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Results: 1-25 | 26-30
Results: 1-25/30
VOLTAGE-TUNABLE NEAR-INFRARED PHOTODETECTOR - VERSATILE COMPONENT FOROPTICAL COMMUNICATION-SYSTEMS
Authors: MASINI G COLACE L ASSANTO G PEARSALL TP PRESTING H
Citation: G. Masini et al., VOLTAGE-TUNABLE NEAR-INFRARED PHOTODETECTOR - VERSATILE COMPONENT FOROPTICAL COMMUNICATION-SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2619-2622
THICK PURE GE FILMS FOR PHOTODETECTORS
Authors: SCARINCI F FIORDELISI M CALARCO R LAGOMARSINO S COLACE L MASINI G BARUCCA G COFFA S SPINELLA S
Citation: F. Scarinci et al., THICK PURE GE FILMS FOR PHOTODETECTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1754-1756
AMORPHOUS-SILICON SENSORS FOR OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES BURIED IN SILICON-WAFERS
Authors: DECESARE G MAIELLO G MASINI G BONDARENKO V FERRARI A
Citation: G. Decesare et al., AMORPHOUS-SILICON SENSORS FOR OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES BURIED IN SILICON-WAFERS, Journal of non-crystalline solids, 230, 1998, pp. 1354-1358
16-PIXEL LINEAR-ARRAY OF NEAR-INFRARED PHOTODETECTORS IN POLYCRYSTALLINE GE ON SI
Authors: COLACE L MASINI G GALLUZZI F ASSANTO G
Citation: L. Colace et al., 16-PIXEL LINEAR-ARRAY OF NEAR-INFRARED PHOTODETECTORS IN POLYCRYSTALLINE GE ON SI, Electronics Letters, 34(20), 1998, pp. 1968-1969
METAL-SEMICONDUCTOR-METAL NEAR-INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE SI/
Authors: COLACE L MASINI G GALLUZZI F ASSANTO G CAPELLINI G DIGASPARE L PALANGE E EVANGELISTI F
Citation: L. Colace et al., METAL-SEMICONDUCTOR-METAL NEAR-INFRARED LIGHT DETECTOR BASED ON EPITAXIAL GE SI/, Applied physics letters, 72(24), 1998, pp. 3175-3177
EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING
Authors: GORBACH TY SVECHNIKOV SV SMERTENKO PS TULCHINSKII PG BONDARENKO AV VOLCHEK SA DOROFEEV AM MASINI G MAIELLO G LAMONICA S FERRARI A
Citation: Ty. Gorbach et al., EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING, Semiconductors, 31(12), 1997, pp. 1221-1224
LASER AND NITROGEN PLASMA BEAM-INDUCED MODIFICATIONS IN AMORPHOUS-SILICON THIN-FILMS
Authors: FERRARI A MAIELLO G LAMONICA S DECESARE G DINESCU G DINESCU M ALDEA E CHITICA N MORJAN I GARTNER M MASINI G
Citation: A. Ferrari et al., LASER AND NITROGEN PLASMA BEAM-INDUCED MODIFICATIONS IN AMORPHOUS-SILICON THIN-FILMS, Applied surface science, 110, 1997, pp. 87-92
POROUS SILICON AS LOW-DIMENSIONAL HOST MATERIAL FOR ERBIUM-DOPED STRUCTURES
Authors: BONDARENKO V DOLGYI L DOROFEEV A KAZUCHITS N LESHOK A TROYANOVA G VOROZOV N MAIELLO G MASINI G LAMONICA S FERRARI A
Citation: V. Bondarenko et al., POROUS SILICON AS LOW-DIMENSIONAL HOST MATERIAL FOR ERBIUM-DOPED STRUCTURES, Thin solid films, 297(1-2), 1997, pp. 48-52
