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Results:
1-13
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Results: 13
Authors:
KRAUSEREHBERG R
LEIPNER HS
ABGARJAN T
POLITY A
Citation: R. Krauserehberg et al., REVIEW OF DEFECT INVESTIGATIONS BY MEANS OF POSITRON-ANNIHILATION IN II-VI COMPOUND SEMICONDUCTORS, Applied physics A: Materials science & processing, 66(6), 1998, pp. 599-614
Authors:
LEIPNER HS
SCHOLZ R
SYROWATKA F
UNIEWSKI H
SCHREIBER J
Citation: Hs. Leipner et al., INTERACTION OF COPPER WITH DISLOCATIONS IN GAAS, Journal de physique. III, 7(7), 1997, pp. 1495-1503
Authors:
HILDEBRANDT S
UNIEWSKI H
SCHREIBER J
LEIPNER HS
Citation: S. Hildebrandt et al., LOCALIZATION OF Y-LUMINESCENCE AT GLIDE DISLOCATIONS IN CADMIUM TELLURIDE, Journal de physique. III, 7(7), 1997, pp. 1505-1514
Authors:
KRAUSEREHBERG R
LEIPNER HS
Citation: R. Krauserehberg et Hs. Leipner, DETERMINATION OF ABSOLUTE VACANCY CONCENTRATIONS IN SEMICONDUCTORS BYMEANS OF POSITRON-ANNIHILATION, Applied physics A: Materials science & processing, 64(5), 1997, pp. 457-466
Authors:
LEIPNER HS
SCHOLZ R
SYROWATKA F
UNIEWSKI H
SCHREIBER J
Citation: Hs. Leipner et al., STUDY OF COPPER AGGREGATIONS AT DISLOCATIONS IN GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 185-188
Authors:
UNIEWSKI H
SCHREIBER J
HILDEBRANDT S
LEIPNER HS
Citation: H. Uniewski et al., SEM CL STUDIES ON POLAR GLIDE DISLOCATIONS IN CDTE, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 284-288
Authors:
KRAUSEREHBERG R
LEIPNER HS
POLITY A
RUDOLF F
HAMMER R
JURISCH M
Citation: R. Krauserehberg et al., MECHANICAL DAMAGE IN GAAS WAFERS INTRODUCED BY A DIAMOND SAW - A STUDY BY MEANS OF POSITRON-ANNIHILATION AND ELECTRON-MICROSCOPY, Physica status solidi. a, Applied research, 158(2), 1996, pp. 377-383
Authors:
HUBNER CG
STAAB T
LEIPNER HS
Citation: Cg. Hubner et al., TEM STUDIES OF THE MICROSTRUCTURE OF PRESSURELESS SINTERED COPPER, Physica status solidi. a, Applied research, 150(2), 1995, pp. 653-660
Authors:
SEKIGUCHI T
LEIPNER HS
Citation: T. Sekiguchi et Hs. Leipner, DAMAGE-INDUCED LUMINESCENCE IN INP, Applied physics letters, 67(25), 1995, pp. 3777-3779
Authors:
KRAUSEREHBERG R
LEIPNER HS
KUPSCH A
POLITY A
DROST T
Citation: R. Krauserehberg et al., POSITRON STUDY OF DEFECTS IN AS-GROWN AND PLASTICALLY DEFORMED GAAS-TE, Physical review. B, Condensed matter, 49(4), 1994, pp. 2385-2395
Authors:
KRAUSEREHBERG R
BROHL M
LEIPNER HS
DROST T
POLITY A
BEYER U
ALEXANDER H
Citation: R. Krauserehberg et al., DEFECTS IN PLASTICALLY DEFORMED SEMICONDUCTORS STUDIED BY POSITRON-ANNIHILATION - SILICON AND GERMANIUM, Physical review. B, Condensed matter, 47(20), 1993, pp. 13266-13276
Authors:
LEIPNER HS
KRAUSEREHBERG R
KUPSCH A
DROST T
POLITY A
Citation: Hs. Leipner et al., ELECTRON-MICROSCOPY AND POSITRON INVESTIGATIONS OF PLASTICALLY DEFORMED GAAS, Physica status solidi. a, Applied research, 138(2), 1993, pp. 489-495
Authors:
SCHREIBER J
HILDEBRANDT S
LEIPNER HS
Citation: J. Schreiber et al., STUDIES ON CARRIER RECOMBINATION AT DISLOCATIONS IN COMPOUND SEMICONDUCTORS BY COMBINED SEM-CL EBIC MEASUREMENTS/, Physica status solidi. a, Applied research, 138(2), 1993, pp. 705-713
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