AAAAAA

   
Results: 1-22 |
Results: 22
HIGH-RATE REACTIVE ION ETCH AND ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAAS VIA HOLES USING THICK POLYIMIDE AND PHOTORESIST MASKS
Authors: SHUL RJ LOVEJOY ML WORD JC HOWARD AJ RIEGER DJ KRAVITZ SH
Citation: Rj. Shul et al., HIGH-RATE REACTIVE ION ETCH AND ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAAS VIA HOLES USING THICK POLYIMIDE AND PHOTORESIST MASKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 657-659
COMPARISON OF OHMIC METALLIZATION SCHEMES FOR INGAALN
Authors: REN F VARTULI CB PEARTON SJ ABERNATHY CR DONOVAN SM MACKENZIE JD SHUL RJ ZOLPER JC LOVEJOY ML BACA AG HAGEROTTCRAWFORD M JONES KA
Citation: F. Ren et al., COMPARISON OF OHMIC METALLIZATION SCHEMES FOR INGAALN, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 802-806
CONDUCTION MECHANISMS IN W AND WSIX OHMIC CONTACTS TO INGAN AND INN
Authors: VARTULI CB PEARTON SJ ABERNATHY CR MACKENZIE JD LOVEJOY ML SHUL RJ ZOLPER JC BACA AG HAGEROTTCRAWFORD M JONES A REN F
Citation: Cb. Vartuli et al., CONDUCTION MECHANISMS IN W AND WSIX OHMIC CONTACTS TO INGAN AND INN, Solid-state electronics, 41(4), 1997, pp. 531-534
THERMAL-STABILITY OF W, WSIX, AND TI AL OHMIC CONTACTS TO INGAN, INN,AND INALN/
Authors: VARTULI CB PEARTON SJ ABERNATHY CR MACKENZIE JD SHUL RJ ZOLPER JC LOVEJOY ML BACA AG HAGEROTTCRAWFORD M
Citation: Cb. Vartuli et al., THERMAL-STABILITY OF W, WSIX, AND TI AL OHMIC CONTACTS TO INGAN, INN,AND INALN/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3520-3522
DEMONSTRATION OF NPN INAS BIPOLAR-TRANSISTORS WITH INVERTED BASE DOPING
Authors: DODD PE LOVEJOY ML LUNDSTROM MS MELLOCH MR WOODALL JM PETTIT D
Citation: Pe. Dodd et al., DEMONSTRATION OF NPN INAS BIPOLAR-TRANSISTORS WITH INVERTED BASE DOPING, IEEE electron device letters, 17(4), 1996, pp. 166-168
MULTILEVEL INTERCONNECTS FOR HETEROJUNCTION BIPOLAR-TRANSISTOR INTEGRATED-CIRCUIT TECHNOLOGIES
Authors: PATRIZI GA LOVEJOY ML ENQUIST PM SCHNEIDER RP HOU HQ
Citation: Ga. Patrizi et al., MULTILEVEL INTERCONNECTS FOR HETEROJUNCTION BIPOLAR-TRANSISTOR INTEGRATED-CIRCUIT TECHNOLOGIES, Thin solid films, 291, 1996, pp. 435-439
THIN-FILM TANTALUM NITRIDE RESISTOR TECHNOLOGY FOR PHOSPHIDE-BASED OPTOELECTRONICS
Authors: LOVEJOY ML PATRIZI GA RIEGER DJ BARBOUR JC
Citation: Ml. Lovejoy et al., THIN-FILM TANTALUM NITRIDE RESISTOR TECHNOLOGY FOR PHOSPHIDE-BASED OPTOELECTRONICS, Thin solid films, 291, 1996, pp. 513-517
ALGAASSB INGASB QUANTUM-WELL HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/