VISUAL DETERMINATION OF THICKNESS AND POROSITY OF POROUS SILICON LAYERS
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MAIELLO G LAMONICA S MASINI G PROVERBIO E FERRARI A
Citation: S. Lazarouk et al., VISUAL DETERMINATION OF THICKNESS AND POROSITY OF POROUS SILICON LAYERS, Thin solid films, 297(1-2), 1997, pp. 97-101
PROGRESS IN THE FIELD OF INTEGRATED OPTOELECTRONICS BASED ON POROUS SILICON
Authors: LAMONICA S MAIELLO G FERRARI A MASINI G LAZAROUK S JAGUIRO P KATSOUBA S
Citation: S. Lamonica et al., PROGRESS IN THE FIELD OF INTEGRATED OPTOELECTRONICS BASED ON POROUS SILICON, Thin solid films, 297(1-2), 1997, pp. 265-267
LIGHT GUIDING IN OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES
Authors: MAIELLO G LAMONICA S FERRARI A MASINI G BONDARENKO VP DOROFEEV AM KAZUCHITS NM
Citation: G. Maiello et al., LIGHT GUIDING IN OXIDIZED POROUS SILICON OPTICAL WAVE-GUIDES, Thin solid films, 297(1-2), 1997, pp. 311-313
CAPACITY COUPLED RF DISCHARGE PLASMA-JET TREATMENT OF A-SIC-H STRUCTURES
Authors: FERRARI A MAIELLO G LAMONICA S PROVERBIO E DINESCU G DINESCU M CHITICA N ANDREI A SANDU V GARTNER M MASINI G
Citation: A. Ferrari et al., CAPACITY COUPLED RF DISCHARGE PLASMA-JET TREATMENT OF A-SIC-H STRUCTURES, Thin solid films, 296(1-2), 1997, pp. 23-27
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES (VOL 144, PG 1463, 1997)/, Journal of the Electrochemical Society, 144(5), 1997, pp. 1890-1890
DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/
Authors: CHELYADINSKY AR DOROFEEV AM KAZUCHITS NM LAMONICA S LAZAROUK SK MAIELLO G MASINI G PENINA NM STELMAKH VF BONDARENKO VP FERRARI A
Citation: Ar. Chelyadinsky et al., DEFORMATION OF POROUS SILICON LATTICE CAUSED BY ABSORPTION DESORPTIONPROCESSES/, Journal of the Electrochemical Society, 144(4), 1997, pp. 1463-1468
VOLTAGE TUNABLE SIGE PHOTODETECTOR - A NOVEL TOOL FOR CRYPTED OPTICALCOMMUNICATIONS THROUGH WAVELENGTH MIXING
Authors: MASINI G COLACE L GALLUZZI F ASSANTO G PEARSALL TP PRESTING H
Citation: G. Masini et al., VOLTAGE TUNABLE SIGE PHOTODETECTOR - A NOVEL TOOL FOR CRYPTED OPTICALCOMMUNICATIONS THROUGH WAVELENGTH MIXING, Applied physics letters, 70(24), 1997, pp. 3194-3196
CONDUCTIVITY EFFECTS IN HYDROGENATED AMORPHOUS-SILICON INDUCED BY GAMMA-RAY IRRADIATION
Authors: BACCARO S DECESARE G MAIELLO G MASINI G MONTECCHI M PETTI M FERRARI A
Citation: S. Baccaro et al., CONDUCTIVITY EFFECTS IN HYDROGENATED AMORPHOUS-SILICON INDUCED BY GAMMA-RAY IRRADIATION, Sensors and actuators. B, Chemical, 31(1-2), 1996, pp. 107-109
WHITE-LIGHT EMISSION FROM POROUS-SILICON-ALUMINUM SCHOTTKY JUNCTIONS
Authors: MASINI G LAMONICA S MAIELLO G LAZAROUK S BONDARENKO V
