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Results:
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Results: 21
Authors:
Komarov, AF
Komarov, FF
Zukowski, P
Karwat, C
Kamarou, AA
Citation: Af. Komarov et al., Simulation of two-beam ion implantation in the multilayer and multicomponent targets, VACUUM, 63(4), 2001, pp. 495-499
Authors:
Komarov, FF
Kamyshan, AS
Mironov, AM
Lagutin, AE
Martynov, IS
Citation: Ff. Komarov et al., Formation of device isolation in GaAs with polyenergetic ion implantation, VACUUM, 63(4), 2001, pp. 577-579
Authors:
Kulik, M
Komarov, FF
Maczka, D
Citation: M. Kulik et al., RBS and channeling studies of GaAs implanted with In+ ions, VACUUM, 63(4), 2001, pp. 755-759
Authors:
Ulyashin, AG
Ivanov, AI
Job, R
Fahrner, WR
Frantskevich, AV
Komarov, FF
Kamyshan, AC
Citation: Ag. Ulyashin et al., The hydrogen gettering at post-implantation hydrogen plasma treatments of helium- and hydrogen implanted Czochralski silicon, MAT SCI E B, 73(1-3), 2000, pp. 64-68
Authors:
Dudchik, YI
Kolchevsky, NN
Komarov, FF
Kohmura, Y
Awaji, M
Suzuki, Y
Ishikava, T
Citation: Yi. Dudchik et al., Glass capillary X-ray lens: fabrication technique and ray tracing calculations, NUCL INST A, 454(2-3), 2000, pp. 512-519
Authors:
Zuk, J
Krzyzanowska, H
Kulik, M
Liskiewicz, J
Maczka, D
Akimov, AA
Komarov, FF
Citation: J. Zuk et al., Raman scattering evidence of medium-range order in low fluence Se+-implanted GaAs, NUCL INST B, 168(4), 2000, pp. 521-526
Authors:
Komarov, FF
Leontyev, AV
Grigoryev, VV
Citation: Ff. Komarov et al., Electrophysical properties of organic materials irradiated with accelerated ions, NUCL INST B, 166, 2000, pp. 650-654
Authors:
Gaiduk, PI
Komarov, FF
Wesch, W
Citation: Pi. Gaiduk et al., Damage evolution in crystalline InP during irradiation with swift Xe ions, NUCL INST B, 164, 2000, pp. 377-383
Authors:
Gaiduk, PI
Komarov, FF
Tishkov, VS
Wesch, W
Wendler, E
Citation: Pi. Gaiduk et al., Wurtzite InP formation during swift Xe-ion irradiation, PHYS REV B, 61(23), 2000, pp. 15785-15788
Authors:
Ulyashin, AG
Ivanov, AI
Khorunzhii, IA
Job, R
Fahrner, WR
Komarov, FF
Kamyshan, AC
Citation: Ag. Ulyashin et al., Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon, MAT SCI E B, 58(1-2), 1999, pp. 91-94
Authors:
Kulik, M
Komarov, FF
Maczka, D
Citation: M. Kulik et al., Effect of thermal annealing on optical properties of implanted GaAs, ACT PHY P A, 96(1), 1999, pp. 131-135
Authors:
Komarov, FF
Komarov, AF
Mironov, AM
Citation: Ff. Komarov et al., Influence of initial charge and charge state fluctuations on high-energy ion ranges and track formation, NUCL INST B, 148(1-4), 1999, pp. 159-163
Authors:
Kohmura, Y
Awaji, M
Suzuki, Y
Ishikawa, T
Dudchik, YI
Kolchevsky, NN
Komarov, FF
Citation: Y. Kohmura et al., X-ray focusing test and x-ray imaging test by a microcapillary x-ray lens at an undulator beamline, REV SCI INS, 70(11), 1999, pp. 4161-4167
Authors:
Milchanin, OV
Gaiduk, PI
Komarov, FF
Citation: Ov. Milchanin et al., Interaction between pre-existing dislocations in silicon and hydrogen-induced defects introduced by plasma treatment, NUKLEONIKA, 44(2), 1999, pp. 175-179
Authors:
Gaiduk, PI
Komarov, FF
Tishkov, VS
Herre, O
Wendler, E
Wesch, W
Citation: Pi. Gaiduk et al., Wurtzite InP phase formation during swift Xe ion irradiation, NUKLEONIKA, 44(2), 1999, pp. 189-193
Authors:
Komarov, FF
Kamyshan, AS
Mironov, AM
Citation: Ff. Komarov et al., Formation of horizontal and vertical insulation in semiconductors by ion implantation, NUKLEONIKA, 44(2), 1999, pp. 201-206
Authors:
Komarov, AF
Komarov, FF
Zukowski, P
Karwat, C
Shukan, AL
Citation: Af. Komarov et al., Simulation of the process of high dose ion implantation in solid targets, NUKLEONIKA, 44(2), 1999, pp. 363-367
Authors:
Belyi, VA
Komarov, FF
Citation: Va. Belyi et Ff. Komarov, Model of non-continuous track formation in InP under swift ion implantation, NUKLEONIKA, 44(2), 1999, pp. 375-380
Authors:
Komarov, FF
Zhukovsky, P
Karvat, C
Komarov, AF
Citation: Ff. Komarov et al., Simulation of copper implantation process with high doses of nitrogen ionsand simultaneous carbon layer deposition, DAN BELARUS, 43(6), 1999, pp. 42-44
Authors:
Andreev, AD
Borzdov, VM
Valiev, AA
Zhevnyak, OG
Komarov, FF
Citation: Ad. Andreev et al., The effect of the doping level of a MOSFET substrate on the size of the doping region, DAN BELARUS, 43(1), 1999, pp. 37-40
Authors:
Dudchik, YI
Kol'chevskii, NN
Komarov, FF
Citation: Yi. Dudchik et al., X-ray optical parameters of a microcapillary lens, TECH PHYS L, 24(12), 1998, pp. 954-955
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