Authors: KLEM JF LOVEJOY ML
Citation: Jf. Klem et Ml. Lovejoy, ALGAASSB INGASB QUANTUM-WELL HETEROSTRUCTURES FOR P-CHANNEL FIELD-EFFECT TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 702-705
PLASMA-INDUCED DAMAGE OF GAAS PN-JUNCTION DIODES USING ELECTRON-CYCLOTRON-RESONANCE GENERATED CL-2 AR, BCL3/AR, CL-2/BCL3/AR, AND SICL4/AR PLASMAS/
Authors: SHUL RJ LOVEJOY ML HETHERINGTON DL RIEGER DJ KLEM JF MELLOCH MR
Citation: Rj. Shul et al., PLASMA-INDUCED DAMAGE OF GAAS PN-JUNCTION DIODES USING ELECTRON-CYCLOTRON-RESONANCE GENERATED CL-2 AR, BCL3/AR, CL-2/BCL3/AR, AND SICL4/AR PLASMAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 27-33
LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING
Authors: LOVEJOY ML HOWARD AJ ZAVADIL KR RIEGER DJ SHUL RJ BARNES PA
Citation: Ml. Lovejoy et al., LOW-RESISTIVITY OHMIC CONTACTS TO MODERATELY DOPED N-GAAS WITH LOW-TEMPERATURE PROCESSING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 758-762
PLASMA-INDUCED DAMAGE OF GAAS DURING ETCHING OF REFRACTORY-METAL CONTACTS
Authors: SHUL RJ LOVEJOY ML BACA AG ZOLPER JC RIEGER DJ HAFICH MJ CORLESS RF VARTULI CB
Citation: Rj. Shul et al., PLASMA-INDUCED DAMAGE OF GAAS DURING ETCHING OF REFRACTORY-METAL CONTACTS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 912-917
TEMPERATURE-DEPENDENCE OF MINORITY AND MAJORITY CARRIER MOBILITIES INDEGENERATELY DOPED GAAS
Authors: LOVEJOY ML MELLOCH MR LUNDSTROM MS
Citation: Ml. Lovejoy et al., TEMPERATURE-DEPENDENCE OF MINORITY AND MAJORITY CARRIER MOBILITIES INDEGENERATELY DOPED GAAS, Applied physics letters, 67(8), 1995, pp. 1101-1103
GERMANIUM-DOPED AND TELLURIUM-DOPED GAAS FOR NONALLOYED P-TYPE AND N-TYPE OHMIC CONTACTS
Authors: PARK J BARNES PA LOVEJOY ML
Citation: J. Park et al., GERMANIUM-DOPED AND TELLURIUM-DOPED GAAS FOR NONALLOYED P-TYPE AND N-TYPE OHMIC CONTACTS, Applied physics letters, 67(7), 1995, pp. 968-970
FUTURE MANUFACTURING TECHNIQUES FOR STACKED MCM INTERCONNECTIONS
Authors: CARSON RF SEIGAL PK CRAFT DC LOVEJOY ML
Citation: Rf. Carson et al., FUTURE MANUFACTURING TECHNIQUES FOR STACKED MCM INTERCONNECTIONS, JOM, 46(6), 1994, pp. 51-55
INVESTIGATION OF PLASMA ETCH INDUCED DAMAGE IN COMPOUND SEMICONDUCTOR-DEVICES
Authors: SHUL RJ LOVEJOY ML HETHERINGTON DL RIEGER DJ VAWTER GA KLEM JF MELLOCH MR
Citation: Rj. Shul et al., INVESTIGATION OF PLASMA ETCH INDUCED DAMAGE IN COMPOUND SEMICONDUCTOR-DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1351-1355
