ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-28

Results: 1-25/28

OPTICALLY DETECTED CARRIER TRANSPORT IN III V SEMICONDUCTOR QW STRUCTURES - EXPERIMENTS, MODEL-CALCULATIONS AND APPLICATIONS IN FAST 1.55 MU-M LASER DEVICES/

Authors: HILLMER H MARCINKEVICIUS S

Citation: H. Hillmer et S. Marcinkevicius, OPTICALLY DETECTED CARRIER TRANSPORT IN III V SEMICONDUCTOR QW STRUCTURES - EXPERIMENTS, MODEL-CALCULATIONS AND APPLICATIONS IN FAST 1.55 MU-M LASER DEVICES/, Applied physics. B, Lasers and optics, 66(1), 1998, pp. 1-17

VERTICAL CARRIER TRANSPORT IN INP-BASED QUANTUM-WELL LASER STRUCTURES

Authors: MARCINKEVICIUS S FROJDH K HILLMER H LOSCH R OLIN U

Citation: S. Marcinkevicius et al., VERTICAL CARRIER TRANSPORT IN INP-BASED QUANTUM-WELL LASER STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 30-33

VERTICAL CARRIER TRANSPORT IN INGAASP MULTIPLE-QUANTUM-WELL LASER STRUCTURES - EFFECT OF P-DOPING

Authors: TESSLER N MARCINKEVICIUS S OLIN U SILFVENIUS CKV STALNACKE BF LANDGREN G

Citation: N. Tessler et al., VERTICAL CARRIER TRANSPORT IN INGAASP MULTIPLE-QUANTUM-WELL LASER STRUCTURES - EFFECT OF P-DOPING, IEEE journal of selected topics in quantum electronics, 3(2), 1997, pp. 315-319

CARRIER DYNAMICS IN INGAAS GAAS QUANTUM DOTS

Authors: MARCINKEVICIUS S LEON R

Citation: S. Marcinkevicius et R. Leon, CARRIER DYNAMICS IN INGAAS GAAS QUANTUM DOTS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 290-292

INTERWELL CARRIER DISTRIBUTION IN INALGAAS QUANTUM-WELL LASER STRUCTURES

Authors: MARCINKEVICIUS S HILLMER H LOSCH R FROJDH K OLIN U

Citation: S. Marcinkevicius et al., INTERWELL CARRIER DISTRIBUTION IN INALGAAS QUANTUM-WELL LASER STRUCTURES, Physica status solidi. b, Basic research, 204(1), 1997, pp. 577-580

STRUCTURAL, ELECTRICAL, AND OPTICAL STUDIES OF GAAS IMPLANTED WITH MEV AS OR GA IONS

Authors: JASINSKI J LILIENTALWEBER Z WASHBURN J TAN HH JAGADISH C KROTKUS A MARCINKEVICIUS S KAMINSKA M

Citation: J. Jasinski et al., STRUCTURAL, ELECTRICAL, AND OPTICAL STUDIES OF GAAS IMPLANTED WITH MEV AS OR GA IONS, Journal of electronic materials, 26(5), 1997, pp. 449-458

NONTHERMAL PHOTOEXCITED ELECTRON DISTRIBUTIONS IN NONSTOICHIOMETRIC GAAS

Authors: MARCINKEVICIUS S KROTKUS A VISELGA R OLIN U JAGADISH C

Citation: S. Marcinkevicius et al., NONTHERMAL PHOTOEXCITED ELECTRON DISTRIBUTIONS IN NONSTOICHIOMETRIC GAAS, Semiconductor science and technology, 12(4), 1997, pp. 396-400

CARRIER TRAPPING DUE TO FE3+ FE2+ IN EPITAXIAL INP/

Authors: SODERSTROM D MARCINKEVICIUS S KARLSSON S LOURDUDOSS S

Citation: D. Soderstrom et al., CARRIER TRAPPING DUE TO FE3+ FE2+ IN EPITAXIAL INP/, Applied physics letters, 70(25), 1997, pp. 3374-3376

