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Results:
1-16
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Results: 16
Authors:
Zhang, YF
Zhang, F
Gao, QJ
Peng, XF
Lin, ZD
Citation: Yf. Zhang et al., The roles of argon addition in the hot filament chemical vapor deposition system, DIAM RELAT, 10(8), 2001, pp. 1523-1527
Authors:
Wang, YG
Li, HD
Lin, ZD
Feng, K
Citation: Yg. Wang et al., Growth sector dependence of low frequency Raman peaks observed in boron-doped homoepitaxial diamond particles, JPN J A P 1, 39(5A), 2000, pp. 2795-2796
Authors:
Kang, J
Xiao, CY
Xiong, YY
Wang, YG
Meng, QB
Lin, ZD
Feng, KA
Citation: J. Kang et al., Diamond nucleation and growth under very low-pressure conditions, DIAM RELAT, 9(9-10), 2000, pp. 1691-1695
Authors:
Wang, YG
Li, HD
Xiong, YY
Zhang, SL
Lin, ZD
Feng, K
Citation: Yg. Wang et al., Micro-Raman scattering and photoluminescence study of boron-doped diamond films, DIAM RELAT, 9(9-10), 2000, pp. 1708-1711
Authors:
Shang, NG
Lee, CS
Lin, ZD
Bello, I
Lee, ST
Citation: Ng. Shang et al., Intrinsic stress evolution in diamond films prepared in a CH4-H-2-NH3 hot filament chemical vapor deposition system, DIAM RELAT, 9(7), 2000, pp. 1388-1392
Authors:
Zhang, F
Zhang, YF
Gao, QJ
Zhang, SL
Lin, T
Peng, XF
Lin, ZD
Citation: F. Zhang et al., Synthesis of nano-crystalline diamond films, CHIN PHYS L, 17(5), 2000, pp. 376-378
Authors:
Wang, YG
Gu, CZ
Jin, ZS
Xiong, YY
Lin, ZD
Feng, KA
Citation: Yg. Wang et al., Effect of surface hydrogen coverage on field emission properties of diamond films investigated by high-resolution electron energy loss spectroscopy, CHIN PHYS L, 17(4), 2000, pp. 294-295
Authors:
Lee, CH
Lin, ZD
Shang, NG
Liao, LS
Bello, I
Wang, N
Lee, ST
Citation: Ch. Lee et al., Surface passivation in diamond nucleation, PHYS REV B, 62(24), 2000, pp. 17134-17137
Authors:
Wong, KW
Lee, ST
Lin, ZD
Lam, YW
Kwok, RWM
Citation: Kw. Wong et al., Electron affinity and effect of annealing on heavily boron-doped diamond films, JPN J A P 1, 38(2A), 1999, pp. 791-794
Authors:
Wu, J
Xie, FQ
Zhang, QZ
Liu, JW
Chen, YC
Lin, ZD
Citation: J. Wu et al., Growth model of textured diamond (111) film in CH4/O-2/H-2 atmosphere, ACT PHY C E, 8(12), 1999, pp. 932-937
Authors:
Kang, J
Xiao, CY
Xiong, YY
Feng, KA
Lin, ZD
Citation: J. Kang et al., The effect of atomic of hydrogen in the initial procedure of diamond heteroepitaxy on Si and the interface between diamond and Si, ACT PHY C E, 48(11), 1999, pp. 2104-2109
Authors:
Lee, ST
Lin, ZD
Jiang, X
Citation: St. Lee et al., CVD diamond films: nucleation and growth, MAT SCI E R, 25(4), 1999, pp. 123-154
Authors:
Meng, QB
Fei, YJ
Kang, J
Xiong, YY
Lin, ZD
Feng, KA
Citation: Qb. Meng et al., Study on the interface structure: Diamond thin film epitaxy on (001) silicon substrate, MOD PHY L B, 13(3-4), 1999, pp. 125-129
Authors:
Zhang, HX
Jiang, YB
Meng, QB
Fei, YJ
Zhu, PR
Lin, ZD
Feng, KA
Citation: Hx. Zhang et al., The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films, APPL SURF S, 150(1-4), 1999, pp. 43-46
Authors:
Zhang, HX
Jiang, YB
Yang, SZ
Lin, ZD
Feng, KA
Citation: Hx. Zhang et al., Diamond growth on steel substrates with AL-N interlayer produced by high power plasma streams, THIN SOL FI, 349(1-2), 1999, pp. 162-164
Authors:
Xie, FQ
Zhang, QZ
Lin, ZD
Citation: Fq. Xie et al., Reaction processes at the initial stage of diamond nucleation on the surface of Si(111), CHIN PHYS L, 15(12), 1998, pp. 910-912
Risultati:
1-16
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