TEMPERATURE-DEPENDENCE OF MINORITY HOLE MOBILITY IN N-GAAS MEASURED WITH A NEW VARIABLE-TEMPERATURE TECHNIQUE()
Authors: LOVEJOY ML MELLOCH MR LUNDSTROM MS KEYES BR AHRENKIEL RK
Citation: Ml. Lovejoy et al., TEMPERATURE-DEPENDENCE OF MINORITY HOLE MOBILITY IN N-GAAS MEASURED WITH A NEW VARIABLE-TEMPERATURE TECHNIQUE(), Journal of electronic materials, 23(7), 1994, pp. 669-673
NONALLOYED, REFRACTORY-METAL CONTACT OPTIMIZATION WITH SHALLOW IMPLANTATIONS OF ZN AND MG
Authors: LOVEJOY ML ZOLPER JC SHERWIN ME BACA AG SHUL RJ RIEGER DJ KLEM JF
Citation: Ml. Lovejoy et al., NONALLOYED, REFRACTORY-METAL CONTACT OPTIMIZATION WITH SHALLOW IMPLANTATIONS OF ZN AND MG, Thin solid films, 253(1-2), 1994, pp. 496-500
AN ALL-IMPLANTED, SELF-ALIGNED, GAAS JFET WITH A NONALLOYED W P+-GAASOHMIC GATE CONTACT/
Authors: ZOLPER JC BACA AG SHUL RJ HOWARD AJ RIEGER DJ SHERWIN ME LOVEJOY ML HJALMARSON HP DRAPER BL KLEM JF HIETALA VM
Citation: Jc. Zolper et al., AN ALL-IMPLANTED, SELF-ALIGNED, GAAS JFET WITH A NONALLOYED W P+-GAASOHMIC GATE CONTACT/, I.E.E.E. transactions on electron devices, 41(7), 1994, pp. 1078-1082
NEW METHODS FOR CIRCUIT FABRICATION ON POLY(TETRAFLUOROETHYLENE) SUBSTRATES
Authors: HOWARD AJ RYE RR RICCO AJ RIEGER DJ LOVEJOY ML SLOAN LR MITCHELL MA
Citation: Aj. Howard et al., NEW METHODS FOR CIRCUIT FABRICATION ON POLY(TETRAFLUOROETHYLENE) SUBSTRATES, Journal of the Electrochemical Society, 141(12), 1994, pp. 3556-3561
HYBRID SHUBNIKOV-DEHAAS PHOTOLUMINESCENCE ANALYSIS OF 2-DIMENSIONAL ELECTRON-DENSITY IN STRAINED-QUANTUM-WELL STRUCTURES WITH HEAVILY-DOPEDCONTACT LAYERS
Authors: LOVEJOY ML SIMMONS JA HO P MARTIN PA
Citation: Ml. Lovejoy et al., HYBRID SHUBNIKOV-DEHAAS PHOTOLUMINESCENCE ANALYSIS OF 2-DIMENSIONAL ELECTRON-DENSITY IN STRAINED-QUANTUM-WELL STRUCTURES WITH HEAVILY-DOPEDCONTACT LAYERS, Applied physics letters, 64(26), 1994, pp. 3634-3636
MINORITY-CARRIER MOBILITY ENHANCEMENT IN P-MATCHED TO INP( INGAAS LATTICE)
Authors: HARMON ES LOVEJOY ML MELLOCH MR LUNDSTROM MS RITTER D HAMM RA
Citation: Es. Harmon et al., MINORITY-CARRIER MOBILITY ENHANCEMENT IN P-MATCHED TO INP( INGAAS LATTICE), Applied physics letters, 63(5), 1993, pp. 636-638
EXPERIMENTAL-OBSERVATION OF A MINORITY ELECTRON-MOBILITY ENHANCEMENT IN DEGENERATELY DOPED P-TYPE GAAS
Authors: HARMON ES LOVEJOY ML MELLOCH MR LUNDSTROM MS DELYON TJ WOODALL JM
Citation: Es. Harmon et al., EXPERIMENTAL-OBSERVATION OF A MINORITY ELECTRON-MOBILITY ENHANCEMENT IN DEGENERATELY DOPED P-TYPE GAAS, Applied physics letters, 63(4), 1993, pp. 536-538
Risultati: 1-22 |