ION-IMPLANTED GAAS FOR SUBPICOSECOND OPTOELECTRONIC APPLICATIONS

Authors: TAN HH JAGADISH C KORONA KP JASINSKI J KAMINSKA M VISELGA R MARCINKEVICIUS S KROTKUS A

Citation: Hh. Tan et al., ION-IMPLANTED GAAS FOR SUBPICOSECOND OPTOELECTRONIC APPLICATIONS, IEEE journal of selected topics in quantum electronics, 2(3), 1996, pp. 636-642

TRANSIENT PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE INP-CU

Authors: STALNIONIS A ADOMAVICIUS R KROTKUS A MARCINKEVICIUS S LEON R JAGADISH C

Citation: A. Stalnionis et al., TRANSIENT PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE INP-CU, Acta Physica Polonica. A, 90(5), 1996, pp. 931-934

ULTRAFAST CARRIER TRAPPING AND HIGH-RESISTIVITY OF MEV ENERGY ION-IMPLANTED GAAS

Authors: KORONA KP JASINSKI J KURPIEWSKI A KAMINSKA M JAGADISH C TAN HH KROTKUS A MARCINKEVICIUS S

Citation: Kp. Korona et al., ULTRAFAST CARRIER TRAPPING AND HIGH-RESISTIVITY OF MEV ENERGY ION-IMPLANTED GAAS, Acta Physica Polonica. A, 90(4), 1996, pp. 851-854

PHOTOEXCITED CARRIER DYNAMICS IN INALGAAS INP QUANTUM-WELL LASER STRUCTURES/

Authors: MARCINKEVICIUS S HILLMER H LOSCH R OLIN U

Citation: S. Marcinkevicius et al., PHOTOEXCITED CARRIER DYNAMICS IN INALGAAS INP QUANTUM-WELL LASER STRUCTURES/, Applied physics letters, 69(8), 1996, pp. 1101-1103

INTERWELL CARRIER TRANSPORT IN INGAASP MULTIPLE-QUANTUM-WELL LASER STRUCTURES

Authors: FROJDH K MARCINKEVICIUS S OLIN U SILFVENIUS C STALNACKE B LANDGREN G

Citation: K. Frojdh et al., INTERWELL CARRIER TRANSPORT IN INGAASP MULTIPLE-QUANTUM-WELL LASER STRUCTURES, Applied physics letters, 69(24), 1996, pp. 3695-3697

CARRIER DYNAMICS IN INP WITH METALLIC PRECIPITATES

Authors: MARCINKEVICIUS S KROTKUS A ADOMAVICIUS R LEON R JAGADISH C

Citation: S. Marcinkevicius et al., CARRIER DYNAMICS IN INP WITH METALLIC PRECIPITATES, Applied physics letters, 69(23), 1996, pp. 3554-3556

TIME AND SPATIALLY-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF NONSTOICHIOMETRIC GAAS

Authors: MARCINKEVICIUS S KROTKUS A JASUTIS V BERTULIS K TAN HH JAGADISH C KAMINSKA M

Citation: S. Marcinkevicius et al., TIME AND SPATIALLY-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS OF NONSTOICHIOMETRIC GAAS, Applied physics letters, 68(3), 1996, pp. 397-399

ULTRAFAST CARRIER TRAPPING IN HIGH-ENERGY ION-IMPLANTED GALLIUM-ARSENIDE

Authors: JAGADISH C TAN HH KROTKUS A MARCINKEVICIUS S KORONA KP KAMINSKA M

Citation: C. Jagadish et al., ULTRAFAST CARRIER TRAPPING IN HIGH-ENERGY ION-IMPLANTED GALLIUM-ARSENIDE, Applied physics letters, 68(16), 1996, pp. 2225-2227

PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS (VOL 66, PG 3304, 1995)

Authors: KROTKUS A MARCINKEVICIUS S JASINSKI J KAMINSKA M TAN HH JAGADISH C

Citation: A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS (VOL 66, PG 3304, 1995), Applied physics letters, 68(12), 1996, pp. 1735-1735

