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Results: 1-25 | 26-50 | 51-55
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EPITAXIAL SILICON GROWN ON CEO2 SI(111) STRUCTURE BY MOLECULAR-BEAM EPITAXY/
Authors: JONES JT CROKE ET GARLAND CM MARSH OJ MCGILL TC
Citation: Jt. Jones et al., EPITAXIAL SILICON GROWN ON CEO2 SI(111) STRUCTURE BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2686-2689
EFFECTS OF INTERFACE ROUGHNESS AND CONDUCTING FILAMENTS IN METAL-OXIDE-SEMICONDUCTOR TUNNEL STRUCTURES
Authors: TING DZY MCGILL TC
Citation: Dzy. Ting et Tc. Mcgill, EFFECTS OF INTERFACE ROUGHNESS AND CONDUCTING FILAMENTS IN METAL-OXIDE-SEMICONDUCTOR TUNNEL STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2182-2187
BALLISTIC-ELECTRON-EMISSION MICROSCOPY SPECTROSCOPY STUDY OF ALSB ANDINAS ALSB SUPERLATTICE BARRIERS/
Authors: CHENG XC MCGILL TC
Citation: Xc. Cheng et Tc. Mcgill, BALLISTIC-ELECTRON-EMISSION MICROSCOPY SPECTROSCOPY STUDY OF ALSB ANDINAS ALSB SUPERLATTICE BARRIERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2291-2295
MODELING LIGHT-EXTRACTION CHARACTERISTICS OF PACKAGED LIGHT-EMITTING-DIODES
Authors: TING DZY MCGILL TC
Citation: Dzy. Ting et Tc. Mcgill, MODELING LIGHT-EXTRACTION CHARACTERISTICS OF PACKAGED LIGHT-EMITTING-DIODES, VLSI design (Print), 6(1-4), 1998, pp. 363-366
EXPERIMENTAL AND THEORETICAL-STUDY OF ULTRA-THIN OXIDES
Authors: DANIEL ES TING DZY MCGILL TC
Citation: Es. Daniel et al., EXPERIMENTAL AND THEORETICAL-STUDY OF ULTRA-THIN OXIDES, Semiconductor science and technology, 13(8A), 1998, pp. 155-159
DEPENDENCE OF THE I-V CURVE OF A METAL-INSULATOR-SEMICONDUCTOR SWITCHON INSULATOR THICKNESS - AN EXPERIMENTAL AND THEORETICAL INVESTIGATION
Authors: PETTERSSON PO ZUR A DANIEL ES LEVY HJ MARSH OJ MCGILL TC
Citation: Po. Pettersson et al., DEPENDENCE OF THE I-V CURVE OF A METAL-INSULATOR-SEMICONDUCTOR SWITCHON INSULATOR THICKNESS - AN EXPERIMENTAL AND THEORETICAL INVESTIGATION, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 286-292
A TRANSISTORLESS-CURRENT-MODE STATIC RAM ARCHITECTURE
Authors: LEVY HJ DANIEL ES MCGILL TC
Citation: Hj. Levy et al., A TRANSISTORLESS-CURRENT-MODE STATIC RAM ARCHITECTURE, IEEE journal of solid-state circuits, 33(4), 1998, pp. 669-672
ELECTRON-DIFFUSION LENGTH AND LIFETIME IN P-TYPE GAN
Authors: BANDIC ZZ BRIDGER PM PIQUETTE EC MCGILL TC
Citation: Zz. Bandic et al., ELECTRON-DIFFUSION LENGTH AND LIFETIME IN P-TYPE GAN, Applied physics letters, 73(22), 1998, pp. 3276-3278
MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME IN GAN
Authors: BANDIC ZZ BRIDGER PM PIQUETTE EC MCGILL TC
Citation: Zz. Bandic et al., MINORITY-CARRIER DIFFUSION LENGTH AND LIFETIME IN GAN, Applied physics letters, 72(24), 1998, pp. 3166-3168
SOLID-PHASE RECRYSTALLIZATION OF ZNS THIN-FILMS ON SAPPHIRE
Authors: BANDIC ZZ PIQUETTE EC MCCALDIN JO MCGILL TC
Citation: Zz. Bandic et al., SOLID-PHASE RECRYSTALLIZATION OF ZNS THIN-FILMS ON SAPPHIRE, Applied physics letters, 72(22), 1998, pp. 2862-2864
MACROSCOPIC AND MICROSCOPIC STUDIES OF ELECTRICAL-PROPERTIES OF VERY THIN SILICON DIOXIDE SUBJECT TO ELECTRICAL STRESS
Authors: DANIEL ES JONES JT MARSH OJ MCGILL TC
Citation: Es. Daniel et al., MACROSCOPIC AND MICROSCOPIC STUDIES OF ELECTRICAL-PROPERTIES OF VERY THIN SILICON DIOXIDE SUBJECT TO ELECTRICAL STRESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1089-1096
GROWTH AND CHARACTERIZATION OF LIGHT-EMITTING ZNS GAN HETEROSTRUCTURES/
Authors: PIQUETTE EC BANDIC ZZ MCCALDIN JO MCGILL TC
Citation: Ec. Piquette et al., GROWTH AND CHARACTERIZATION OF LIGHT-EMITTING ZNS GAN HETEROSTRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1148-1152
MAPPING OF ALXGA1-XAS BAND EDGES BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY
Authors: CHENG XC COLLINS DA MCGILL TC
Citation: Xc. Cheng et al., MAPPING OF ALXGA1-XAS BAND EDGES BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2063-2068
ELECTRONIC-STRUCTURE OF GAN STACKING-FAULTS