Citation: G. Masini et al., WHITE-LIGHT EMISSION FROM POROUS-SILICON-ALUMINUM SCHOTTKY JUNCTIONS, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 18(10), 1996, pp. 1205-1212
CRYSTALLIZATION OF SILICON-CARBIDE THIN-FILMS BY PULSED-LASER IRRADIATION
Authors: DECESARE G LAMONICA S MAIELLO G MASINI G PROVERBIO E FERRARI A CHITICA N DINESCU M ALEXANDRESCU R MORJAN I ROTIU E
Citation: G. Decesare et al., CRYSTALLIZATION OF SILICON-CARBIDE THIN-FILMS BY PULSED-LASER IRRADIATION, Applied surface science, 106, 1996, pp. 193-197
ACTIVATED PYROLYTIC CARBON TIP PACING LEADS - AN ALTERNATIVE TO STEROID-ELUTING PACING LEADS
Authors: MASINI M LAZZARI M LORENZONI R DOMICELLI AM MICHELETTI A DIANDA R MASINI G
Citation: M. Masini et al., ACTIVATED PYROLYTIC CARBON TIP PACING LEADS - AN ALTERNATIVE TO STEROID-ELUTING PACING LEADS, PACE, 19(11), 1996, pp. 1832-1835
VISIBLE-LIGHT FROM ALUMINUM-POROUS SILICON SCHOTTKY JUNCTIONS
Authors: LAZAROUK S JAGUIRO P KATSOUBA S LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., VISIBLE-LIGHT FROM ALUMINUM-POROUS SILICON SCHOTTKY JUNCTIONS, Thin solid films, 276(1-2), 1996, pp. 168-170
ELECTROLUMINESCENCE FROM ALUMINUM-POROUS SILICON REVERSE-BIASED SCHOTTKY DIODES FORMED ON THE BASE OF HIGHLY DOPED N-TYPE POLYSILICON
Authors: LAZAROUK S BONDARENKO V LAMONICA S MAIELLO G MASINI G PERSHUKEVICH P FERRARI A
Citation: S. Lazarouk et al., ELECTROLUMINESCENCE FROM ALUMINUM-POROUS SILICON REVERSE-BIASED SCHOTTKY DIODES FORMED ON THE BASE OF HIGHLY DOPED N-TYPE POLYSILICON, Thin solid films, 276(1-2), 1996, pp. 296-298
ELECTRICAL CHARACTERIZATION OF VISIBLE EMITTING ELECTROLUMINESCENT SCHOTTKY DIODES BASED ON N-TYPE POROUS SILICON AND ON HIGHLY DOPED N-TYPE POROUS POLYSILICON
Authors: LAZAROUK S BONDARENKO V JAGUIRO P LACQUANITI N LAMONICA S MAIELLO G MASINI G FERRARI A
Citation: S. Lazarouk et al., ELECTRICAL CHARACTERIZATION OF VISIBLE EMITTING ELECTROLUMINESCENT SCHOTTKY DIODES BASED ON N-TYPE POROUS SILICON AND ON HIGHLY DOPED N-TYPE POROUS POLYSILICON, Journal of non-crystalline solids, 200, 1996, pp. 973-976
MODELING AND REALIZATION OF A HIGH-GAIN HOMOJUNCTION A-SI-H BULK BARRIER PHOTOTRANSISTOR
Authors: DECESARE G MASINI G PALMA F
Citation: G. Decesare et al., MODELING AND REALIZATION OF A HIGH-GAIN HOMOJUNCTION A-SI-H BULK BARRIER PHOTOTRANSISTOR, I.E.E.E. transactions on electron devices, 43(7), 1996, pp. 1077-1084
STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(15), 1996, pp. 2108-2110
STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE
Authors: LAZAROUK S JAGUIRO P KATSOUBA S MASINI G LAMONICA S MAIELLO G FERRARI A
Citation: S. Lazarouk et al., STABLE ELECTROLUMINESCENCE FROM REVERSE-BIASED N-TYPE POROUS SILICON-ALUMINUM SCHOTTKY JUNCTION DEVICE, Applied physics letters, 68(12), 1996, pp. 1646-1648
Risultati: 1-25 | 26-30