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Results: 1-20 |
Results: 20
HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDY OF LUMINESCENTANODIZED AMORPHOUS-SILICON
Authors: BUSTARRET E SAUVAIN E LIGEON M
Citation: E. Bustarret et al., HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY STUDY OF LUMINESCENTANODIZED AMORPHOUS-SILICON, Philosophical magazine letters, 75(1), 1997, pp. 35-42
INVESTIGATION OF THE QUENCHING MECHANISMS OF THE POROUS SILICON LUMINESCENCE
Authors: HORY MA BSIESY A HERINO R LIGEON M MULLER F VIAL JC
Citation: Ma. Hory et al., INVESTIGATION OF THE QUENCHING MECHANISMS OF THE POROUS SILICON LUMINESCENCE, Thin solid films, 276(1-2), 1996, pp. 130-133
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE IN POROUS AMORPHOUS-SILICON
Authors: BUSTARRET E SAUVAIN E LIGEON M ROSENBAUER M
Citation: E. Bustarret et al., TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE IN POROUS AMORPHOUS-SILICON, Thin solid films, 276(1-2), 1996, pp. 134-137
ANODIZED AMORPHOUS-SILICON - PRESENT STATUS
Authors: BUSTARRET E LIGEON M ROSENBAUER M
Citation: E. Bustarret et al., ANODIZED AMORPHOUS-SILICON - PRESENT STATUS, Physica status solidi. b, Basic research, 190(1), 1995, pp. 111-116
EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE
Authors: BSIESY A HORY MA GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE, Microelectronic engineering, 28(1-4), 1995, pp. 233-236
ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN THE POTENTIOSTATIC REGIME
Authors: BILLAT S GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN F VIAL JC
Citation: S. Billat et al., ELECTROLUMINESCENCE OF HEAVILY-DOPED P-TYPE POROUS SILICON UNDER ELECTROCHEMICAL OXIDATION IN THE POTENTIOSTATIC REGIME, Thin solid films, 263(2), 1995, pp. 238-242
VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE
Authors: BSIESY A GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-INDUCED MODIFICATIONS OF POROUS SILICON LUMINESCENCE, Thin solid films, 255(1-2), 1995, pp. 80-86
FOURIER-TRANSFORM IR MONITORING OF POROUS SILICON PASSIVATION DURING POSTTREATMENTS SUCH AS ANODIC-OXIDATION AND CONTACT WITH ORGANIC-SOLVENTS
Authors: HORY MA HERINO R LIGEON M MULLER F GASPARD F MIHALCESCU I VIAL JC
Citation: Ma. Hory et al., FOURIER-TRANSFORM IR MONITORING OF POROUS SILICON PASSIVATION DURING POSTTREATMENTS SUCH AS ANODIC-OXIDATION AND CONTACT WITH ORGANIC-SOLVENTS, Thin solid films, 255(1-2), 1995, pp. 200-203
URBACH EDGES IN LIGHT-EMITTING POROUS SILICON AND RELATED MATERIALS
Authors: BUSTARRET E LIGEON M MIHALCESCU I OSWALD J
Citation: E. Bustarret et al., URBACH EDGES IN LIGHT-EMITTING POROUS SILICON AND RELATED MATERIALS, Thin solid films, 255(1-2), 1995, pp. 234-237
SYNCHROTRON-RADIATION STUDY OF STRUCTURAL-PROPERTIES OF POROUS SILICON
Authors: BELET D DOLINO G BILLAT S LIGEON M LEFEBVRE S BESSIERE M
Citation: D. Belet et al., SYNCHROTRON-RADIATION STUDY OF STRUCTURAL-PROPERTIES OF POROUS SILICON, Journal of luminescence, 62(2), 1994, pp. 49-54
LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION
Authors: BSIESY A VIAL JC GASPARD F HERINO R LIGEON M MIHALCESCU I MULLER F ROMESTAIN R
Citation: A. Bsiesy et al., LIGHT-EMISSION FROM POROUS SILICON UNDER PHOTOEXCITATION AND ELECTROEXCITATION, Journal of the Electrochemical Society, 141(11), 1994, pp. 3071-3076
RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE
Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., RELATION BETWEEN POROUS SILICON PHOTOLUMINESCENCE AND ITS VOLTAGE-TUNABLE ELECTROLUMINESCENCE, Applied physics letters, 65(26), 1994, pp. 3371-3373
BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT
Authors: VIAL JC BILLAT S BSIESY A FISHMAN G GASPARD F HERINO R LIGEON M MADEORE F MIHALCESCU I MULLER F ROMESTAIN R
Citation: Jc. Vial et al., BRIGHT VISIBLE-LIGHT EMISSION FROM ELECTROOXIDIZED POROUS SILICON - AQUANTUM CONFINEMENT EFFECT, Physica. B, Condensed matter, 185(1-4), 1993, pp. 593-602
VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE
Authors: BSIESY A MULLER F LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., VOLTAGE-CONTROLLED SPECTRAL SHIFT OF POROUS SILICON ELECTROLUMINESCENCE, Physical review letters, 71(4), 1993, pp. 637-640
PREPARATION AND PROPERTIES OF ANODIZED AMORPHOUS-SILICON
Authors: BUSTARRET E CALI J CROS Y BRUNEL M MIHALCESCU I LIGEON M
Citation: E. Bustarret et al., PREPARATION AND PROPERTIES OF ANODIZED AMORPHOUS-SILICON, Journal of non-crystalline solids, 166, 1993, pp. 937-940
ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE
Authors: BSIESY A MULLER F MIHALCESCU I LIGEON M GASPARD F HERINO R ROMESTAIN R VIAL JC
Citation: A. Bsiesy et al., ELECTRICALLY-INDUCED SELECTIVE QUENCHING OF POROUS SILICON PHOTOLUMINESCENCE, Journal of luminescence, 57(1-6), 1993, pp. 29-32
COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLYOXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON
Authors: BUSTARRET E MIHALCESCU I LIGEON M ROMESTAIN R VIAL JC MADEORE F
Citation: E. Bustarret et al., COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLYOXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 105-109
SURFACE PASSIVATION - A CRITICAL PARAMETER FOR THE VISIBLE LUMINESCENCE OF ELECTROOXIDIZED POROUS SILICON
Authors: MIHALCESCU I LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation: I. Mihalcescu et al., SURFACE PASSIVATION - A CRITICAL PARAMETER FOR THE VISIBLE LUMINESCENCE OF ELECTROOXIDIZED POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 111-115
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS
Authors: MULLER F HERINO R LIGEON M GASPARD F ROMESTAIN R VIAL JC BSIESY A
Citation: F. Muller et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE FROM ELECTROCHEMICALLY OXIDIZED POROUS SILICON LAYERS, Journal of luminescence, 57(1-6), 1993, pp. 283-292
ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON
Authors: LIGEON M MULLER F HERINO R GASPARD F VIAL JC ROMESTAIN R BILLAT S BSIESY A
Citation: M. Ligeon et al., ANALYSIS OF THE ELECTROLUMINESCENCE OBSERVED DURING THE ANODIC-OXIDATION OF POROUS LAYERS FORMED ON LIGHTLY P-DOPED SILICON, Journal of applied physics, 74(2), 1993, pp. 1265-1271
Risultati: 1-20 |