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Results: 1-25/26
Authors:
Eliseev, PG
Li, H
Liu, GT
Stintz, A
Newell, TC
Lester, LF
Malloy, KJ
Citation: Pg. Eliseev et al., Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers, IEEE S T QU, 7(2), 2001, pp. 135-142
Authors:
Wang, RH
Stintz, A
Varangis, PM
Newell, TC
Li, H
Malloy, KJ
Lester, LF
Citation: Rh. Wang et al., Room-temperature operation of InAs quantum-dash lasers on InP (001), IEEE PHOTON, 13(8), 2001, pp. 767-769
Authors:
Gray, AL
Stintz, A
Malloy, KJ
Newell, TC
Lester, LF
Citation: Al. Gray et al., Morphology and relaxation in InyGa1-yAs/GaAs multi-layer structures, J CRYST GR, 222(4), 2001, pp. 726-734
Authors:
Huang, XD
Stintz, A
Li, H
Rice, A
Liu, GT
Lester, LF
Cheng, J
Malloy, KJ
Citation: Xd. Huang et al., Bistable operation of a two-section 1.3-mu m InAs quantum dot laser - Absorption saturation and the quantum confined Stark effect, IEEE J Q EL, 37(3), 2001, pp. 414-417
Authors:
Qiu, Y
Gogna, P
Forouhar, S
Stintz, A
Lester, LF
Citation: Y. Qiu et al., High-performance InAs quantum-dot lasers near 1.3 mu m, APPL PHYS L, 79(22), 2001, pp. 3570-3572
Authors:
Huang, XD
Stintz, A
Li, H
Lester, LF
Cheng, J
Malloy, KJ
Citation: Xd. Huang et al., Passive mode-locking in 1.3 mu m two-section InAs quantum dot lasers, APPL PHYS L, 78(19), 2001, pp. 2825-2827
Authors:
Zhang, L
Lester, LF
Baca, AG
Shul, RJ
Chang, PC
Willison, CG
Mishra, UK
Denbaars, SP
Zolper, JC
Citation: L. Zhang et al., Fabrication and characterization of GaN junctionfield effect transistors, MRS I J N S, 5, 2000, pp. NIL_322-NIL_328
Authors:
Li, H
Liu, GT
Varangis, PM
Newell, TC
Stintz, A
Fuchs, B
Malloy, KJ
Lester, LF
Citation: H. Li et al., 150-nm tuning range in a grating-coupled external cavity quantum-dot laser, IEEE PHOTON, 12(7), 2000, pp. 759-761
Authors:
Stintz, A
Liu, GT
Li, H
Lester, LF
Malloy, KJ
Citation: A. Stintz et al., Low-threshold current density 1.3-mu m InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure, IEEE PHOTON, 12(6), 2000, pp. 591-593
Authors:
Liu, GT
Stintz, A
Pease, EA
Newell, TC
Malloy, KJ
Lester, LF
Citation: Gt. Liu et al., 1.58-mu m lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers, IEEE PHOTON, 12(1), 2000, pp. 4-6
Authors:
Zhang, L
Lester, LF
Baca, AG
Shul, RJ
Chang, PC
Willison, CG
Mishra, UK
Denbaars, SP
Zolper, JC
Citation: L. Zhang et al., Epitaxially-grown GaN junction field effect transistors, IEEE DEVICE, 47(3), 2000, pp. 507-511
Authors:
Eliseev, P
Li, H
Stintz, A
Liu, GT
Newell, TC
Malloy, KJ
Lester, LF
Citation: P. Eliseev et al., Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode, IEEE J Q EL, 36(4), 2000, pp. 479-485
Authors:
Liu, GT
Stintz, A
Li, H
Newell, TC
Gray, AL
Varangis, PM
Malloy, KJ
Lester, LF
Citation: Gt. Liu et al., The influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures, IEEE J Q EL, 36(11), 2000, pp. 1272-1279
Authors:
Varangis, PM
Li, H
Liu, GT
Newell, TC
Stintz, A
Fuchs, B
Malloy, KJ
Lester, LF
Citation: Pm. Varangis et al., Low-threshold quantum dot lasers with 201 nm tuning range, ELECTR LETT, 36(18), 2000, pp. 1544-1545
Authors:
Newell, TC
Varangis, PM
Pease, E
Stintz, A
Liu, GT
Malloy, KJ
Lester, LF
Citation: Tc. Newell et al., High-power AlGaInAs strained multiquantum well lasers operating at 1.52 mum, ELECTR LETT, 36(11), 2000, pp. 955-956
Authors:
Eliseev, PG
Li, H
Stintz, A
Liu, GT
Newell, TC
Malloy, KJ
Lester, LF
Citation: Pg. Eliseev et al., Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes, APPL PHYS L, 77(2), 2000, pp. 262-264
Authors:
Newell, TC
Wright, MW
Hou, H
Lester, LF
Citation: Tc. Newell et al., Carrier distribution, spontaneous emission and gain engineering in lasers with nonidentical quantum wells, IEEE S T QU, 5(3), 1999, pp. 620-626
Authors:
Zhang, L
Lester, LF
Shul, RJ
Willison, CG
Leavitt, RP
Citation: L. Zhang et al., Inductively coupled plasma etching of III-V antimonides in BCl3/Ar and Cl-2/Ar, J VAC SCI B, 17(3), 1999, pp. 965-969
Authors:
Lester, LF
Stintz, A
Li, H
Newell, TC
Pease, EA
Fuchs, BA
Malloy, KJ
Citation: Lf. Lester et al., Optical characteristics of 1.24-mu m InAs quantum-dot laser diodes, IEEE PHOTON, 11(8), 1999, pp. 931-933
Authors:
Newell, TC
Bossert, DJ
Stintz, A
Fuchs, B
Malloy, KJ
Lester, LF
Citation: Tc. Newell et al., Gain and linewidth enhancement factor in InAs quantum-dot laser diodes, IEEE PHOTON, 11(12), 1999, pp. 1527-1529
Authors:
Newell, T
Wu, X
Gray, AL
Dorato, S
Lee, H
Lester, LF
Citation: T. Newell et al., The effect of increased valence band offset on the operation of 2 mu m GaInAsSb-AlGaAsSb lasers, IEEE PHOTON, 11(1), 1999, pp. 30-32
Authors:
Hong, J
Shul, RJ
Zhang, L
Lester, LF
Cho, H
Hahn, YB
Hays, DC
Jung, KB
Pearton, SJ
Zetterling, CM
Ostling, M
Citation: J. Hong et al., Plasma chemistries for high density plasma etching of SiC, J ELEC MAT, 28(3), 1999, pp. 196-201
Authors:
Gutierrez, A
Dorn, P
Zeller, J
King, D
Lester, LF
Rudolph, W
Sheik-Bahae, M
Citation: A. Gutierrez et al., Autocorrelation measurement of femtosecond laser pulses by use of a ZnSe two-photon detector array, OPTICS LETT, 24(16), 1999, pp. 1175-1177
Authors:
Gray, AL
Newell, TC
Lester, LF
Lee, H
Citation: Al. Gray et al., High-resolution x-ray and transmission electron microscopic analysis of a GaInAsSb AlGaAsSb multiple quantum well laser structure, J APPL PHYS, 85(11), 1999, pp. 7664-7670
Authors:
Liu, GT
Stintz, A
Li, H
Malloy, KJ
Lester, LF
Citation: Gt. Liu et al., Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well, ELECTR LETT, 35(14), 1999, pp. 1163-1165