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Results: 1-8 |
Results: 8
MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes
Authors: Vinokurov, DA Kapitonov, VA Nikolaev, DN Stankevich, AL Lyutetskii, AV Pikhtin, NA Slipchenko, SO Sokolova, ZN Fetisova, NV Arsent'ev, IN Tarasov, IS
Citation: Da. Vinokurov et al., MOCVD-grown broad area InGaAs/GaAs/InGaP laser diodes, SEMICONDUCT, 35(11), 2001, pp. 1324-1328
Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds
Authors: Golikova, EG Gorbylev, VA Il'in, YV Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Tret'yakova, EA Fetisova, NV
Citation: Eg. Golikova et al., Mesastripe single-mode separately bounded lasers based on InGaAsP/InP heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(4), 2000, pp. 295-297
Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds
Authors: Golikova, EG Gorbylev, VA Davidyuk, NY Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Fetisova, NV
Citation: Eg. Golikova et al., Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(3), 2000, pp. 225-227
The properties of InGaAsP/InP heterolasers with step-divergent waveguides
Authors: Golikova, EG Kureshov, VA Leshko, AY Livshits, DA Lyutetskii, AV Nikolaev, DN Pikhtin, NA Ryaboshtan, YA Slipchenko, SO Tarasov, IS Fetisova, NV
Citation: Eg. Golikova et al., The properties of InGaAsP/InP heterolasers with step-divergent waveguides, TECH PHYS L, 26(10), 2000, pp. 913-915
Properties of wide-mesastripe InGaAsP/InP lasers
Authors: Golikova, EG Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Skrynnikov, GA Tarasov, IS Alferov, ZI
Citation: Eg. Golikova et al., Properties of wide-mesastripe InGaAsP/InP lasers, SEMICONDUCT, 34(7), 2000, pp. 853-856
Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures
Authors: Vavilova, LS Kapitonov, VA Livshits, DA Lyutetskii, AV Murashova, AV Pikhtin, NA Skrynnikov, GV Tarasov, IS
Citation: Ls. Vavilova et al., Photoluminescent and electroluminescent properties of spontaneously forming periodic InGaAsP structures, SEMICONDUCT, 34(3), 2000, pp. 319-322
On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers
Authors: Leshko, AY Lyutetskii, AV Pikhtin, NA Skrynnikov, GV Sokolova, ZN Tarasov, IS Fetisova, NV
Citation: Ay. Leshko et al., On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasers, SEMICONDUCT, 34(12), 2000, pp. 1397-1401
High-power broad-band single-mode InGaAsP/InP superluminescent diode
Authors: Pikhtin, NA Il'in, YV Leshko, AY Lyutetskii, AV Stankevich, AL Tarasov, IS Fetisova, NV
Citation: Na. Pikhtin et al., High-power broad-band single-mode InGaAsP/InP superluminescent diode, TECH PHYS L, 25(8), 1999, pp. 598-600
Risultati: 1-8 |