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Results:
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Results: 20
Authors:
GOTZ B
LINDNER JKN
STRITZKER B
Citation: B. Gotz et al., ION-BEAM SYNTHESIS OF SIC LAYERS IN SIMOX MATERIAL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 333-336
Authors:
VOLZ K
LINDNER JKN
STRITZKER B
Citation: K. Volz et al., ION-BEAM MODIFICATION OF SI SIC/SI LAYER SYSTEMS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 355-359
Authors:
LINDNER JKN
Citation: Jkn. Lindner, COMPOSITIONAL EFFECTS ON THE RADIATION-DAMAGE OF 2 MEV SI ION-IMPLANTED RELAXED SI1-XGEX ALLOYS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 401-405
Authors:
LARSEN AN
ORAIFEARTAIGH C
BARKLIE RC
HOLM B
PRIOLO F
FRANZO G
LULLI G
BIANCONI M
NIPOTI R
LINDNER JKN
MESLI A
GROB JJ
CRISTIANO F
HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218
Authors:
LINDNER JKN
VOLZ K
PRECKWINKEL U
GOTZ B
FROHNWIESER A
RAUSCHENBACH B
STRITZKER B
Citation: Jkn. Lindner et al., FORMATION OF BURIED EPITAXIAL SILICON-CARBIDE LAYERS IN SILICON BY ION-BEAM SYNTHESIS, Materials chemistry and physics, 46(2-3), 1996, pp. 147-155
Authors:
PRIOLO F
LINDNER JKN
LARSEN AN
POSTE JM
Citation: F. Priolo et al., NEW TRENDS IN ION-BEAM PROCESSING OF MATERIALS - PROCEEDINGS OF THE E-MRS 96 SPRING MEETING SYMP .1. ON NEW TRENDS IN ION-BEAM PROCESSING OF MATERIALS STRASBOURG, FRANCE, JUNE 4-7, 1996 - PREFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 7-7
Authors:
PRECKWINKEL U
LINDNER JKN
STRITZKER B
RAUSCHENBACH B
Citation: U. Preckwinkel et al., STRUCTURE AND STRAIN-MEASUREMENTS ON SIC FORMED BY CARBON ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 125-128
Authors:
VOLZ K
LINDNER JKN
STRITZKER B
Citation: K. Volz et al., ION-BEAM-INDUCED AMORPHIZATION AND RECRYSTALLIZATION OF SI SIC/SI LAYER SYSTEMS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 133-138
Authors:
ORAIFEARTAIGH C
BARKLIE RC
LARSEN AN
PRIOLO F
FRANZO G
LULLI G
BIANCONI M
LINDNER JKN
CRISTIANO F
HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168
Authors:
PRIOLO F
SPINELLA C
ALBERTAZZI E
BIANCONI M
LULLI G
NIPOTI R
LINDNER JKN
MESLI A
BARKLIE RC
SEALY L
HOLM B
LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304
Authors:
LINDNER JKN
Citation: Jkn. Lindner, RADIATION-DAMAGE OF 2 MEV SI IONS IN SI0.75GE0.25 OPTICAL MEASUREMENTS AND DAMAGE MODELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 316-320
Authors:
LINDNER JKN
HENKE S
RAUSCHENBACH B
STRITZKER B
Citation: Jkn. Lindner et al., ELECTRON-DIFFRACTION STUDIES OF EPITAXIAL C-60 THIN-FILMS ON MICA(001), Thin solid films, 279(1-2), 1996, pp. 106-109
Authors:
PFEIFER B
LINDNER JKN
RAUSCHENBACH B
STRITZKER B
Citation: B. Pfeifer et al., 2 MEV ALUMINUM IMPLANTATION INTO SILICON - RADIATION-DAMAGE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 150-154
Authors:
VARICHENKO VS
ZAITSEV AM
LINDNER JKN
DOMRES R
PENINA NM
ERCHAK DP
CHELYADINSKII AR
MARTINOVITSH VA
Citation: Vs. Varichenko et al., EPR, XRD AND OPTICAL REFLECTIVITY STUDIES OF RADIATION-DAMAGE IN SILICON AFTER HIGH-ENERGY IMPLANTATION OF NI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 94(3), 1994, pp. 240-244
Authors:
LINDNER JKN
Citation: Jkn. Lindner, MEV METAL-ION IMPLANTATIONS FOR BURIED LAYER FABRICATION IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 153-162
Authors:
HENKE S
THURER KH
LINDNER JKN
RAUSCHENBACH B
STRITZKER B
Citation: S. Henke et al., STRUCTURAL CHARACTERIZATION OF THE TEMPERATURE-DEPENDENCE OF C-60-THIN FILMS ON MICA(001) BY X-RAY-DIFFRACTION, Journal of applied physics, 76(6), 1994, pp. 3337-3340
Authors:
LINDNER JKN
KERSTEN P
TEKAAT EH
HENKE S
Citation: Jkn. Lindner et al., HIGH-ENERGY HIGH-DOSE NI IRRADIATION OF SOI STRUCTURES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 807-812
Authors:
SCHIPPEL S
WITZMANN A
LINDNER JKN
Citation: S. Schippel et al., THERMAL-STABILITY OF SI COSI2 MULTIPLE LAYER SYSTEMS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 949-954
Authors:
BRUESCH P
STOCKMEIER T
STUCKI F
BUFFAT PA
LINDNER JKN
Citation: P. Bruesch et al., PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .2. OPTICAL STUDIES OF THIN-FILMS, Journal of applied physics, 73(11), 1993, pp. 7690-7700
Authors:
BRUESCH P
STOCKMEIER T
STUCKI F
BUFFAT PA
LINDNER JKN
Citation: P. Bruesch et al., PHYSICAL-PROPERTIES OF SEMIINSULATING POLYCRYSTALLINE SILICON .3. INFRARED DIAGNOSIS OF THE POLYCRYSTALLINE-SI C-SI INTERFACE, Journal of applied physics, 73(11), 1993, pp. 7701-7707
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