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Results: 1-17 |
Results: 17
RBS-CHANNELING ANALYSIS OF VIRGIN 6H-SIC - EXPERIMENTS AND MONTE-CARLO SIMULATIONS
Authors: BIANCONI M ALBERTAZZI E CARNERA A LULLI G NIPOTI R SAMBO A
Citation: M. Bianconi et al., RBS-CHANNELING ANALYSIS OF VIRGIN 6H-SIC - EXPERIMENTS AND MONTE-CARLO SIMULATIONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1267-1271
RBS-CHANNELING DETERMINATION OF DAMAGE PROFILES IN FULLY RELAXED SI0.76GE0.24 IMPLANTED WITH 2 MEV SI IONS
Authors: BIANCONI M LULLI G SPALLACCI F ALBERTAZZI E NIPOTI R CARNERA A CELLINI C
Citation: M. Bianconi et al., RBS-CHANNELING DETERMINATION OF DAMAGE PROFILES IN FULLY RELAXED SI0.76GE0.24 IMPLANTED WITH 2 MEV SI IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(4), 1997, pp. 689-695
STOPPING AND DAMAGE PARAMETERS FOR MONTE-CARLO SIMULATION OF MEV IMPLANTS IN CRYSTALLINE SI
Authors: LULLI G ALBERTAZZI E BIANCONI M NIPOTI R CERVERA M CAMERA A CELLINI C
Citation: G. Lulli et al., STOPPING AND DAMAGE PARAMETERS FOR MONTE-CARLO SIMULATION OF MEV IMPLANTS IN CRYSTALLINE SI, Journal of applied physics, 82(12), 1997, pp. 5958-5964
MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX
Authors: LARSEN AN ORAIFEARTAIGH C BARKLIE RC HOLM B PRIOLO F FRANZO G LULLI G BIANCONI M NIPOTI R LINDNER JKN MESLI A GROB JJ CRISTIANO F HEMMENT PLF
Citation: An. Larsen et al., MEV ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI1-XGEX, Journal of applied physics, 81(5), 1997, pp. 2208-2218
TRIDIMENSIONAL CHARACTERIZATION OF VOIDS IN SELF-ANNEALED IMPLANTED SILICON USING ELECTRON HOLOGRAPHY
Authors: BEELI C MATTEUCCI G MIGLIORI A LULLI G MERLI PG
Citation: C. Beeli et al., TRIDIMENSIONAL CHARACTERIZATION OF VOIDS IN SELF-ANNEALED IMPLANTED SILICON USING ELECTRON HOLOGRAPHY, Helvetica Physica Acta, 70, 1997, pp. 3-4
ION-IMPLANTATION INDUCED SWELLING IN 6H-SIC
Authors: NIPOTI R ALBERTAZZI E BIANCONI M LOTTI R LULLI G CERVERA M CARNERA A
Citation: R. Nipoti et al., ION-IMPLANTATION INDUCED SWELLING IN 6H-SIC, Applied physics letters, 70(25), 1997, pp. 3425-3427
MONTE-CARLO SIMULATION OF ION-IMPLANTATION IN CRYSTALLINE SIC
Authors: ALBERTAZZI E LULLI G
Citation: E. Albertazzi et G. Lulli, MONTE-CARLO SIMULATION OF ION-IMPLANTATION IN CRYSTALLINE SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 147-150
2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX
Authors: ORAIFEARTAIGH C BARKLIE RC LARSEN AN PRIOLO F FRANZO G LULLI G BIANCONI M LINDNER JKN CRISTIANO F HEMMENT PLF
Citation: C. Oraifeartaigh et al., 2 MEV SI ION-IMPLANTATION DAMAGE IN RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 165-168
DIFFERENT METHODS FOR THE DETERMINATION OF DAMAGE PROFILES IN SI FROMRBS-CHANNELING SPECTRA - A COMPARISON
Authors: ALBERTAZZI E BIANCONI M LULLI G NIPOTI R CANTIANO M