Authors: BANDIC ZZ MCGILL TC IKONIC Z
Citation: Zz. Bandic et al., ELECTRONIC-STRUCTURE OF GAN STACKING-FAULTS, Physical review. B, Condensed matter, 56(7), 1997, pp. 3564-3566
MAGNETOTUNNELING IN INTERBAND TUNNEL STRUCTURES
Authors: LIU YX MARQUARDT RR TING DZY MCGILL TC
Citation: Yx. Liu et al., MAGNETOTUNNELING IN INTERBAND TUNNEL STRUCTURES, Physical review. B, Condensed matter, 55(11), 1997, pp. 7073-7077
IMPROVED GROWTH-MORPHOLOGY OF SI-GE-C HETEROSTRUCTURES THROUGH THE USE OF SB SURFACTANT-ASSISTED MOLECULAR-BEAM EPITAXY
Authors: CROKE ET HUNTER AT PETTERSSON PO AHN CC MCGILL TC
Citation: Et. Croke et al., IMPROVED GROWTH-MORPHOLOGY OF SI-GE-C HETEROSTRUCTURES THROUGH THE USE OF SB SURFACTANT-ASSISTED MOLECULAR-BEAM EPITAXY, Thin solid films, 294(1-2), 1997, pp. 105-111
TUNNELING SPECTROSCOPY OF RESONANT INTERBAND TUNNELING STRUCTURES
Authors: ALONZO AC COLLINS DA MCGILL TC
Citation: Ac. Alonzo et al., TUNNELING SPECTROSCOPY OF RESONANT INTERBAND TUNNELING STRUCTURES, Solid state communications, 101(8), 1997, pp. 607-610
PROBING OF INAS ALSB DOUBLE-BARRIER HETEROSTRUCTURES BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY/
Authors: WALACHOVA J ZELINKA J VANIS J CHOW DH SCHULMAN JN KARAMAZOV S CUKR M ZICH P KRAL J MCGILL TC
Citation: J. Walachova et al., PROBING OF INAS ALSB DOUBLE-BARRIER HETEROSTRUCTURES BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY/, Applied physics letters, 70(26), 1997, pp. 3588-3590
INTERFACE ROUGHNESS EFFECTS ON TRANSPORT IN TUNNEL STRUCTURES
Authors: TING DZY MCGILL TC
Citation: Dzy. Ting et Tc. Mcgill, INTERFACE ROUGHNESS EFFECTS ON TRANSPORT IN TUNNEL STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2790-2793
MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE NITROGEN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS HETEROSTRUCTURES - EXPERIMENTS AND KINETIC MODELING/
Authors: BANDIC ZZ MCGILL TC HAUENSTEIN RJ OSTEEN ML
Citation: Zz. Bandic et al., MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE NITROGEN PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS HETEROSTRUCTURES - EXPERIMENTS AND KINETIC MODELING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2948-2951
CHARACTERIZATION OF SI SI1-YCY SUPERLATTICES GROWN BY SURFACTANT ASSISTED MOLECULAR-BEAM EPITAXY/
Authors: PETTERSSON PO AHN CC MCGILL TC CROKE ET HUNTER AT
Citation: Po. Pettersson et al., CHARACTERIZATION OF SI SI1-YCY SUPERLATTICES GROWN BY SURFACTANT ASSISTED MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 3030-3034
EFFICIENT, NUMERICALLY STABLE MULTIBAND K-CENTER-DOT-P TREATMENT OF QUANTUM TRANSPORT IN SEMICONDUCTOR HETEROSTRUCTURES
Authors: LIU YX TING DZY MCGILL TC
Citation: Yx. Liu et al., EFFICIENT, NUMERICALLY STABLE MULTIBAND K-CENTER-DOT-P TREATMENT OF QUANTUM TRANSPORT IN SEMICONDUCTOR HETEROSTRUCTURES, Physical review. B, Condensed matter, 54(8), 1996, pp. 5675-5683
RESONANT MAGNETOTUNNELING SPECTROSCOPY OF P-TYPE-WELL INTERBAND TUNNELING DIODES
Authors: MARQUARDT RR COLLINS DA LIU YX TING DZY MCGILL TC
Citation: Rr. Marquardt et al., RESONANT MAGNETOTUNNELING SPECTROSCOPY OF P-TYPE-WELL INTERBAND TUNNELING DIODES, Physical review. B, Condensed matter, 53(20), 1996, pp. 13624-13630
MODEL-CALCULATIONS FOR N-CDZNS LIGHT EMITTER GROWN ON P-GAN HOLE INJECTOR
Authors: MCCALDIN JO WANG MW MCGILL TC
Citation: Jo. Mccaldin et al., MODEL-CALCULATIONS FOR N-CDZNS LIGHT EMITTER GROWN ON P-GAN HOLE INJECTOR, Journal of crystal growth, 159(1-4), 1996, pp. 502-505
KINETIC MODELING OF MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS-BASED HETEROSTRUCTURES/
Authors: BANDIC ZZ HAUENSTEIN RJ OSTEEN ML MCGILL TC
Citation: Zz. Bandic et al., KINETIC MODELING OF MICROSCOPIC PROCESSES DURING ELECTRON-CYCLOTRON-RESONANCE MICROWAVE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAN GAAS-BASED HETEROSTRUCTURES/, Applied physics letters, 68(11), 1996, pp. 1510-1512
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