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Results: 1-25/28
Authors:
SURYA C
WANG W
LAI PT
Citation: C. Surya et al., CHARACTERIZATION OF FLICKER NOISE IN N2O AND NH3 NITRIDED MOSFETS DUETO LOW-ENERGY AR+ BACKSURFACE GETTERING, Semiconductor science and technology, 13(7), 1998, pp. 792-795
Authors:
XU JP
LAI PT
HUANG L
LO HB
CHENG YC
Citation: Jp. Xu et al., GREATLY SUPPRESSED STRESS-INDUCED SHIFT OF GIDL IN N2O-BASED N-MOSFETS, Solid-state electronics, 42(9), 1998, pp. 1665-1669
Authors:
LAI PT
XU JP
HUANG L
LO HB
CHENG YC
Citation: Pt. Lai et al., SUPPRESSION OF HOT-CARRIER-INDUCED DEGRADATION IN N-MOSFETS AT LOW-TEMPERATURES BY N2O-NITRIDATION OF GATE OXIDE, Solid-state electronics, 42(4), 1998, pp. 619-626
Authors:
XU JP
LAI PT
CHENG YC
Citation: Jp. Xu et al., A COMPARISON BETWEEN THE INTERFACE PROPERTIES OF N2O-NITRIDED AND N2O-GROWN OXIDES, Solid-state electronics, 42(11), 1998, pp. 2053-2056
Authors:
HUANG MQ
LAI PT
XU JP
ZENG SH
LI GQ
CHENG YC
Citation: Mq. Huang et al., SUPPRESSION OF HOT-ELECTRON-INDUCED INTERFACE DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY BACKSURFACE ARGON BOMBARDMENT, Microelectronics and reliability, 38(9), 1998, pp. 1407-1411
Authors:
HUANG L
LAI PT
XU JP
CHENG YC
Citation: L. Huang et al., MECHANISM ANALYSIS OF GATE-INDUCED DRAIN LEAKAGE IN OFF-STATE N-MOSFET, Microelectronics and reliability, 38(9), 1998, pp. 1425-1431
Authors:
LAI PT
XU JP
LO HB
CHENG YC
Citation: Pt. Lai et al., OFF-STATE GATE CURRENT WITH QUASI-ZERO TEMPERATURE-COEFFICIENT IN N-MOSFETS WITH REOXIDIZED NITRIDED-OXIDE AS GATE DIELECTRIC, Microelectronics and reliability, 38(10), 1998, pp. 1585-1589
Authors:
LAI PT
XU JP
POEK CK
CHENG YC
Citation: Pt. Lai et al., ANALYSIS ON ACCURACY OF CHARGE-PUMPING MEASUREMENT WITH GATE SAWTOOTHPULSES, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 947-952
Authors:
LAI PT
XU JP
WONG WM
LO HB
CHENG YC
Citation: Pt. Lai et al., CORRELATION BETWEEN HOT-CARRIER-INDUCED INTERFACE STATES AND GIDL CURRENT INCREASE IN N-MOSFETS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 521-528
Authors:
LI GQ
LAI PT
ZENG SH
HUANG MC
CHENG YC
Citation: Gq. Li et al., PHOTOSENSITIVITY, THERMAL AND HUMIDITY SENSITIVITY CHARACTERISTICS OFSR1-XLAXTIO3 FILM ON SIO2 SI SUBSTRATE/, Sensors and actuators. A, Physical, 63(3), 1997, pp. 223-226
Authors:
ZHENG XR
LAI PT
LIU BY
LI B
CHENG YC
Citation: Xr. Zheng et al., AN INTEGRATED PVDF ULTRASONIC SENSOR WITH IMPROVED SENSITIVITY USING POLYIMIDE, Sensors and actuators. A, Physical, 63(2), 1997, pp. 147-152
Authors:
LAI PT
LIU BY
ZHENG XR
LI B
ZHANG SY
WU ZH
Citation: Pt. Lai et al., MONOLITHIC INTEGRATED SPREADING-RESISTANCE SILICON FLOW SENSOR, Sensors and actuators. A, Physical, 58(1), 1997, pp. 85-88
Authors:
ZENG X
LAI PT
NG WT
