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Results: 1-25/36
Authors:
ANASHIN VV
MALYSHEV OB
CALDER R
GROBNER O
MATHEWSON A
Citation: Vv. Anashin et al., THE STUDY OF PHOTODESORPTION PROCESS FOR CRYOSORBED CO2, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 405(2-3), 1998, pp. 258-261
Authors:
SHEEHAN E
HURLEY PK
MATHEWSON A
Citation: E. Sheehan et al., HOT-CARRIER DEGRADATION MECHANISMS IN SUBMICRON P-CHANNEL MOSFETS - IMPACT ON LOW-FREQUENCY (L F) NOISE BEHAVIOR/, Microelectronics and reliability, 38(6-8), 1998, pp. 931-936
Authors:
FOLEY S
SCORZONI A
BALBONI R
IMPRONTA M
DEMUNARI I
MATHEWSON A
FANTINI F
Citation: S. Foley et al., A COMPARISON BETWEEN NORMALLY AND HIGHLY ACCELERATED ELECTROMIGRATIONTESTS, Microelectronics and reliability, 38(6-8), 1998, pp. 1021-1027
Authors:
MARTIN A
DUANE R
OSULLIVAN P
MATHEWSON A
Citation: A. Martin et al., DEPENDENCE OF GATE OXIDE BREAKDOWN ON INITIAL CHARGE TRAPPING UNDER FOWLER-NORDHEIM INJECTION, Microelectronics and reliability, 38(6-8), 1998, pp. 1091-1096
Authors:
LEVEUGLE C
HURLEY PK
MATHEWSON A
MORAN S
SHEEHAN E
KALNITSKY A
Citation: C. Leveugle et al., OBSERVATION OF HIGH INTERFACE STATE DENSITIES AT THE SILICON OXIDE INTERFACE FOR LOW DOPED POLYSILICON/OXIDE/SILICON CAPACITOR STRUCTURES/, Microelectronics and reliability, 38(2), 1998, pp. 233-237
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
Citation: A. Martin et al., DIELECTRIC RELIABILITY MEASUREMENT METHODS - A REVIEW, Microelectronics and reliability, 38(1), 1998, pp. 37-72
Authors:
FOLEY S
RYAN A
MARTIN D
MATHEWSON A
Citation: S. Foley et al., A STUDY OF THE INFLUENCE OF INTER-METAL DIELECTRICS ON ELECTROMIGRATION PERFORMANCE, Microelectronics and reliability, 38(1), 1998, pp. 107-113
Authors:
MACSWEENEY D
MCCARTHY KG
MATHEWSON A
MASON B
Citation: D. Macsweeney et al., A SPICE COMPATIBLE SUBCIRCUIT MODEL FOR LATERAL BIPOLAR-TRANSISTORS IN A CMOS PROCESS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1978-1984
Authors:
LOVETT SJ
WELTEN M
MATHEWSON A
MASON B
Citation: Sj. Lovett et al., OPTIMIZING MOS-TRANSISTOR MISMATCH, IEEE journal of solid-state circuits, 33(1), 1998, pp. 147-150
Authors:
EDWARDS MR
MATHEWSON A
Citation: Mr. Edwards et A. Mathewson, THE BALLISTIC PROPERTIES OF TOOL STEEL AS A POTENTIAL IMPROVISED ARMOR PLATE, International journal of impact engineering, 19(4), 1997, pp. 297-309
Authors:
LEVEUGLE C
HURLEY PK
MATHEWSON A
MORAN S
SHEEHAN E
KALNITSKY A
LEPERT A
BEINGLASS I
VENKATESAN M
Citation: C. Leveugle et al., IMPACT OF THE POLYSILICON DOPING LEVEL ON THE PROPERTIES OF THE SILICON OXIDE INTERFACE IN POLYSILICON/OXIDE/SILICON CAPACITOR STRUCTURES/, Microelectronic engineering, 36(1-4), 1997, pp. 215-218
Authors:
FLOYD L
OREILLY M
MATHEWSON A
Citation: L. Floyd et al., DELAY SIMULATION BETWEEN AL SIO2 AND CU/BCB MULTILEVEL INTERCONNECT/, Microelectronic engineering, 33(1-4), 1997, pp. 415-422
Authors:
WESTERBERG L
HJORVARSSON B
WALLEN E
MATHEWSON A
