Authors:
Huang, JJ
Hattendorf, M
Feng, M
Lambert, DJH
Shelton, BS
Wong, MM
Chowdhury, U
Zhu, TG
Kwon, HK
Dupuis, RD
Citation: Jj. Huang et al., Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors, IEEE ELEC D, 22(4), 2001, pp. 157-159
Authors:
Cho, BK
Kwon, HK
Kim, KS
Kim, YN
Caplan, DJ
Citation: Bk. Cho et al., A two-year longitudinal study of dental caries in permanent first molars of Korean elementary schoolchildren, J PUBL H D, 61(2), 2001, pp. 120-122
Authors:
Kwon, HK
Eiting, CJ
Lambert, DJH
Shelton, BS
Wong, MM
Zhu, TG
Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition, J APPL PHYS, 90(4), 2001, pp. 1817-1822
Authors:
Shelton, BS
Lambert, DJH
Huang, JJ
Wong, MM
Chowdhury, U
Zhu, TG
Kwon, HK
Liliental-Weber, Z
Benarama, M
Feng, M
Dupuis, RD
Citation: Bs. Shelton et al., Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition, IEEE DEVICE, 48(3), 2001, pp. 490-494
Authors:
Huang, JJ
Caruth, D
Feng, M
Lambert, DJH
Shelton, BS
Wong, MM
Chowdhury, U
Zhu, TG
Kwon, HK
Dupuis, RD
Citation: Jj. Huang et al., Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors, ELECTR LETT, 37(6), 2001, pp. 393-395
Authors:
Shelton, BS
Zhu, TG
Wong, MM
Kwon, HK
Eiting, CJ
Lambert, DJH
Turini, SP
Dupuis, RD
Citation: Bs. Shelton et al., Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching andan ultrasonic treatment, EL SOLID ST, 3(2), 2000, pp. 87-89
Authors:
Kim, KY
Kwon, HK
Kwon, SY
Lee, HS
Hur, Y
Bang, JW
Choi, KS
Kwak, SS
Citation: Ky. Kim et al., Differential expression of four sweet potato peroxidase genes in response to abscisic acid and ethephon, PHYTOCHEM, 54(1), 2000, pp. 19-22
Authors:
Kwon, HK
Eiting, CJ
Lambert, DJH
Wong, MM
Shelton, BS
Zhu, TG
Liliental-Weber, Z
Benamura, M
Dupuis, RD
Citation: Hk. Kwon et al., Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 240-245
Authors:
Kwon, HK
Eiting, CJ
Lambert, DJH
Shelton, BS
Wong, MM
Zhu, TG
Dupuis, RD
Citation: Hk. Kwon et al., Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition, J CRYST GR, 221, 2000, pp. 362-367
Authors:
Lambert, DJH
Huang, JJ
Shelton, BS
Wong, MM
Chowdhury, U
Zhu, TG
Kwon, HK
Liliental-Weber, Z
Benarama, M
Feng, M
Dupuis, RD
Citation: Djh. Lambert et al., The growth of AlGaN/GaN heterojunction bipolar transistors by metalorganicchemical vapor deposition, J CRYST GR, 221, 2000, pp. 730-733
Authors:
Shelton, BS
Huang, JJ
Lambert, DJH
Zhu, TG
Wong, MM
Eiting, CJ
Kwon, HK
Feng, M
Dupuis, RD
Citation: Bs. Shelton et al., AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition, ELECTR LETT, 36(1), 2000, pp. 80-81
Authors:
Han, JW
Ahn, SH
Park, SH
Wang, SY
Bae, GU
Seo, DW
Kwon, HK
Hong, S
Lee, HY
Lee, YW
Lee, HW
Citation: Jw. Han et al., Apicidin, a histone deacetylase inhibitor, inhibits proliferation of tumorcells via induction of p21(WAF1/Cip1) and gelsolin, CANCER RES, 60(21), 2000, pp. 6068-6074
Authors:
Kwon, HK
Eiting, CJ
Lambert, DJH
Wong, MM
Dupuis, RD
Liliental-Weber, Z
Benamara, M
Citation: Hk. Kwon et al., Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition, APPL PHYS L, 77(16), 2000, pp. 2503-2505
Authors:
Eiting, CJ
Lambert, DJH
Kwon, HK
Shelton, BS
Wong, MM
Zhu, TG
Dupuis, RD
Citation: Cj. Eiting et al., Characterization of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition, PHYS ST S-B, 216(1), 1999, pp. 193-197
Authors:
Shelton, BS
Wong, MM
Zhu, TG
Eiting, CJ
Lambert, DJH
Lin, DE
Kwon, HK
Dupuis, RD
Citation: Bs. Shelton et al., Dependence of device characteristics on the intrinsic material properties of high-performance AlGaN/GaN HEMTs, PHYS ST S-A, 176(1), 1999, pp. 213-217
Citation: Hk. Kwon et al., Current-induced persistent capacitance in Au/n-In0.08Ga0.92As0.51P0.49 Schottky contacts, APPL PHYS L, 73(23), 1998, pp. 3423-3425