Citation: X. Zeng et al., AC HOT-CARRIER-INDUCED DEGRADATION IN NMOSFETS WITH N2O-BASED GATE DIELECTRICS, IEEE electron device letters, 18(2), 1997, pp. 39-41
Authors:
LIU BY
LAI PT
ZHENG XR
WU ZH
LI B
Citation: By. Liu et al., A 2-DIMENSIONAL FLOW SENSOR USING INTEGRATED SILICON SPREADING-RESISTANCE TEMPERATURE DETECTORS, Review of scientific instruments, 68(10), 1997, pp. 3785-3789
Authors:
LAI PT
XU JP
LO HB
CHENG YC
Citation: Pt. Lai et al., A STUDY ON INTERFACE AND CHARGE TRAPPING PROPERTIES OF NITRIDED N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BY BACKSURFACEARGON BOMBARDMENT, Journal of applied physics, 82(4), 1997, pp. 1947-1950
Authors:
LAI PT
XU JP
LO HB
CHENG YC
Citation: Pt. Lai et al., QUALITY IMPROVEMENT OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED OXIDE BYN2O NITRIDATION, Applied physics letters, 70(8), 1997, pp. 996-998
Authors:
LAI PT
XU JP
ZENG X
CHENG YC
Citation: Pt. Lai et al., NEW OBSERVATION AND IMPROVEMENT IN GIDL OF N-MOSFETS WITH VARIOUS KINDS OF N2O-BASED GATE OXIDES UNDER HOT-CARRIER STRESS, Solid-state electronics, 39(11), 1996, pp. 1549-1552
Authors:
SURYA C
WANG W
FONG WK
CHAN CH
LAI PT
Citation: C. Surya et al., EFFECTS OF AR-SURFACE GETTERING ON THE PROPERTIES OF FLICKER NOISE INN-CHANNEL NITRIDED MOSFETS( BACK), Solid-state electronics, 39(11), 1996, pp. 1577-1580
Authors:
ZENG X
LAI PT
NG WT
Citation: X. Zeng et al., A NOVEL TECHNIQUE OF N2O-TREATMENT ON NH3-NITRIDED OXIDE AS GATE DIELECTRIC FOR NMOS TRANSISTORS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1907-1913
Authors:
LAI PT
HUANG MQ
ZENG X
ZENG SH
LI GQ
Citation: Pt. Lai et al., INFLUENCE OF BACKSURFACE ARGON BOMBARDMENT ON SIO2-SI INTERFACE CHARACTERISTICS, Applied physics letters, 68(19), 1996, pp. 2687-2689
Authors:
LAI PT
XU Z
LI GQ
NG WT
Citation: Pt. Lai et al., MOBILITY IMPROVEMENT OF N-MOSFETS WITH NITRIDED GATE OXIDE BY BACKSURFACE AR+ BOMBARDMENT, IEEE electron device letters, 16(8), 1995, pp. 354-356
Authors:
XU Z
LAI PT
NG WT
Citation: Z. Xu et al., ENHANCED OFF-STATE LEAKAGE CURRENTS IN N-CHANNEL MOSFETS WITH N2O-GROWN GATE DIELECTRIC, IEEE electron device letters, 16(10), 1995, pp. 436-438
Authors:
XU Z
LAI PT
NG WT
Citation: Z. Xu et al., OFF-STATE LEAKAGE CURRENT IN N-CHANNEL MOSFETS WITH GATE DIELECTRICS PREPARED BY DIFFERENT TECHNIQUES, Microelectronic engineering, 28(1-4), 1995, pp. 97-100
Authors:
LI GQ
LAI PT
ZENG SH
HUANG MQ
LIU BY
Citation: Gq. Li et al., EFFECTS OF CHEMICAL-COMPOSITION ON HUMIDITY SENSITIVITY OF AL BATIO3/SI STRUCTURE/, Applied physics letters, 66(18), 1995, pp. 2436-2438
Authors:
LAI PT
CHENG YC
Citation: Pt. Lai et Yc. Cheng, A CLOSED-FORM DELAY EXPRESSION FOR DIGITAL BICMOS CIRCUITS WITH HIGH-INJECTION EFFECTS, IEEE journal of solid-state circuits, 29(5), 1994, pp. 640-643