Citation: E. Albertazzi et al., DIFFERENT METHODS FOR THE DETERMINATION OF DAMAGE PROFILES IN SI FROMRBS-CHANNELING SPECTRA - A COMPARISON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 128-132
DAMAGE PROFILES IN AS-IMPLANTED SILICON - FLUENCE DEPENDENCE
Authors: NIPOTI R LULLI G MILITA S SERVIDORI M CELLINI C CARNERA A
Citation: R. Nipoti et al., DAMAGE PROFILES IN AS-IMPLANTED SILICON - FLUENCE DEPENDENCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 148-151
DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON
Authors: ALBERTAZZI E BIANCONI M LULLI G NIPOTI R CARNERA A CELLINI C
Citation: E. Albertazzi et al., DYNAMIC MONTE-CARLO SIMULATION OF NONLINEAR DAMAGE GROWTH DURING ION-IMPLANTATION OF CRYSTALLINE SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 152-155
ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25
Authors: PRIOLO F SPINELLA C ALBERTAZZI E BIANCONI M LULLI G NIPOTI R LINDNER JKN MESLI A BARKLIE RC SEALY L HOLM B LARSEN AN
Citation: F. Priolo et al., ION-IMPLANTATION INDUCED DAMAGE IN RELAXED SI0.75GE0.25, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 301-304
INFLUENCE OF ELECTRON-BEAM PARAMETERS ON THE RADIATION-INDUCED FORMATION OF GRAPHITIC ONIONS
Authors: LULLI G PARISINI A MATTEI G
Citation: G. Lulli et al., INFLUENCE OF ELECTRON-BEAM PARAMETERS ON THE RADIATION-INDUCED FORMATION OF GRAPHITIC ONIONS, Ultramicroscopy, 60(2), 1995, pp. 187-194
EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON
Authors: SEALY L BARKLIE RC LULLI G NIPOTI R BALBONI R MILITA S SERVIDORI M
Citation: L. Sealy et al., EPR AND X-RAY-DIFFRACTION STUDY OF DAMAGE PRODUCED BY IMPLANTATION OFB IONS (50 KEV, 1 MEV) OR SI IONS (50 KEV, 700 KEV, 1.5 MEV) INTO SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 215-218
DYNAMICS OF VOID FORMATION DURING IMPLANTATION OF SI UNDER SELF-ANNEALING CONDITIONS AND THEIR INFLUENCE ON DOPANT DISTRIBUTION
Authors: LULLI G MERLI PG MIGLIORI A BRUSATIN G DRIGO AV
Citation: G. Lulli et al., DYNAMICS OF VOID FORMATION DURING IMPLANTATION OF SI UNDER SELF-ANNEALING CONDITIONS AND THEIR INFLUENCE ON DOPANT DISTRIBUTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 559-563
X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON
Authors: FABBRI R LULLI G NIPOTI R SERVIDORI M
Citation: R. Fabbri et al., X-RAY-DIFFRACTION ANALYSIS OF DAMAGE ACCUMULATION DUE TO THE NUCLEAR-ENERGY LOSS OF 50 KEV AND 1-2.2 MEV B IONS IMPLANTED IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 624-627
COMPARISON OF RESULTS AND MODELS OF SOLID-PHASE EPITAXIAL-GROWTH OF IMPLANTED SI LAYERS INDUCED BY ELECTRON-BEAM AND ION-BEAM IRRADIATION
Authors: LULLI G MERLI PG
Citation: G. Lulli et Pg. Merli, COMPARISON OF RESULTS AND MODELS OF SOLID-PHASE EPITAXIAL-GROWTH OF IMPLANTED SI LAYERS INDUCED BY ELECTRON-BEAM AND ION-BEAM IRRADIATION, Physical review. B, Condensed matter, 47(21), 1993, pp. 14023-14031
Risultati: 1-17 |