48(7), 2001, pp. 1386-1393
Citation: Yc. King et al., Optimization of sub-5-nm multiple-thickness gate oxide formed by oxygen implantation, IEEE DEVICE, 48(6), 2001, pp. 1279-1281
Citation: Ahf. Chou et al., Comprehensive study of a new self-convergent programming scheme for split gate flash memory, JPN J A P 1, 39(4B), 2000, pp. 2219-2222