FEMTOSECOND ELECTRON RELAXATION IN NONSTOICHIOMETRIC GAAS AND INGAAS

Authors: KROTKUS A MARCINKEVICIUS S JAGADISH C KAMINSKA M

Citation: A. Krotkus et al., FEMTOSECOND ELECTRON RELAXATION IN NONSTOICHIOMETRIC GAAS AND INGAAS, Journal of luminescence, 66-7(1-6), 1995, pp. 455-461

HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES

Authors: JAGADISH C TAN HH JASINSKI J KAMINSKA M PALCZEWSKA M KROTKUS A MARCINKEVICIUS S

Citation: C. Jagadish et al., HIGH-RESISTIVITY AND PICOSECOND CARRIER LIFETIME OF GAAS IMPLANTED WITH MEV GA IONS AT HIGH FLUENCES, Applied physics letters, 67(12), 1995, pp. 1724-1726

PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS

Authors: KROTKUS A MARCINKEVICIUS S JASINSKI J KAMINSKA M TAN HH JAGADISH C

Citation: A. Krotkus et al., PICOSECOND CARRIER LIFETIME IN GAAS IMPLANTED WITH HIGH-DOSES OF AS IONS - AN ALTERNATIVE MATERIAL TO LOW-TEMPERATURE GAAS FOR OPTOELECTRONIC APPLICATIONS, Applied physics letters, 66(24), 1995, pp. 3304-3306

ELECTRON RELAXATION AND CAPTURE IN INGAASP QUANTUM-WELL LASER STRUCTURES

Authors: MARCINKEVICIUS S OLIN U WALLIN J LANDGREN G

Citation: S. Marcinkevicius et al., ELECTRON RELAXATION AND CAPTURE IN INGAASP QUANTUM-WELL LASER STRUCTURES, Applied physics letters, 66(23), 1995, pp. 3164-3166

FEMTOSECOND ELECTRON-TRANSPORT IN QUANTUM-WELL LASER STRUCTURES WITH STEP-GRADED CONFINEMENT LAYERS

Authors: MARCINKEVICIUS S OLIN U WALLIN J STREUBEL K LANDGREN G

Citation: S. Marcinkevicius et al., FEMTOSECOND ELECTRON-TRANSPORT IN QUANTUM-WELL LASER STRUCTURES WITH STEP-GRADED CONFINEMENT LAYERS, Applied physics letters, 66(16), 1995, pp. 2098-2100

SUBPICOSECOND CARRIER LIFETIMES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE

Authors: KROTKUS A VISELGA R BERTULIS K JASUTIS V MARCINKEVICIUS S OLIN U

Citation: A. Krotkus et al., SUBPICOSECOND CARRIER LIFETIMES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE, Applied physics letters, 66(15), 1995, pp. 1939-1941

ULTRAFAST PHOTOLUMINESCENCE DECAY IN LOW-TEMPERATURE MOCVD-GROWN INXGA1-XAS

Authors: KROTKUS A MARCINKEVICIUS S PASISKEVICIUS V OLIN U

Citation: A. Krotkus et al., ULTRAFAST PHOTOLUMINESCENCE DECAY IN LOW-TEMPERATURE MOCVD-GROWN INXGA1-XAS, Semiconductor science and technology, 9(7), 1994, pp. 1382-1386

DIFFERENT CARRIER TEMPERATURES IN THE WELLS AND IN THE BARRIERS OF INGAAS GAAS SINGLE-QUANTUM-WELL STRUCTURES/

Authors: MARCINKEVICIUS S OLIN U

Citation: S. Marcinkevicius et U. Olin, DIFFERENT CARRIER TEMPERATURES IN THE WELLS AND IN THE BARRIERS OF INGAAS GAAS SINGLE-QUANTUM-WELL STRUCTURES/, Semiconductor science and technology, 9(5), 1994, pp. 756-758

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