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Results: 26-40/40
Authors:
LING CH
TAN SE
ANG DS
Citation: Ch. Ling et al., A STUDY OF HOT-CARRIER DEGRADATION IN NMOSFETS BY GATE CAPACITANCE AND CHARGE-PUMPING CURRENT, I.E.E.E. transactions on electron devices, 42(7), 1995, pp. 1321-1328
Authors:
LING CH
SEAH BP
SAMUDRA GS
GAN CH
Citation: Ch. Ling et al., MEASUREMENT AND SIMULATION OF HOT-CARRIER DEGRADATION IN PMOSFET BY GATE CAPACITANCE, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 928-934
Authors:
LING CH
AH LK
YEOW YT
Citation: Ch. Ling et al., OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR (VOL 30, PG2077, 1994), Electronics Letters, 31(2), 1995, pp. 144-144
Authors:
LING CH
Citation: Ch. Ling, TRAP GENERATION AT SI SIO2 INTERFACE IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY 4.9 EV ULTRAVIOLET-IRRADIATION/, Journal of applied physics, 76(1), 1994, pp. 581-583
ANALYSIS OF THE VARIATION IN THE FIELD-DEPENDENT BEHAVIOR OF THERMALLY OXIDIZED TANTALUM OXIDE-FILMS
Authors:
CHOI WK
LING CH
Citation: Wk. Choi et Ch. Ling, ANALYSIS OF THE VARIATION IN THE FIELD-DEPENDENT BEHAVIOR OF THERMALLY OXIDIZED TANTALUM OXIDE-FILMS, Journal of applied physics, 75(8), 1994, pp. 3987-3990
Authors:
LING CH
AH LK
CHOI WK
TAN SE
ANG DS
Citation: Ch. Ling et al., HOT-ELECTRON DEGRADATION IN NMOSFETS - RESULTS FROM TEMPERATURE ANNEAL, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1303-1305
Authors:
GHODSI R
YEOW YT
LING CH
ALAM MK
Citation: R. Ghodsi et al., ARRIVING AT A UNIFIED MODEL FOR HOT-CARRIER DEGRADATION IN MOSFETS THROUGH GATE-TO-DRAIN CAPACITANCE MEASUREMENT, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2423-2429
Authors:
LING CH
AH LK
YEOW YT
Citation: Ch. Ling et al., OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR, Electronics Letters, 30(24), 1994, pp. 2077-2079
Authors:
LING CH
ANG DS
TAN SE
Citation: Ch. Ling et al., SPATIALLY UNIFORM DEGRADATION IN NMOSFETS - EVIDENCE FROM GATE CAPACITANCE AND CHARGE-PUMPING CURRENT, Electronics Letters, 30(20), 1994, pp. 1720-1722
Authors:
LING CH
Citation: Ch. Ling, ELECTRON TRAPPING AND INTERFACE STATE GENERATION IN PMOSFETS - RESULTS FROM GATE CAPACITANCE, JPN J A P 2, 32(10A), 1993, pp. 120001371-120001373
Authors:
SUNDARAM K
CHOI WK
LING CH
Citation: K. Sundaram et al., MEASUREMENT OF THE CURRENT TRANSIENT IN TA2O5 FILMS, Thin solid films, 230(2), 1993, pp. 95-98
Authors:
SUNDARAM K
CHOI WK
LING CH
Citation: K. Sundaram et al., QUASI-STATIC AND HIGH-FREQUENCY C-V MEASUREMENTS ON A1 TA2O5/SIO2/SI/, Thin solid films, 230(2), 1993, pp. 145-149
Authors:
LING CH
YEOW YT
AH LK
YUNG WH
CHOI WK
Citation: Ch. Ling et al., LOGARITHMIC TIME-DEPENDENCE OF PMOSFET DEGRADATION OBSERVED FROM GATECAPACITANCE, Electronics Letters, 29(4), 1993, pp. 418-420
Authors:
LING CH
Citation: Ch. Ling, INTERFACIAL POLARIZATION IN AL-Y2O3-SIO2-SI CAPACITOR (VOL 29, PG 1676, 1993), Electronics Letters, 29(24), 1993, pp. 2155-2155
Authors:
LING CH
Citation: Ch. Ling, INTERFACIAL POLARIZATION IN AL-Y2O3-SIO2-SI CAPACITOR, Electronics Letters, 29(19), 1993, pp. 1676-1678