AAAAAA

   
Results: 1-12 |
Results: 12
CHARGE-CARRIER EXCLUSION AND ACCUMULATION INTENSIFIED BY OHMIC CONTACTS
Authors: MALYUTENKO VK TESLENKO GI VAINBERG VV
Citation: Vk. Malyutenko et al., CHARGE-CARRIER EXCLUSION AND ACCUMULATION INTENSIFIED BY OHMIC CONTACTS, Semiconductors, 32(5), 1998, pp. 568-571
EXCLUSION IN THE SEMICONDUCTOR P(-P-P(+) STRUCTURE UNDER CONDITIONS OF A TEMPERATURE-GRADIENT())
Authors: MALYUTENKO VK SOKOLOV VN VAINBERG VV PIOTROWSKI T PULTORAK J
Citation: Vk. Malyutenko et al., EXCLUSION IN THE SEMICONDUCTOR P(-P-P(+) STRUCTURE UNDER CONDITIONS OF A TEMPERATURE-GRADIENT()), Semiconductor science and technology, 13(1), 1998, pp. 54-58
CHARGE-CARRIER EXCLUSION IN INAS
Authors: BOLGOV SS MALYUTENKO VK SAVCHENKO AP
Citation: Ss. Bolgov et al., CHARGE-CARRIER EXCLUSION IN INAS, Semiconductors, 31(5), 1997, pp. 444-445
RADIATIVE COOLING UNDER THE CONDITIONS OF MAGNETOCONCENTRATION
Authors: LIPTUGA AI MALYUTENKO VK PIPA VI LEVASH LV
Citation: Ai. Liptuga et al., RADIATIVE COOLING UNDER THE CONDITIONS OF MAGNETOCONCENTRATION, Semiconductors, 31(4), 1997, pp. 423-426
CHARACTERIZATION OF OXYGEN IMPURITY CONCENTRATION IN SILICON-BASED ONTHERMAL EMISSION MEASUREMENTS
Authors: MALYUTENKO VK CHERNYAKOVSKY VI PIOTROWSKI T
Citation: Vk. Malyutenko et al., CHARACTERIZATION OF OXYGEN IMPURITY CONCENTRATION IN SILICON-BASED ONTHERMAL EMISSION MEASUREMENTS, Infrared physics & technology, 37(4), 1996, pp. 499-504
HGCDTE AND OTHER INFRARED MATERIAL STATUS IN THE UKRAINE
Authors: MALYUTENKO VK
Citation: Vk. Malyutenko, HGCDTE AND OTHER INFRARED MATERIAL STATUS IN THE UKRAINE, Journal of electronic materials, 24(9), 1995, pp. 1231-1238
CURRENT-VOLTAGE CHARACTERISTICS OF SPHERICAL-GEOMETRY SEMICONDUCTOR STRUCTURES WITH ANTIBLOCKING CONTACTS
Authors: AKOPYAN AA MALYUTENKO VK TESLENKO GI
Citation: Aa. Akopyan et al., CURRENT-VOLTAGE CHARACTERISTICS OF SPHERICAL-GEOMETRY SEMICONDUCTOR STRUCTURES WITH ANTIBLOCKING CONTACTS, Semiconductors, 28(8), 1994, pp. 829-831
ELECTROLUMINESCENCE SPECTRA OF VARIABLE-GAP CDXHG1-XTE CDTE STRUCTURES AT T=300-K
Authors: BOLGOV SS VARDANYAN BR MALYUTENKO VK PIPA VI SAVCHENKO AP YUNOVICH AE
Citation: Ss. Bolgov et al., ELECTROLUMINESCENCE SPECTRA OF VARIABLE-GAP CDXHG1-XTE CDTE STRUCTURES AT T=300-K, Semiconductors, 28(4), 1994, pp. 394-396
LONG-WAVE IR EMISSION IN N-INSB IN STRONG ELECTRIC-FIELDS
Authors: MALYUTENKO VK BULASHENKO OM KOLLYUKH AG MOROZHENKO VA
Citation: Vk. Malyutenko et al., LONG-WAVE IR EMISSION IN N-INSB IN STRONG ELECTRIC-FIELDS, Semiconductors, 28(10), 1994, pp. 955-958
CONTACT EXCLUSION IN A NONUNIFORM ELECTRIC-FIELD - CASE OF A CYLINDRICAL SAMPLE
Authors: AKOPYAN AA VITUSEVICH SA MALYUTENKO VK
Citation: Aa. Akopyan et al., CONTACT EXCLUSION IN A NONUNIFORM ELECTRIC-FIELD - CASE OF A CYLINDRICAL SAMPLE, Semiconductors, 28(1), 1994, pp. 12-18
THERMAL EMISSION OF INAS INDUCED BY BAND TAILS
Authors: MALYUTENKO VK CHERNYAKHOVSKY VI
Citation: Vk. Malyutenko et Vi. Chernyakhovsky, THERMAL EMISSION OF INAS INDUCED BY BAND TAILS, Semiconductor science and technology, 9(5), 1994, pp. 1047-1049
PRESSURE-DEPENDENCE OF THE LUMINESCENCE OF CDXHG1-XTE CDTE HETEROSTRUCTURES/
Authors: BOLGOV SS KISLYI VP MALYUTENKO VK SAVCHENKO AP
Citation: Ss. Bolgov et al., PRESSURE-DEPENDENCE OF THE LUMINESCENCE OF CDXHG1-XTE CDTE HETEROSTRUCTURES/, Semiconductors, 27(1), 1993, pp. 93-95
Risultati: 1-12 |