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Results:
1-21
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Results: 21
Authors:
Afonin, PV
Fokin, AV
Tsygannik, IN
Mikhailova, IY
Onoprienko, LV
Mikhaleva, II
Ivanov, VT
Mareeva, TY
Nesmeyanov, VA
Li, NY
Pangborn, WA
Duax, WL
Pletnev, VZ
Citation: Pv. Afonin et al., Crystal structure of an anti-interleukin-2 monoclonal antibody Fab complexed with an antigenic nonapeptide, PROTEIN SCI, 10(8), 2001, pp. 1514-1521
Authors:
Chang, PC
Li, NY
Baca, AG
Hou, HQ
Monier, C
Laroche, JR
Ren, F
Pearton, SJ
Citation: Pc. Chang et al., Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor, IEEE ELEC D, 22(3), 2001, pp. 113-115
Authors:
Lin, CJ
Huang, YS
Li, NY
Li, PW
Tiong, KK
Citation: Cj. Lin et al., Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure, J APPL PHYS, 90(9), 2001, pp. 4565-4569
Authors:
Monier, C
Baca, AG
Chang, PC
Li, NY
Hou, HQ
Ren, F
Pearton, SJ
Citation: C. Monier et al., Pnp InGaAsN-based HBT with graded base doping, ELECTR LETT, 37(3), 2001, pp. 198-199
Authors:
Liang, JS
Huang, YS
Tien, CW
Chang, YM
Chen, CW
Li, NY
Li, PW
Pollak, FH
Citation: Js. Liang et al., Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence, APPL PHYS L, 79(20), 2001, pp. 3227-3229
Authors:
Li, PW
Guang, HC
Li, NY
Citation: Pw. Li et al., Ellipsometric study of the optical properties of InGaAsN layers, JPN J A P 2, 39(9AB), 2000, pp. L898-L900
Authors:
Peake, GM
Zhang, L
Li, NY
Sarangan, AM
Willison, CG
Shul, RJ
Hersee, SD
Citation: Gm. Peake et al., A micromachined, shadow-mask technology for the OMVPE fabrication of integrated optical structures, J ELEC MAT, 29(1), 2000, pp. 86-90
Authors:
Odedra, R
Smith, LM
Rushworth, SA
Ravetz, MS
Clegg, J
Kanjolia, R
Irvine, SJC
Ahmed, MU
Bourret-Courchesne, ED
Li, NY
Cheng, J
Citation: R. Odedra et al., 1,1-dimethylhydrazine as a high purity nitrogen source for MOVPE-water reduction and quantification using nuclear magnetic resonance, gas chromatography-atomic emission detection spectroscopy and cryogenic-mass spectroscopy analytical techniques, J ELEC MAT, 29(1), 2000, pp. 161-164
Authors:
Kathiramalainathan, K
Kaplan, HL
Romach, MK
Busto, UE
Li, NY
Sawe, J
Tyndale, RF
Sellers, EM
Citation: K. Kathiramalainathan et al., Inhibition of cytochrome P450 2D6 modifies codeine abuse liability, J CL PSYCH, 20(4), 2000, pp. 435-444
Authors:
Monier, C
Chang, PC
Li, NY
LaRoche, JR
Baca, AG
Hou, HQ
Ren, F
Pearton, SJ
Citation: C. Monier et al., Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications, SOL ST ELEC, 44(9), 2000, pp. 1515-1521
Authors:
Li, PW
Li, NY
Hou, HQ
Citation: Pw. Li et al., Effects of ex situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors, SOL ST ELEC, 44(7), 2000, pp. 1169-1172
Authors:
Li, NY
Chang, PC
Baca, AG
Xie, XM
Sharps, PR
Hou, HQ
Citation: Ny. Li et al., DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs, ELECTR LETT, 36(1), 2000, pp. 81-83
Authors:
Chang, PC
Baca, AG
Li, NY
Sharps, PR
Hou, HQ
Laroche, JR
Ren, F
Citation: Pc. Chang et al., InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor, APPL PHYS L, 76(19), 2000, pp. 2788-2790
Authors:
Chang, PC
Baca, AG
Li, NY
Xie, XM
Hou, HQ
Armour, E
Citation: Pc. Chang et al., InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor, APPL PHYS L, 76(16), 2000, pp. 2262-2264
Authors:
Peake, GM
Zhang, L
Li, NY
Sarangan, AM
Willison, CG
Shul, RJ
Hersee, SD
Citation: Gm. Peake et al., Micromachined, reusable shadow mask for integrated optical elements grown by metalorganic chemical vapor deposition, J VAC SCI B, 17(5), 1999, pp. 2070-2073
Authors:
Hains, CP
Li, NY
Yang, K
Huang, XD
Cheng, JL
Citation: Cp. Hains et al., Room-temperature pulsed operation of triple-quantum-well GaInNAs lasers grown on misoriented GaAs substrates by MOCVD, IEEE PHOTON, 11(10), 1999, pp. 1208-1210
Authors:
Ghosh, D
Erman, M
Sawicki, M
Lala, P
Weeks, DR
Li, NY
Pangborn, W
Thiel, DJ
Jornvall, H
Gutierrez, R
Eyzaguirre, J
Citation: D. Ghosh et al., Determination of a protein structure by iodination: the structure of iodinated acetylxylan esterase, ACT CRYST D, 55, 1999, pp. 779-784
Authors:
Sawicki, MW
Li, NY
Ghosh, D
Citation: Mw. Sawicki et al., Equilin, ACT CRYST C, 55, 1999, pp. 425-427
Authors:
Tyndale, RF
Li, Y
Li, NY
Messina, E
Miksys, S
Sellers, EM
Citation: Rf. Tyndale et al., Characterization of cytochrome P-450 2D1 activity in rat brain: High-affinity kinetics for dextromethorphan, DRUG META D, 27(8), 1999, pp. 924-930
Authors:
Li, NY
Erman, M
Pangborn, W
Duax, WL
Park, CM
Bruenn, J
Ghosh, D
Citation: Ny. Li et al., Structure of Ustilago maydis killer toxin KP6 alpha-subunit - A multimericassembly with a central pore, J BIOL CHEM, 274(29), 1999, pp. 20425-20431
Authors:
Li, NY
Hains, CP
Yang, K
Lu, J
Cheng, J
Li, PW
Citation: Ny. Li et al., Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 mu m GaInNAs three-quantum-well laser diodes, APPL PHYS L, 75(8), 1999, pp. 1051-1053
Risultati:
1-21
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