Citation: L. Westerberg et al., HYDROGEN CONTENT AND OUTGASSING OF AIR-BAKED AND VACUUM-FIRED STAINLESS-STEEL, Vacuum, 48(7-9), 1997, pp. 771-773
Authors:
ANASHIN VV
MALYSHEV OB
CALDER R
GROBNER O
MATHEWSON A
Citation: Vv. Anashin et al., PHOTON-INDUCED MOLECULAR DESORPTION FROM CONDENSED GASES, Vacuum, 48(7-9), 1997, pp. 785-788
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
SUEHLE JS
CHAPARALA P
Citation: A. Martin et al., INVESTIGATION OF THE INFLUENCE OF RAMPED VOLTAGE STRESS ON INTRINSIC T(BD) OF MOS GATE OXIDES, Solid-state electronics, 41(7), 1997, pp. 1013-1020
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
Citation: A. Martin et al., STUDY OF UNIPOLAR PULSED RAMP AND COMBINED RAMPED CONSTANT VOLTAGE STRESS ON MOS GATE OXIDES/, Microelectronics and reliability, 37(7), 1997, pp. 1045-1051
Authors:
MINEHANE S
HEALY S
OSULLIVAN P
MCCARTHY K
MATHEWSON A
MASON B
Citation: S. Minehane et al., DIRECT PARAMETER EXTRACTION FOR HOT-CARRIER RELIABILITY SIMULATION, Microelectronics and reliability, 37(10-11), 1997, pp. 1437-1440
Authors:
COUGHLAN J
FOLEY S
MATHEWSON A
Citation: J. Coughlan et al., INVESTIGATIONS OF STRESS DISTRIBUTIONS IN TUNGSTEN-FILLED VIA STRUCTURES USING FINITE-ELEMENT ANALYSIS, Microelectronics and reliability, 37(10-11), 1997, pp. 1549-1552
INVESTIGATION OF RELIABILITY MEASUREMENTS WITH RAMPED AND CONSTANT VOLTAGE STRESS ON MOS GATE OXIDES
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
Citation: A. Martin et al., INVESTIGATION OF RELIABILITY MEASUREMENTS WITH RAMPED AND CONSTANT VOLTAGE STRESS ON MOS GATE OXIDES, Quality and reliability engineering international, 12(4), 1996, pp. 281-286
Authors:
RUDAN M
VECCHI MC
VONSCHWERIN A
SCHOENMAKER W
DEKEERSGIETER A
MCCARTHY K
MATHEWSON A
KLAASSEN DBM
OTTEN JAM
JONES SK
METCALFE JG
Citation: M. Rudan et al., DEVICE MODELING IN THE FRAME OF PROJECT ADEQUAT, Microelectronic engineering, 34(1), 1996, pp. 67-84
Authors:
DUANE R
MARTIN A
ODONOVAN P
HURLEY P
OSULLIVAN P
MATHEWSON A
Citation: R. Duane et al., INVESTIGATION OF TRAPPED CHARGE IN OXIDES UNDER FOWLER-NORDHEIM STRESS USING LOW-BIAS CONDITIONS, Microelectronics and reliability, 36(11-12), 1996, pp. 1623-1626
Authors:
MARTIN A
RIBBROCK T
OSULLIVAN P
MATHEWSON A
Citation: A. Martin et al., ENHANCEMENT OF T(BD) OF MOS GATE OXIDES WITH A SINGLE-STEP PRE-STRESSPRIOR TO A CVS IN THE FOWLER-NORDHEIM REGIME, Microelectronics and reliability, 36(11-12), 1996, pp. 1647-1650
Authors:
HURLEY PK
SHEEHAN E
MORAN S
MATHEWSON A
Citation: Pk. Hurley et al., THE IMPACT OF OXIDE DEGRADATION ON THE LOW-FREQUENCY (1 F) NOISE BEHAVIOR OF P-CHANNEL MOSFET/, Microelectronics and reliability, 36(11-12), 1996, pp. 1679-1682
Authors:
OSULLIVAN P
MATHEWSON A
Citation: P. Osullivan et A. Mathewson, THE 6TH ESPRIT WORKSHOP ON THE CHARACTERIZATION AND GROWTH OF THIN DIELECTRICS IN MICROELECTRONICS, Microelectronics, 27(7), 1996, pp. 597-598
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
Citation: A. Martin et al., CORRELATION OF SIO2 LIFETIMES FROM CONSTANT AND RAMPED VOLTAGE MEASUREMENTS, Microelectronics, 27(7), 1996, pp. 633-645