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Results: 1-25 | 26-40 |
Results: 26-40/40
OXYGEN GETTERING AND OXIDE DEGRADATION DURING ANNEALING OF SI SIO2/SISTRUCTURES/
Authors: DEVINE RAB WARREN WL XU JB WILSON IH PAILLET P LERAY JL
Citation: Rab. Devine et al., OXYGEN GETTERING AND OXIDE DEGRADATION DURING ANNEALING OF SI SIO2/SISTRUCTURES/, Journal of applied physics, 77(1), 1995, pp. 175-186
EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES
Authors: FLAMENT O LERAY JL MARTIN F ORSIER E PELLOIE JL TRUCHE R DEVINE RAB
Citation: O. Flament et al., EFFECT OF RAPID THERMAL ANNEALING ON RADIATION HARDENING OF MOS DEVICES, IEEE transactions on nuclear science, 42(6), 1995, pp. 1667-1673
TRAPPING DETRAPPING PROPERTIES OF IRRADIATED ULTRA-THIN SIMOX BURIED OXIDES
Authors: PAILLET P AUTRAN JL LERAY JL ASPAR B AUBERTONHERVE AJ
Citation: P. Paillet et al., TRAPPING DETRAPPING PROPERTIES OF IRRADIATED ULTRA-THIN SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 42(6), 1995, pp. 2108-2113
COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES
Authors: FERLETCAVROIS V MUSSEAU O LERAY JL COIC YM LECARVAL G GUICHARD E
Citation: V. Ferletcavrois et al., COMPARISON OF THE SENSITIVITY TO HEAVY-IONS OF SRAMS IN DIFFERENT SIMOX TECHNOLOGIES, IEEE electron device letters, 15(3), 1994, pp. 82-84
THEORETICAL-STUDY OF SEUS IN 0.25-MU-M FULLY-DEPLETED CMOS SOI TECHNOLOGY
Authors: BRISSET C DOLLFUS P MUSSEAU O LERAY JL HESTO P
Citation: C. Brisset et al., THEORETICAL-STUDY OF SEUS IN 0.25-MU-M FULLY-DEPLETED CMOS SOI TECHNOLOGY, IEEE transactions on nuclear science, 41(6), 1994, pp. 2297-2303
STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY
Authors: BLANQUART L DELPIERRE P HABRARD MC MEKKAOUI A MOUTHUY T DENTAN M DELAGNES E FOURCHES N ROUGER M TRUCHE R DELEVOYE E DEPONTCHARRA J BLANC JP FLAMENT O LERAY JL MUSSEAU O
Citation: L. Blanquart et al., STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY, IEEE transactions on nuclear science, 41(6), 1994, pp. 2525-2529
SPACE-CHARGE EFFECTS IN SIMOX BURIED OXIDES
Authors: HERVE D PAILLET P LERAY JL
Citation: D. Herve et al., SPACE-CHARGE EFFECTS IN SIMOX BURIED OXIDES, IEEE transactions on nuclear science, 41(3), 1994, pp. 466-472
EVIDENCE OF NEGATIVE CHARGE TRAPPING IN HIGH-TEMPERATURE ANNEALED THERMAL OXIDE
Authors: PAILLET P HERVE D LERAY JL DEVINE RAB
Citation: P. Paillet et al., EVIDENCE OF NEGATIVE CHARGE TRAPPING IN HIGH-TEMPERATURE ANNEALED THERMAL OXIDE, IEEE transactions on nuclear science, 41(3), 1994, pp. 473-478
A STUDY OF RADIATION VULNERABILITY OF FERROELECTRIC MATERIAL AND DEVICES
Authors: COIC YM MUSSEAU O LERAY JL
Citation: Ym. Coic et al., A STUDY OF RADIATION VULNERABILITY OF FERROELECTRIC MATERIAL AND DEVICES, IEEE transactions on nuclear science, 41(3), 1994, pp. 495-502
RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS
Authors: FLAMENT O LERAY JL MARTIN JL MONTARON J RAFFAELLI M BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONCHARRA J TRUCHE R DELAGNES E DENTAN M FOURCHES N
Citation: O. Flament et al., RADIATION EFFECTS ON SOI ANALOG DEVICES PARAMETERS, IEEE transactions on nuclear science, 41(3), 1994, pp. 565-571
SEU IN SOI SRAMS - A STATIC MODEL
Authors: MUSSEAU O LERAY JL FERLETCAVROIS V COIC YM GIFFARD B
Citation: O. Musseau et al., SEU IN SOI SRAMS - A STATIC MODEL, IEEE transactions on nuclear science, 41(3), 1994, pp. 607-612
RADIATION HARDENING OF INTEGRATED-CIRCUIT S TECHNOLOGIES
Authors: AUBERTONHERVE AJ LERAY JL
Citation: Aj. Aubertonherve et Jl. Leray, RADIATION HARDENING OF INTEGRATED-CIRCUIT S TECHNOLOGIES, Annales de chimie, 18(2), 1993, pp. 85-99
HARDENED COMPONENTS - WHERE, WHEN, HOW - A COMMUNITY SERVING INDUSTRY
Authors: LERAY JL
Citation: Jl. Leray, HARDENED COMPONENTS - WHERE, WHEN, HOW - A COMMUNITY SERVING INDUSTRY, Onde electrique, 73(6), 1993, pp. 70-71
STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS
Authors: DENTAN M DELAGNES E FOURCHES N ROUGER M HABRARD MC BLANQUART L DELPIERRE P POTHEAU R TRUCHE R BLANC JP DELEVOYE E GAUTIER J PELLOIE JL DEPONTCHARRA J FLAMENT O LERAY JL MARTIN JL MONTARON J MUSSEAU O
Citation: M. Dentan et al., STUDY OF A CMOS-JFET-BIPOLAR RADIATION-HARD ANALOG-DIGITAL TECHNOLOGYSUITABLE FOR HIGH-ENERGY PHYSICS ELECTRONICS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1555-1560
EFFECT OF HIGH-TEMPERATURE PROCESSING OF SI SIO2/SI STRUCTURES ON THEIR RESPONSE TO X-RAY-IRRADIATION/
Authors: PAILLET P HERVE D LERAY JL DEVINE RAB
Citation: P. Paillet et al., EFFECT OF HIGH-TEMPERATURE PROCESSING OF SI SIO2/SI STRUCTURES ON THEIR RESPONSE TO X-RAY-IRRADIATION/, Applied physics letters, 63(15), 1993, pp. 2088-2090
Risultati: 1-25 | 26-40 |